CN110578118A - 静电吸盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法 - Google Patents

静电吸盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法 Download PDF

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Publication number
CN110578118A
CN110578118A CN201811560378.1A CN201811560378A CN110578118A CN 110578118 A CN110578118 A CN 110578118A CN 201811560378 A CN201811560378 A CN 201811560378A CN 110578118 A CN110578118 A CN 110578118A
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CN
China
Prior art keywords
potential difference
electrostatic chuck
substrate
mask
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811560378.1A
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English (en)
Chinese (zh)
Inventor
柏仓一史
石井博
细谷映之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AOI Co Ltd
Canon Tokki Corp
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AOI Co Ltd
Tokki Corp
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Publication of CN110578118A publication Critical patent/CN110578118A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
CN201811560378.1A 2018-06-11 2018-12-20 静电吸盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法 Pending CN110578118A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0066582 2018-06-11
KR1020180066582A KR102427823B1 (ko) 2018-06-11 2018-06-11 정전척 시스템, 성막장치, 흡착방법, 성막방법 및 전자 디바이스의 제조방법

Publications (1)

Publication Number Publication Date
CN110578118A true CN110578118A (zh) 2019-12-17

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Family Applications (1)

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CN201811560378.1A Pending CN110578118A (zh) 2018-06-11 2018-12-20 静电吸盘系统、成膜装置、吸附方法、成膜方法及电子设备的制造方法

Country Status (3)

Country Link
JP (1) JP7278541B2 (https=)
KR (1) KR102427823B1 (https=)
CN (1) CN110578118A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110938805A (zh) * 2018-09-21 2020-03-31 佳能特机株式会社 静电吸盘系统、成膜装置、吸附及分离方法、成膜方法及电子器件的制造方法
CN113005403A (zh) * 2019-12-20 2021-06-22 佳能特机株式会社 成膜装置、使用其的成膜方法及电子器件的制造方法
CN113005398A (zh) * 2019-12-20 2021-06-22 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN113088870A (zh) * 2019-12-23 2021-07-09 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN119411099A (zh) * 2024-11-15 2025-02-11 京东方科技集团股份有限公司 气相沉积设备

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* Cited by examiner, † Cited by third party
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KR102501609B1 (ko) * 2019-12-20 2023-02-17 캐논 톡키 가부시키가이샤 성막 장치, 이를 사용한 성막 방법, 및 전자 디바이스의 제조방법
KR20210081589A (ko) * 2019-12-24 2021-07-02 캐논 톡키 가부시키가이샤 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법
CN113093416B (zh) * 2021-04-02 2024-04-12 曲面超精密光电(深圳)有限公司 一种超长宽比平面全贴合方法及其设备

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CN1365518A (zh) * 1999-05-25 2002-08-21 东陶机器株式会社 静电吸盘和处理装置
CN1456933A (zh) * 2002-05-01 2003-11-19 Asml荷兰有限公司 吸盘，光刻投影设备，制造吸盘的方法和器件制造方法
CN106164331A (zh) * 2013-09-20 2016-11-23 应用材料公司 具有一体式静电夹盘的基板载体
US9713818B2 (en) * 2014-10-08 2017-07-25 Samsung Display Co., Ltd. Deposition apparatus and deposition method using the same
US9847485B2 (en) * 2015-11-13 2017-12-19 Samsung Display Co., Ltd. Mask frame assembly, display manufacturing apparatus including mask frame assembly, and method of manufacturing display apparatus using mask frame assembly
CN107851603A (zh) * 2016-06-24 2018-03-27 佳能特机株式会社 基板载置方法、成膜方法、电子设备的制造方法
CN107856041A (zh) * 2016-09-22 2018-03-30 欣兴电子股份有限公司 吸盘装置以及元件转移方法

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JPH06204325A (ja) * 1992-12-28 1994-07-22 Hitachi Ltd 静電吸着装置およびその吸着方法
JP4647122B2 (ja) * 2001-03-19 2011-03-09 株式会社アルバック 真空処理方法
JP2005116849A (ja) * 2003-10-09 2005-04-28 Canon Inc 静電吸着装置及び方法、露光装置、デバイスの製造方法
JP4884811B2 (ja) * 2006-03-20 2012-02-29 三菱重工業株式会社 ガラス基板の静電吸着装置及びその吸着離脱方法
DE102008037387A1 (de) * 2008-09-24 2010-03-25 Aixtron Ag Verfahren sowie Vorrichtung zum Abscheiden lateral strukturierter Schichten mittels einer magnetisch auf einem Substrathalter gehaltenen Schattenmaske
JP2011195907A (ja) * 2010-03-19 2011-10-06 Tokyo Electron Ltd マスク保持装置及び薄膜形成装置
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CN107429386B (zh) * 2015-04-15 2019-09-27 株式会社爱发科 基板保持机构、成膜装置、及基板的保持方法
KR102490641B1 (ko) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 증착 장치 및 증착 방법
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CN1365518A (zh) * 1999-05-25 2002-08-21 东陶机器株式会社 静电吸盘和处理装置
CN1456933A (zh) * 2002-05-01 2003-11-19 Asml荷兰有限公司 吸盘，光刻投影设备，制造吸盘的方法和器件制造方法
CN106164331A (zh) * 2013-09-20 2016-11-23 应用材料公司 具有一体式静电夹盘的基板载体
US9713818B2 (en) * 2014-10-08 2017-07-25 Samsung Display Co., Ltd. Deposition apparatus and deposition method using the same
US9847485B2 (en) * 2015-11-13 2017-12-19 Samsung Display Co., Ltd. Mask frame assembly, display manufacturing apparatus including mask frame assembly, and method of manufacturing display apparatus using mask frame assembly
CN107851603A (zh) * 2016-06-24 2018-03-27 佳能特机株式会社 基板载置方法、成膜方法、电子设备的制造方法
CN107856041A (zh) * 2016-09-22 2018-03-30 欣兴电子股份有限公司 吸盘装置以及元件转移方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110938805A (zh) * 2018-09-21 2020-03-31 佳能特机株式会社 静电吸盘系统、成膜装置、吸附及分离方法、成膜方法及电子器件的制造方法
CN113005403A (zh) * 2019-12-20 2021-06-22 佳能特机株式会社 成膜装置、使用其的成膜方法及电子器件的制造方法
CN113005398A (zh) * 2019-12-20 2021-06-22 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN113005398B (zh) * 2019-12-20 2023-04-07 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN113005403B (zh) * 2019-12-20 2023-06-20 佳能特机株式会社 成膜装置、使用其的成膜方法及电子器件的制造方法
CN113088870A (zh) * 2019-12-23 2021-07-09 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN113088870B (zh) * 2019-12-23 2023-09-12 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN119411099A (zh) * 2024-11-15 2025-02-11 京东方科技集团股份有限公司 气相沉积设备

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Publication number Publication date
JP7278541B2 (ja) 2023-05-22
KR102427823B1 (ko) 2022-07-29
KR20190140156A (ko) 2019-12-19
JP2019216230A (ja) 2019-12-19

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