JP7278541B2 - 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 - Google Patents

静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 Download PDF

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JP7278541B2
JP7278541B2 JP2018221716A JP2018221716A JP7278541B2 JP 7278541 B2 JP7278541 B2 JP 7278541B2 JP 2018221716 A JP2018221716 A JP 2018221716A JP 2018221716 A JP2018221716 A JP 2018221716A JP 7278541 B2 JP7278541 B2 JP 7278541B2
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potential difference
electrostatic chuck
substrate
electrode
attracted
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JP2019216230A5 (https=
JP2019216230A (ja
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一史 柏倉
博 石井
映之 細谷
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
JP2018221716A 2018-06-11 2018-11-27 静電チャックシステム、成膜装置、吸着方法、成膜方法及び電子デバイスの製造方法 Active JP7278541B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0066582 2018-06-11
KR1020180066582A KR102427823B1 (ko) 2018-06-11 2018-06-11 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법

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JP2019216230A JP2019216230A (ja) 2019-12-19
JP2019216230A5 JP2019216230A5 (https=) 2022-01-06
JP7278541B2 true JP7278541B2 (ja) 2023-05-22

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JP (1) JP7278541B2 (https=)
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CN (1) CN110578118A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102411995B1 (ko) * 2018-09-21 2022-06-21 캐논 톡키 가부시키가이샤 정전척 시스템, 성막장치, 흡착 및 분리방법, 성막방법 및 전자 디바이스의 제조방법
CN113005398B (zh) * 2019-12-20 2023-04-07 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
KR102501609B1 (ko) * 2019-12-20 2023-02-17 캐논 톡키 가부시키가이샤 성막 장치, 이를 사용한 성막 방법, 및 전자 디바이스의 제조방법
CN113005403B (zh) * 2019-12-20 2023-06-20 佳能特机株式会社 成膜装置、使用其的成膜方法及电子器件的制造方法
KR102788970B1 (ko) * 2019-12-23 2025-03-28 캐논 톡키 가부시키가이샤 성막 장치, 성막 방법, 및 전자 디바이스의 제조방법
KR20210081589A (ko) * 2019-12-24 2021-07-02 캐논 톡키 가부시키가이샤 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법
CN113093416B (zh) * 2021-04-02 2024-04-12 曲面超精密光电(深圳)有限公司 一种超长宽比平面全贴合方法及其设备
CN119411099A (zh) * 2024-11-15 2025-02-11 京东方科技集团股份有限公司 气相沉积设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116849A (ja) 2003-10-09 2005-04-28 Canon Inc 静電吸着装置及び方法、露光装置、デバイスの製造方法
JP2007251083A (ja) 2006-03-20 2007-09-27 Mitsubishi Heavy Ind Ltd ガラス基板の静電吸着装置及びその吸着離脱方法
JP2014065959A (ja) 2012-09-27 2014-04-17 Hitachi High-Technologies Corp 蒸着装置、および、蒸着装置における基板設置方法
JP2016539489A (ja) 2013-09-20 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 集積静電チャックを備えた基板キャリア
JP2017516294A (ja) 2014-05-09 2017-06-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板キャリアシステム及びそれを使用するための方法
JP2017155338A (ja) 2016-03-03 2017-09-07 エルジー ディスプレイ カンパニー リミテッド 有機発光素子の蒸着装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204325A (ja) * 1992-12-28 1994-07-22 Hitachi Ltd 静電吸着装置およびその吸着方法
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP4647122B2 (ja) * 2001-03-19 2011-03-09 株式会社アルバック 真空処理方法
EP1359466A1 (en) * 2002-05-01 2003-11-05 ASML Netherlands B.V. Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method
DE102008037387A1 (de) * 2008-09-24 2010-03-25 Aixtron Ag Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske
JP2011195907A (ja) * 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
US9463543B2 (en) * 2014-06-02 2016-10-11 Applied Materials, Inc. Electromagnetic chuck for OLED mask chucking
KR102235605B1 (ko) * 2014-10-08 2021-04-06 삼성디스플레이 주식회사 증착 장치 및 이를 이용한 증착 방법
CN107429386B (zh) * 2015-04-15 2019-09-27 株式会社爱发科 基板保持机构、成膜装置、及基板的保持方法
KR102586049B1 (ko) * 2015-11-13 2023-10-10 삼성디스플레이 주식회사 마스크 프레임 조립체, 표시 장치의 제조 장치 및 표시 장치의 제조 방법
KR102490641B1 (ko) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 증착 장치 및 증착 방법
CN107851603B (zh) * 2016-06-24 2021-11-23 佳能特机株式会社 基板载置方法、成膜方法、电子设备的制造方法
CN107856041B (zh) * 2016-09-22 2021-04-20 欣兴电子股份有限公司 吸盘装置以及元件转移方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116849A (ja) 2003-10-09 2005-04-28 Canon Inc 静電吸着装置及び方法、露光装置、デバイスの製造方法
JP2007251083A (ja) 2006-03-20 2007-09-27 Mitsubishi Heavy Ind Ltd ガラス基板の静電吸着装置及びその吸着離脱方法
JP2014065959A (ja) 2012-09-27 2014-04-17 Hitachi High-Technologies Corp 蒸着装置、および、蒸着装置における基板設置方法
JP2016539489A (ja) 2013-09-20 2016-12-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 集積静電チャックを備えた基板キャリア
JP2017516294A (ja) 2014-05-09 2017-06-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板キャリアシステム及びそれを使用するための方法
JP2017155338A (ja) 2016-03-03 2017-09-07 エルジー ディスプレイ カンパニー リミテッド 有機発光素子の蒸着装置

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KR102427823B1 (ko) 2022-07-29
CN110578118A (zh) 2019-12-17
KR20190140156A (ko) 2019-12-19
JP2019216230A (ja) 2019-12-19

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