JP7218531B2 - 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 - Google Patents
半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 Download PDFInfo
- Publication number
- JP7218531B2 JP7218531B2 JP2018189157A JP2018189157A JP7218531B2 JP 7218531 B2 JP7218531 B2 JP 7218531B2 JP 2018189157 A JP2018189157 A JP 2018189157A JP 2018189157 A JP2018189157 A JP 2018189157A JP 7218531 B2 JP7218531 B2 JP 7218531B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- semiconductor
- semiconductor device
- sio
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
Claims (4)
- ガラス組成として、モル%で、SiO2 35~65%、ZnO 25~50%、SiO2+ZnO 65~90%未満、Al2O3 2~14%、B2O3 0~10%、MgO+CaO 3~15%、MgO 1~15%を含有し、実質的に鉛成分を含有しないことを特徴とする半導体素子被覆用ガラス。
- 請求項1に記載の半導体素子被覆用ガラスからなるガラス粉末を含むことを特徴とする半導体素子被覆用材料。
- 熱処理により結晶が析出する性質を有することを特徴とする請求項2に記載の半導体素子被覆用材料。
- 熱処理により、30~300℃の温度範囲における熱膨張係数が20×10-7/℃以上、且つ48×10-7/℃以下になることを特徴とする請求項3に記載の半導体素子被覆用材料。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018189157A JP7218531B2 (ja) | 2018-10-04 | 2018-10-04 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
PCT/JP2019/036161 WO2020071094A1 (ja) | 2018-10-04 | 2019-09-13 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
CN201980051230.1A CN112512983B (zh) | 2018-10-04 | 2019-09-13 | 半导体元件被覆用玻璃以及使用其的半导体被覆用材料 |
TW108135488A TWI821422B (zh) | 2018-10-04 | 2019-10-01 | 半導體元件被覆用玻璃及使用此的半導體被覆用材料 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018189157A JP7218531B2 (ja) | 2018-10-04 | 2018-10-04 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020055725A JP2020055725A (ja) | 2020-04-09 |
JP7218531B2 true JP7218531B2 (ja) | 2023-02-07 |
Family
ID=70055220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018189157A Active JP7218531B2 (ja) | 2018-10-04 | 2018-10-04 | 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7218531B2 (ja) |
CN (1) | CN112512983B (ja) |
TW (1) | TWI821422B (ja) |
WO (1) | WO2020071094A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114450257A (zh) * | 2019-09-24 | 2022-05-06 | 日本电气硝子株式会社 | 半导体元件包覆用玻璃及使用该玻璃的半导体包覆用材料 |
WO2024004711A1 (ja) * | 2022-06-29 | 2024-01-04 | 日本電気硝子株式会社 | 半導体素子被覆用ガラス、半導体素子被覆用材料、及び半導体素子被覆用焼結体 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013168521A1 (ja) | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | 樹脂封止型半導体装置及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5827643B2 (ja) * | 1979-07-13 | 1983-06-10 | 株式会社日立製作所 | 非直線抵抗体およびその製法 |
US4714687A (en) * | 1986-10-27 | 1987-12-22 | Corning Glass Works | Glass-ceramics suitable for dielectric substrates |
CA2059874A1 (en) * | 1991-02-08 | 1992-08-09 | Michael J. Haun | Partially crystallizable glass compositions |
WO2009119433A1 (ja) * | 2008-03-25 | 2009-10-01 | 日本山村硝子株式会社 | 無鉛ガラス及び無鉛ガラスセラミックス用組成物 |
JP5773327B2 (ja) * | 2010-09-01 | 2015-09-02 | 日本電気硝子株式会社 | 半導体被覆用ガラス |
US9159549B2 (en) * | 2011-05-26 | 2015-10-13 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
EP2849213B1 (en) * | 2012-05-08 | 2017-04-19 | Shindengen Electric Manufacturing Co. Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
EP2983197B1 (en) * | 2013-03-29 | 2018-01-31 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
-
2018
- 2018-10-04 JP JP2018189157A patent/JP7218531B2/ja active Active
-
2019
- 2019-09-13 CN CN201980051230.1A patent/CN112512983B/zh active Active
- 2019-09-13 WO PCT/JP2019/036161 patent/WO2020071094A1/ja active Application Filing
- 2019-10-01 TW TW108135488A patent/TWI821422B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013168521A1 (ja) | 2012-05-08 | 2013-11-14 | 新電元工業株式会社 | 樹脂封止型半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202033467A (zh) | 2020-09-16 |
TWI821422B (zh) | 2023-11-11 |
JP2020055725A (ja) | 2020-04-09 |
WO2020071094A1 (ja) | 2020-04-09 |
CN112512983B (zh) | 2023-03-03 |
CN112512983A (zh) | 2021-03-16 |
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