JP7245230B2 - 半導体装置、および半導体装置の作製方法 - Google Patents

半導体装置、および半導体装置の作製方法 Download PDF

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Publication number
JP7245230B2
JP7245230B2 JP2020510161A JP2020510161A JP7245230B2 JP 7245230 B2 JP7245230 B2 JP 7245230B2 JP 2020510161 A JP2020510161 A JP 2020510161A JP 2020510161 A JP2020510161 A JP 2020510161A JP 7245230 B2 JP7245230 B2 JP 7245230B2
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layer
region
insulating layer
metal oxide
film
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Japanese (ja)
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JPWO2019186315A5 (https=
JPWO2019186315A1 (ja
Inventor
舜平 山崎
健一 岡崎
正美 神長
貴弘 井口
行徳 島
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2023037708A priority Critical patent/JP7462087B2/ja
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Priority to JP2024047811A priority patent/JP7686827B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
JP2020510161A 2018-03-29 2019-03-15 半導体装置、および半導体装置の作製方法 Active JP7245230B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023037708A JP7462087B2 (ja) 2018-03-29 2023-03-10 半導体装置
JP2024047811A JP7686827B2 (ja) 2018-03-29 2024-03-25 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018064931 2018-03-29
JP2018064931 2018-03-29
PCT/IB2019/052105 WO2019186315A1 (ja) 2018-03-29 2019-03-15 半導体装置、および半導体装置の作製方法

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JP2023037708A Division JP7462087B2 (ja) 2018-03-29 2023-03-10 半導体装置

Publications (3)

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JPWO2019186315A1 JPWO2019186315A1 (ja) 2021-04-15
JPWO2019186315A5 JPWO2019186315A5 (https=) 2022-03-08
JP7245230B2 true JP7245230B2 (ja) 2023-03-23

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JP2020510161A Active JP7245230B2 (ja) 2018-03-29 2019-03-15 半導体装置、および半導体装置の作製方法
JP2023037708A Active JP7462087B2 (ja) 2018-03-29 2023-03-10 半導体装置
JP2024047811A Active JP7686827B2 (ja) 2018-03-29 2024-03-25 半導体装置

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JP2023037708A Active JP7462087B2 (ja) 2018-03-29 2023-03-10 半導体装置
JP2024047811A Active JP7686827B2 (ja) 2018-03-29 2024-03-25 半導体装置

Country Status (3)

Country Link
US (2) US11482626B2 (https=)
JP (3) JP7245230B2 (https=)
WO (1) WO2019186315A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11211501B2 (en) * 2019-07-19 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN111584426B (zh) * 2020-05-14 2023-03-28 深圳市华星光电半导体显示技术有限公司 一种显示面板的制备方法、显示面板及显示装置
CN114514573B (zh) * 2021-07-30 2022-08-09 京东方科技集团股份有限公司 像素电路、驱动方法和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080254613A1 (en) 2007-04-10 2008-10-16 Applied Materials, Inc. Methods for forming metal interconnect structure for thin film transistor applications
US20150205194A1 (en) 2014-01-17 2015-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography Mask
JP2015216369A (ja) 2014-04-23 2015-12-03 株式会社半導体エネルギー研究所 撮像装置
WO2017085591A1 (ja) 2015-11-20 2017-05-26 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置、及び該半導体装置を有する電子機器
JP2017112374A (ja) 2015-12-16 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5708910B2 (ja) 2010-03-30 2015-04-30 ソニー株式会社 薄膜トランジスタおよびその製造方法、並びに表示装置
US8936965B2 (en) 2010-11-26 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20130087784A1 (en) * 2011-10-05 2013-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9219164B2 (en) * 2012-04-20 2015-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide semiconductor channel
CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
JP6400336B2 (ja) * 2013-06-05 2018-10-03 株式会社半導体エネルギー研究所 半導体装置
US20150008428A1 (en) 2013-07-08 2015-01-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI702187B (zh) 2014-02-21 2020-08-21 日商半導體能源研究所股份有限公司 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置
CN111048509B (zh) 2014-03-28 2023-12-01 株式会社半导体能源研究所 半导体装置
US9954112B2 (en) * 2015-01-26 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102865410B1 (ko) 2015-02-06 2025-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2017153882A1 (en) 2016-03-11 2017-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device including the semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080254613A1 (en) 2007-04-10 2008-10-16 Applied Materials, Inc. Methods for forming metal interconnect structure for thin film transistor applications
US20150205194A1 (en) 2014-01-17 2015-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography Mask
JP2015216369A (ja) 2014-04-23 2015-12-03 株式会社半導体エネルギー研究所 撮像装置
WO2017085591A1 (ja) 2015-11-20 2017-05-26 株式会社半導体エネルギー研究所 半導体装置、該半導体装置を有する表示装置、及び該半導体装置を有する電子機器
JP2017112374A (ja) 2015-12-16 2017-06-22 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器

Also Published As

Publication number Publication date
JP2023060345A (ja) 2023-04-27
JP2024081709A (ja) 2024-06-18
US20230020210A1 (en) 2023-01-19
US11482626B2 (en) 2022-10-25
US12278292B2 (en) 2025-04-15
WO2019186315A1 (ja) 2019-10-03
JPWO2019186315A1 (ja) 2021-04-15
US20210028313A1 (en) 2021-01-28
JP7462087B2 (ja) 2024-04-04
JP7686827B2 (ja) 2025-06-02

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