JP7286780B2 - 窒化ケイ素の選択的堆積 - Google Patents
窒化ケイ素の選択的堆積 Download PDFInfo
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- JP7286780B2 JP7286780B2 JP2021546688A JP2021546688A JP7286780B2 JP 7286780 B2 JP7286780 B2 JP 7286780B2 JP 2021546688 A JP2021546688 A JP 2021546688A JP 2021546688 A JP2021546688 A JP 2021546688A JP 7286780 B2 JP7286780 B2 JP 7286780B2
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 37
- 230000008021 deposition Effects 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 62
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 51
- 239000000376 reactant Substances 0.000 claims description 36
- 238000000151 deposition Methods 0.000 claims description 28
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 26
- 238000000231 atomic layer deposition Methods 0.000 claims description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 239000002243 precursor Substances 0.000 claims description 19
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 11
- 229910021529 ammonia Inorganic materials 0.000 claims description 10
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 9
- 238000004377 microelectronic Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- JHGCXUUFRJCMON-UHFFFAOYSA-J silicon(4+);tetraiodide Chemical compound [Si+4].[I-].[I-].[I-].[I-] JHGCXUUFRJCMON-UHFFFAOYSA-J 0.000 claims description 8
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- MUQNAPSBHXFMHT-UHFFFAOYSA-N tert-butylhydrazine Chemical compound CC(C)(C)NN MUQNAPSBHXFMHT-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 229940119177 germanium dioxide Drugs 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 239000003708 ampul Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 238000009834 vaporization Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 16
- 239000007789 gas Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000012071 phase Substances 0.000 description 10
- 238000010926 purge Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004480 SiI4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000006557 surface reaction Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 229910017464 nitrogen compound Inorganic materials 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Description
実施例1
この実施例では、SiNは、基板の第3の異なる表面に対して、基板の第1及び第2の表面上に選択的に堆積された。この実施例では、基板の第1の表面は、ALDによって堆積されたAl2O3を含み、基板の第2の表面は、ALD堆積されたZrO2を含み、第3の異なる表面は、(研磨された単結晶ケイ素表面上に環境条件下で成長した)天然酸化ケイ素を含んでいた。
この実施例では、SiNは、基板の第2及び第3の異なる表面に対して、基板の第1の表面上に選択的に堆積された。基板の第1の表面は、天然酸化ケイ素を含んでいた。基板の第2の表面は、ALDによって堆積されたAl2O3を含んでいた。第3の表面は、ALDによって堆積されたZrO2を含んでいた。SiN堆積の前に、基板をNH3プラズマ処理プロセスに供した。
Claims (9)
- 異なる組成の複数の表面を有するマイクロ電子デバイス基板上に窒化ケイ素を選択的に堆積するための方法であって、原子層堆積条件下において、約150℃~約400℃の温度及び約15Torr未満の圧力で、順次パルス化した四ヨウ化ケイ素又は六ヨウ化二ケイ素、及び窒素含有共反応物と前記基板とを接触させることを含み、前記デバイス基板が、少なくとも1つの二酸化ケイ素表面及び少なくとも1つの酸化アルミニウム表面を含み、それによって前記窒化ケイ素が、前記少なくとも1つの酸化アルミニウム表面上に選択的に堆積される、方法。
- 異なる組成の複数の表面を有するマイクロ電子デバイス基板上に窒化ケイ素を選択的に堆積するための方法であって、原子層堆積条件下において、約150℃~約400℃の温度及び約15Torr未満の圧力で、順次パルス化した四ヨウ化ケイ素又は六ヨウ化二ケイ素、及び窒素含有共反応物と前記基板とを接触させることを含み、前記デバイス基板が、少なくとも1つの二酸化ケイ素表面及び少なくとも1つの二酸化ジルコニウム表面を含み、それによって前記窒化ケイ素が、前記少なくとも1つの二酸化ジルコニウム表面に選択的に堆積される、方法。
- 温度が約175℃~約350℃である、請求項1又は2に記載の方法。
- 温度が約200℃~約250℃である、請求項1又は2に記載の方法。
- 前記基板をアンモニアプラズマで前処理するステップをさらに含み、その上に堆積される表面が、二酸化ケイ素、二酸化ゲルマニウム、SiCO、及びlow-k基板から選択される、請求項1又は2に記載の方法。
- 温度が約200℃~約250℃であり、その上に堆積される基板が二酸化ケイ素以外である、請求項1又は2に記載の方法。
- 前記デバイス基板が、窒化ケイ素、窒化チタン、及び窒化アルミニウム、酸化ハフニウム、酸化ジルコニウム、酸化アルミニウム、並びにそれらの組み合わせから選択され、窒化ケイ素の堆積を抑制した二酸化ケイ素基板、二酸化ゲルマニウム基板、SiCO基板、及びlow-k基板から選択される同じ基板上の他の表面と比較して、窒化ケイ素の堆積が強化された、いくつかの表面を含む、請求項1又は2に記載の方法。
- 窒素含有前駆体化合物が、アンモニア、t-ブチルヒドラジン、メチルヒドラジン、又はそれらの混合物から選択される、請求項1又は2に記載の方法。
- Si源がProE-Vapアンプル中で気化のために加熱される、請求項1又は2に記載の方法。
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