JP7242475B2 - 熱処理方法および熱処理装置 - Google Patents
熱処理方法および熱処理装置 Download PDFInfo
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- JP7242475B2 JP7242475B2 JP2019152648A JP2019152648A JP7242475B2 JP 7242475 B2 JP7242475 B2 JP 7242475B2 JP 2019152648 A JP2019152648 A JP 2019152648A JP 2019152648 A JP2019152648 A JP 2019152648A JP 7242475 B2 JP7242475 B2 JP 7242475B2
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- 238000010438 heat treatment Methods 0.000 title claims description 206
- 238000000034 method Methods 0.000 title claims description 35
- 239000011347 resin Substances 0.000 claims description 67
- 229920005989 resin Polymers 0.000 claims description 67
- 229920002488 Hemicellulose Polymers 0.000 claims description 65
- 230000007246 mechanism Effects 0.000 claims description 56
- 239000007789 gas Substances 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 239000012855 volatile organic compound Substances 0.000 claims description 21
- 239000011261 inert gas Substances 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 12
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 230000006837 decompression Effects 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 58
- 235000012431 wafers Nutrition 0.000 description 56
- 238000012545 processing Methods 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 11
- 230000001678 irradiating effect Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000004397 blinking Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012905 input function Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
- Tunnel Furnaces (AREA)
Description
3 制御部
10 チャンバー
15 熱処理空間
18 チャンバー窓
20 ステージ
21 ヒータ
22 冷却配管
30 加熱光源
40 第1ガス供給機構
50 排気機構
52 排気配管
54 検出器
55 リリーフ弁
60 第2ガス供給機構
33 入力部
96 IGBT
103 ヘミセルロース膜
FL フラッシュランプ
W 半導体ウェハー
Claims (16)
- 樹脂膜が形成された基板を加熱する熱処理方法であって、
表面に金属が含浸された樹脂膜が形成された基板をチャンバー内に収容する収容工程と、
前記チャンバー内にて前記樹脂膜を臨界温度よりも高い温度に1秒以下加熱する主加熱工程と、
前記主加熱工程の前に、前記樹脂膜を前記臨界温度以下に加熱する予備加熱工程と、
前記チャンバーからの排気中に含まれる揮発性有機化合物を検出する検出工程と、
を備え、
前記予備加熱工程の実行中に基準値以上の揮発性有機化合物が検出されたときには前記主加熱工程を中止することを特徴とする熱処理方法。 - 樹脂膜が形成された基板を加熱する熱処理方法であって、
表面に金属が含浸された樹脂膜が形成された基板をチャンバー内に収容する収容工程と、
前記チャンバー内にて前記樹脂膜を臨界温度よりも高い温度に1秒以下加熱する主加熱工程と、
を備え、
前記樹脂膜は、ヘミセルロース、フェノール樹脂またはフラーレン誘導体の膜であることを特徴とする熱処理方法。 - 請求項1または請求項2に記載の熱処理方法において、
前記臨界温度は200℃であり、
前記主加熱工程では、前記樹脂膜を500℃以下に加熱することを特徴とする熱処理方法。 - 請求項1から請求項3のいずれかに記載の熱処理方法において、
前記主加熱工程では、フラッシュランプから前記樹脂膜に5J/cm2以上60J/cm2以下の照射エネルギーにてフラッシュ光を照射することを特徴とする熱処理方法。 - 請求項4記載の熱処理方法において、
前記チャンバーの照射窓に沿って不活性ガスを50リットル/分以上150リットル/分以下流すことを特徴とする熱処理方法。 - 請求項1から請求項5のいずれかに記載の熱処理方法において、
前記チャンバー内を減圧する減圧工程をさらに備えることを特徴とする熱処理方法。 - 請求項1から請求項5のいずれかに記載の熱処理方法において、
前記チャンバー内を加圧する加圧工程をさらに備えることを特徴とする熱処理方法。 - 樹脂膜が形成された基板を加熱する熱処理装置であって、
表面に金属が含浸された樹脂膜が形成された基板を収容するチャンバーと、
