JP7279753B2 - シリコンウェーハの洗浄方法および製造方法 - Google Patents

シリコンウェーハの洗浄方法および製造方法 Download PDF

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Publication number
JP7279753B2
JP7279753B2 JP2021142210A JP2021142210A JP7279753B2 JP 7279753 B2 JP7279753 B2 JP 7279753B2 JP 2021142210 A JP2021142210 A JP 2021142210A JP 2021142210 A JP2021142210 A JP 2021142210A JP 7279753 B2 JP7279753 B2 JP 7279753B2
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Japan
Prior art keywords
cleaning
wafer
silicon wafer
etching
oxide film
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Active
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JP2021142210A
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English (en)
Japanese (ja)
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JP2023035388A (ja
Inventor
康太 藤井
達夫 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2021142210A priority Critical patent/JP7279753B2/ja
Priority to PCT/JP2022/027965 priority patent/WO2023032488A1/ja
Priority to KR1020247006492A priority patent/KR20240047383A/ko
Priority to CN202280058117.8A priority patent/CN117941033A/zh
Priority to TW111127471A priority patent/TW202312264A/zh
Publication of JP2023035388A publication Critical patent/JP2023035388A/ja
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Publication of JP7279753B2 publication Critical patent/JP7279753B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2021142210A 2021-09-01 2021-09-01 シリコンウェーハの洗浄方法および製造方法 Active JP7279753B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021142210A JP7279753B2 (ja) 2021-09-01 2021-09-01 シリコンウェーハの洗浄方法および製造方法
PCT/JP2022/027965 WO2023032488A1 (ja) 2021-09-01 2022-07-19 シリコンウェーハの洗浄方法および製造方法
KR1020247006492A KR20240047383A (ko) 2021-09-01 2022-07-19 실리콘 웨이퍼의 세정방법 및 제조방법
CN202280058117.8A CN117941033A (zh) 2021-09-01 2022-07-19 硅晶圆的清洗方法及制造方法
TW111127471A TW202312264A (zh) 2021-09-01 2022-07-22 矽晶圓的清洗方法及製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021142210A JP7279753B2 (ja) 2021-09-01 2021-09-01 シリコンウェーハの洗浄方法および製造方法

Publications (2)

Publication Number Publication Date
JP2023035388A JP2023035388A (ja) 2023-03-13
JP7279753B2 true JP7279753B2 (ja) 2023-05-23

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Application Number Title Priority Date Filing Date
JP2021142210A Active JP7279753B2 (ja) 2021-09-01 2021-09-01 シリコンウェーハの洗浄方法および製造方法

Country Status (5)

Country Link
JP (1) JP7279753B2 (zh)
KR (1) KR20240047383A (zh)
CN (1) CN117941033A (zh)
TW (1) TW202312264A (zh)
WO (1) WO2023032488A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015126067A (ja) 2013-12-26 2015-07-06 信越半導体株式会社 半導体ウェーハの洗浄方法
US20150357180A1 (en) 2014-06-10 2015-12-10 Sunedison Semiconductor Limited (Uen201334164H) Methods for cleaning semiconductor substrates
JP7142435B2 (ja) 2017-12-29 2022-09-27 Ａｉｒｅｖ株式会社 要約装置、要約方法、及び要約プログラム

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766195A (ja) 1993-06-29 1995-03-10 Sumitomo Sitix Corp シリコンウェーハの表面酸化膜形成方法
JP3473063B2 (ja) * 1993-11-15 2003-12-02 松下電器産業株式会社 シリコン基板の洗浄方法
JPH07240394A (ja) 1994-02-28 1995-09-12 Sumitomo Sitix Corp 半導体ウェーハの表面洗浄方法
US5800626A (en) * 1997-02-18 1998-09-01 International Business Machines Corporation Control of gas content in process liquids for improved megasonic cleaning of semiconductor wafers and microelectronics substrates
JP3039483B2 (ja) 1997-10-16 2000-05-08 日本電気株式会社 半導体基板の処理薬液及び半導体基板の薬液処理方法
WO2010118206A2 (en) 2009-04-08 2010-10-14 Sunsonix Process and apparatus for removal of contaminating material from substrates
JP5671793B2 (ja) 2009-10-08 2015-02-18 株式会社Sumco 仕上研磨を施したシリコンウェーハの洗浄方法
JP2012054451A (ja) * 2010-09-02 2012-03-15 Shin Etsu Chem Co Ltd 貼り合わせ基板の製造方法および半導体基板洗浄液

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015126067A (ja) 2013-12-26 2015-07-06 信越半導体株式会社 半導体ウェーハの洗浄方法
US20150357180A1 (en) 2014-06-10 2015-12-10 Sunedison Semiconductor Limited (Uen201334164H) Methods for cleaning semiconductor substrates
JP7142435B2 (ja) 2017-12-29 2022-09-27 Ａｉｒｅｖ株式会社 要約装置、要約方法、及び要約プログラム

Also Published As

Publication number Publication date
JP2023035388A (ja) 2023-03-13
CN117941033A (zh) 2024-04-26
TW202312264A (zh) 2023-03-16
KR20240047383A (ko) 2024-04-12
WO2023032488A1 (ja) 2023-03-09

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