JP7278175B2 - 基板処理装置、基板処理装置の製造方法及びメンテナンス方法 - Google Patents

基板処理装置、基板処理装置の製造方法及びメンテナンス方法 Download PDF

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JP7278175B2
JP7278175B2 JP2019153215A JP2019153215A JP7278175B2 JP 7278175 B2 JP7278175 B2 JP 7278175B2 JP 2019153215 A JP2019153215 A JP 2019153215A JP 2019153215 A JP2019153215 A JP 2019153215A JP 7278175 B2 JP7278175 B2 JP 7278175B2
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Japan
Prior art keywords
hole
processing apparatus
substrate processing
pin
bottom plate
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JP2019153215A
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Japanese (ja)
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JP2021034564A (ja
Inventor
毅 伊藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Priority to JP2019153215A priority Critical patent/JP7278175B2/ja
Priority to KR1020200100218A priority patent/KR102411334B1/ko
Priority to CN202010812039.9A priority patent/CN112420472B/zh
Priority to TW109127468A priority patent/TW202123302A/zh
Publication of JP2021034564A publication Critical patent/JP2021034564A/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
JP2019153215A 2019-08-23 2019-08-23 基板処理装置、基板処理装置の製造方法及びメンテナンス方法 Active JP7278175B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019153215A JP7278175B2 (ja) 2019-08-23 2019-08-23 基板処理装置、基板処理装置の製造方法及びメンテナンス方法
KR1020200100218A KR102411334B1 (ko) 2019-08-23 2020-08-11 기판 처리 장치, 기판 처리 장치의 제조 방법 및 메인터넌스 방법
CN202010812039.9A CN112420472B (zh) 2019-08-23 2020-08-13 基片处理装置、基片处理装置的制造方法和维护方法
TW109127468A TW202123302A (zh) 2019-08-23 2020-08-13 基板處理裝置、基板處理裝置之製造方法及維修方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019153215A JP7278175B2 (ja) 2019-08-23 2019-08-23 基板処理装置、基板処理装置の製造方法及びメンテナンス方法

Publications (2)

Publication Number Publication Date
JP2021034564A JP2021034564A (ja) 2021-03-01
JP7278175B2 true JP7278175B2 (ja) 2023-05-19

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JP2019153215A Active JP7278175B2 (ja) 2019-08-23 2019-08-23 基板処理装置、基板処理装置の製造方法及びメンテナンス方法

Country Status (4)

Country Link
JP (1) JP7278175B2 (ko)
KR (1) KR102411334B1 (ko)
CN (1) CN112420472B (ko)
TW (1) TW202123302A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11749542B2 (en) * 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
TWI827971B (zh) * 2021-09-01 2024-01-01 建佳科技股份有限公司 用於半導體製程的烘烤夾具及其應用設備

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246372A (ja) 2001-02-16 2002-08-30 Tokyo Electron Ltd プラズマ装置及びその製造方法
JP2007273685A (ja) 2006-03-31 2007-10-18 Tokyo Electron Ltd 基板載置台および基板処理装置
JP2009182023A (ja) 2008-01-29 2009-08-13 Ulvac Japan Ltd 真空処理装置
WO2013051248A1 (ja) 2011-10-07 2013-04-11 東京エレクトロン株式会社 プラズマ処理装置
JP2014204030A (ja) 2013-04-08 2014-10-27 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにコンピュータに実行させるプログラム
JP2017022295A (ja) 2015-07-14 2017-01-26 株式会社日立ハイテクノロジーズ プラズマ処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164685A (ja) 2000-11-29 2002-06-07 Matsushita Electric Ind Co Ltd 真空処理装置と電磁シールド装置及び傾斜コイルばね
JP2006253312A (ja) * 2005-03-09 2006-09-21 Tokyo Electron Ltd プラズマ処理装置
JP2010177575A (ja) 2009-01-30 2010-08-12 Honko Mfg Co Ltd 電磁波シールド室用電磁波シールド板と積層電磁波シールド板
US9610591B2 (en) 2013-01-25 2017-04-04 Applied Materials, Inc. Showerhead having a detachable gas distribution plate
US9911579B2 (en) * 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
JP2016127185A (ja) * 2015-01-06 2016-07-11 東京エレクトロン株式会社 シールドリングおよび基板載置台
JP6026620B2 (ja) 2015-10-22 2016-11-16 東京エレクトロン株式会社 載置台、プラズマ処理装置及び載置台の製造方法
JP6688715B2 (ja) * 2016-09-29 2020-04-28 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7064895B2 (ja) * 2018-02-05 2022-05-11 株式会社日立ハイテク プラズマ処理装置
JP7002357B2 (ja) * 2018-02-06 2022-01-20 株式会社日立ハイテク プラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246372A (ja) 2001-02-16 2002-08-30 Tokyo Electron Ltd プラズマ装置及びその製造方法
JP2007273685A (ja) 2006-03-31 2007-10-18 Tokyo Electron Ltd 基板載置台および基板処理装置
JP2009182023A (ja) 2008-01-29 2009-08-13 Ulvac Japan Ltd 真空処理装置
WO2013051248A1 (ja) 2011-10-07 2013-04-11 東京エレクトロン株式会社 プラズマ処理装置
JP2014204030A (ja) 2013-04-08 2014-10-27 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにコンピュータに実行させるプログラム
JP2017022295A (ja) 2015-07-14 2017-01-26 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
CN112420472A (zh) 2021-02-26
KR20210023700A (ko) 2021-03-04
TW202123302A (zh) 2021-06-16
KR102411334B1 (ko) 2022-06-22
CN112420472B (zh) 2024-05-31
JP2021034564A (ja) 2021-03-01

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