前記チャンバー内にて前記基板を支持するステージと、
前記チャンバー内にて前記樹脂膜を臨界温度よりも高い温度に1秒以下加熱する主加熱機構と、
前記ステージ内に、前記主加熱機構による加熱の前に前記樹脂膜を前記臨界温度以下に加熱する予備加熱機構と、
前記チャンバーからの排気配管に揮発性有機化合物を検出する検出器と、
を備え、
前記予備加熱機構による加熱を行っているときに前記検出器が基準値以上の揮発性有機化合物を検出したときには前記主加熱機構による加熱を中止することを特徴とする熱処理装置。 - 樹脂膜が形成された基板を加熱する熱処理装置であって、
表面に金属が含浸された樹脂膜が形成された基板を収容するチャンバーと、
前記チャンバー内にて前記基板を支持するステージと、
前記チャンバー内にて前記樹脂膜を臨界温度よりも高い温度に1秒以下加熱する主加熱機構と、
を備え、
前記樹脂膜は、ヘミセルロース、フェノール樹脂またはフラーレン誘導体の膜であることを特徴とする熱処理装置。 - 請求項8記載の熱処理装置において、
前記ステージ内に冷却機構をさらに備えることを特徴とする熱処理装置。 - 請求項8記載の熱処理装置において、
前記チャンバーまたは前記排気配管に安全逃がし弁を備えることを特徴とする熱処理装置。 - 請求項8から請求項11のいずれかに記載の熱処理装置において、
前記臨界温度は200℃であり、
前記主加熱機構は前記樹脂膜を500℃以下に加熱することを特徴とする熱処理装置。 - 請求項8から請求項12のいずれかに記載の熱処理装置において、
前記主加熱機構はフラッシュランプを備え、
前記フラッシュランプから前記樹脂膜に5J/cm2以上60J/cm2以下の照射エネルギーにてフラッシュ光を照射することを特徴とする熱処理装置。 - 請求項13記載の熱処理装置において、
前記チャンバーは、前記フラッシュ光を透過する照射窓を備え、
前記照射窓に沿って不活性ガスを50リットル/分以上150リットル/分以下流すガス供給部をさらに備えることを特徴とする熱処理装置。 - 請求項8から請求項14のいずれかに記載の熱処理装置において、
前記チャンバー内を減圧する減圧機構をさらに備えることを特徴とする熱処理装置。 - 請求項8から請求項14のいずれかに記載の熱処理装置において、
前記チャンバー内を加圧する加圧機構をさらに備えることを特徴とする熱処理装置。
Priority Applications (3)
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JP2019152648A JP7242475B2 (ja) | 2019-08-23 | 2019-08-23 | 熱処理方法および熱処理装置 |
PCT/JP2020/026974 WO2021039148A1 (ja) | 2019-08-23 | 2020-07-10 | 熱処理方法および熱処理装置 |
TW109127305A TWI775127B (zh) | 2019-08-23 | 2020-08-12 | 熱處理方法及熱處理裝置 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005135957A (ja) | 2003-10-28 | 2005-05-26 | Sharp Corp | パターン形成方法およびパターン形成装置 |
WO2006022312A1 (ja) | 2004-08-26 | 2006-03-02 | Fujifilm Corporation | 導電性パターン材料の製造方法 |
JP2013069990A (ja) | 2011-09-26 | 2013-04-18 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
US20190259606A1 (en) | 2018-02-22 | 2019-08-22 | Toshiba Memory Corporation | Pattern-forming method |
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JPH04273430A (ja) * | 1991-02-28 | 1992-09-29 | Tokyo Electron Ltd | 露光装置 |
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- 2020-07-10 WO PCT/JP2020/026974 patent/WO2021039148A1/ja active Application Filing
- 2020-08-12 TW TW109127305A patent/TWI775127B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005135957A (ja) | 2003-10-28 | 2005-05-26 | Sharp Corp | パターン形成方法およびパターン形成装置 |
WO2006022312A1 (ja) | 2004-08-26 | 2006-03-02 | Fujifilm Corporation | 導電性パターン材料の製造方法 |
JP2013069990A (ja) | 2011-09-26 | 2013-04-18 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
US20190259606A1 (en) | 2018-02-22 | 2019-08-22 | Toshiba Memory Corporation | Pattern-forming method |
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WO2021039148A1 (ja) | 2021-03-04 |
TW202113935A (zh) | 2021-04-01 |
TWI775127B (zh) | 2022-08-21 |
JP2021034537A (ja) | 2021-03-01 |
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