JP7244171B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP7244171B2 JP7244171B2 JP2020176925A JP2020176925A JP7244171B2 JP 7244171 B2 JP7244171 B2 JP 7244171B2 JP 2020176925 A JP2020176925 A JP 2020176925A JP 2020176925 A JP2020176925 A JP 2020176925A JP 7244171 B2 JP7244171 B2 JP 7244171B2
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- 239000000758 substrate Substances 0.000 title claims description 145
- 238000012545 processing Methods 0.000 title claims description 113
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 24
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- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 16
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
110 チャンバー部材
111 上部チャンバー
112 下部チャンバー
120 基板支持ユニット
130 薬液吐出ユニット
140 スチーム供給ユニット
141 スチーム生成部材
142 移送部材
143 加熱部材
150 排出部材
260 圧力測定ユニット
261 第1圧力測定部材
262 第2圧力測定部材
370 流体ガイド部材
480 制御部
Claims (19)
- 基板が処理される処理空間を含むチャンバー部材と、
前記処理空間に設置され、基板を支持する基板支持ユニットと、
前記チャンバー部材に連結され、前記基板支持ユニットへ薬液を吐出する薬液吐出ユニットと、
前記チャンバー部材に連結され、前記チャンバー部材へスチームを供給するスチーム供給ユニットと、を含み、
前記スチーム供給ユニットで生成されるスチームは、10bar乃至40barの圧力、及び180度乃至250度の温度を有する、基板処理装置。 - 前記スチーム供給ユニットは、
前記チャンバー部材の外部に位置し、前記処理空間内の温度及び圧力よりも高温及び高圧のスチームを生成するスチーム生成部材と、
前記スチーム生成部材と前記チャンバー部材とを連結し、スチームをチャンバー部材へ移送する移送部材と、を含む、請求項1に記載の基板処理装置。 - 前記スチーム供給ユニットは、
移送部材上に設置され、前記移送部材を加熱する加熱部材をさらに含む、請求項1に記載の基板処理装置。 - 前記チャンバー部材に結合され、前記チャンバー部材に供給されるスチームを排出する排出部材をさらに含む、請求項1に記載の基板処理装置。
- 前記チャンバー部材の処理空間の圧力を測定する圧力測定ユニットをさらに含む、請求項4に記載の基板処理装置。
- 前記圧力測定ユニットは、
前記スチーム供給ユニットからスチームが前記チャンバー部材へ供給される部分に設置され、前記スチームの圧力を測定する第1圧力測定部材と、
前記排出部材からスチームが排出される部分に設置され、前記スチームの圧力を測定する第2圧力測定部材と、を含む、請求項5に記載の基板処理装置。 - 前記圧力測定ユニットは、前記第1圧力測定部材で測定された圧力値と前記第2圧力測定部材で測定された圧力値との平均値を前記チャンバー部材内の圧力として処理する、請求項6に記載の基板処理装置。
- 前記チャンバー部材は、互いに分離される上部チャンバーと下部チャンバーを含む、請求項1に記載の基板処理装置。
- 前記チャンバー部材の処理空間の上側に結合され、スチームから生成された水滴が基板に落下するのを防止する流体ガイド部材をさらに含む、請求項1に記載の基板処理装置。
- 前記流体ガイド部材は、中央部分から遠くなるほど下方傾斜するように構成される、請求項9に記載の基板処理装置。
- 前記流体ガイド部材の下端縁部は、前記基板支持ユニットよりも左右方向に前記チャンバー部材に隣接して位置する、請求項10に記載の基板処理装置。
- 前記流体ガイド部材は疎水性素材からなる、請求項9に記載の基板処理装置。
- 前記排出部材は、前記圧力測定ユニットの測定結果に基づいて、前記処理空間の圧力が一定の範囲に維持されるようにパルス方式で動作する、請求項5に記載の基板処理装置。
- 前記基板支持ユニットに設置され、基板を加熱するための発熱部材をさらに含む、請求項1に記載の基板処理装置。
- 前記発熱部材は発熱コイルまたは光熱源である、請求項14に記載の基板処理装置。
- 基板に形成された窒化ケイ素薄膜をエッチング処理するための基板処理装置であって、
処理空間を提供するチャンバー部材と、
前記処理空間に設置され、基板を回転可能に支持するスピンチャックと、
前記チャンバー部材に連結され、前記スピンチャックへリン酸水溶液を吐出する薬液吐出ユニットと、
前記チャンバー部材に連結され、前記チャンバー部材へスチームを供給するスチーム供給ユニットと、
前記チャンバー部材に結合され、前記チャンバー部材に供給されるスチームを排出する排出部材と、
前記処理空間の圧力を測定する圧力測定ユニットと、
前記排出部材の動作を制御する制御部と、を含み、
前記スチーム供給ユニットで生成されるスチームは、10bar乃至40barの圧力、及び180度乃至250度の温度を有する、基板処理装置。 - 前記制御部は、
前記圧力測定ユニットの測定結果に基づいて、前記処理空間の圧力が基準圧力を超えると判断された場合、前記排出部材を動作させる、請求項16に記載の基板処理装置。 - 前記制御部は、
前記圧力測定ユニットの測定結果に基づいて、前記処理空間の圧力が基準圧力以下であると判断された場合、前記排出部材の動作を停止させる、請求項17に記載の基板処理装置。 - 基板を薬液で処理するための基板処理装置であって、
駆動装置によって互いに離れるか近づく方向に相対移動可能な上部チャンバー及び下部チャンバーを含み、基板の処理空間を提供するチャンバー部材と、
前記処理空間に設置され、基板を回転可能に支持するスピンチャックと、
前記チャンバー部材に連結され、貯蔵タンクに貯蔵された薬液をポンピングして、前記スピンチャック上に支持された基板の上面に吐出するノズルを含む薬液吐出ユニットと、
前記チャンバー部材の外部に位置して前記処理空間内の温度及び圧力よりも高温及び高圧のスチームを生成するスチーム生成部材と、前記スチーム生成部材と前記チャンバー部材とを連結し、前記スチーム生成部材で生成されたスチームをチャンバー部材へ移送するための移送部材とを含むスチーム供給ユニットと、
前記チャンバー部材に結合され、前記チャンバー部材に供給されるスチームを排出する排出部材と、
前記処理空間の上側に設けられ、中央部分から遠ざかるほど下方傾斜するように構成される流体ガイド部材と、を含み、
前記スチーム供給ユニットで生成されるスチームは、10bar乃至40barの圧力、及び180度乃至250度の温度を有する、基板処理装置。
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KR10-2019-0137483 | 2019-10-31 | ||
KR1020190137483A KR102387088B1 (ko) | 2019-10-31 | 2019-10-31 | 기판 처리 장치 |
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JP2021072445A JP2021072445A (ja) | 2021-05-06 |
JP7244171B2 true JP7244171B2 (ja) | 2023-03-22 |
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US (1) | US20210134617A1 (ja) |
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KR (1) | KR102387088B1 (ja) |
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KR20210052766A (ko) | 2021-05-11 |
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US20210134617A1 (en) | 2021-05-06 |
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