JP6852961B2 - 半導体素子被覆用ガラス - Google Patents
半導体素子被覆用ガラス Download PDFInfo
- Publication number
- JP6852961B2 JP6852961B2 JP2015111115A JP2015111115A JP6852961B2 JP 6852961 B2 JP6852961 B2 JP 6852961B2 JP 2015111115 A JP2015111115 A JP 2015111115A JP 2015111115 A JP2015111115 A JP 2015111115A JP 6852961 B2 JP6852961 B2 JP 6852961B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- semiconductor element
- coating
- thermal expansion
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
- C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (5)
- ガラス組成として、質量%で、ZnO 63〜68%、B2O3 15〜25%、SiO2 12.5〜25%(ただし12.5%を含まない)、Al2O3 0〜3%(ただし3%を含まない)、及びRO 0〜6%(RはMg、Ca、Sr及びBaから選択される少なくとも1種)を含有し、かつ、アルカリ金属成分、鉛成分を実質的に含有しないことを特徴とする半導体素子被覆用ガラス。
- さらに、質量%で、Ta2O5 0〜5%、MnO2 0〜5%、Nb2O5 0〜5%、及びCeO2 0〜3%を含有することを特徴とする請求項1に記載の半導体素子被覆用ガラス。
- 30〜300℃の温度範囲における熱膨張係数が20〜60×10−7/℃であることを特徴とする請求項1または2に記載の半導体素子被覆用ガラス。
- 請求項1〜3のいずれか一項に記載の半導体素子被覆用ガラスからなることを特徴とする半導体素子被覆用ガラス粉末。
- 請求項4に記載の半導体素子被覆用ガラス粉末100質量部と、ZnO、αZnO・B2O3及び2ZnO・SiO2から選択される少なくとも1種の無機粉末0.01〜5質量部を含有することを特徴とする半導体素子被覆用材料。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015111115A JP6852961B2 (ja) | 2015-06-01 | 2015-06-01 | 半導体素子被覆用ガラス |
CN201680032074.0A CN107635939A (zh) | 2015-06-01 | 2016-05-24 | 半导体元件覆盖用玻璃 |
PCT/JP2016/065244 WO2016194694A1 (ja) | 2015-06-01 | 2016-05-24 | 半導体素子被覆用ガラス |
TW105116911A TWI693202B (zh) | 2015-06-01 | 2016-05-30 | 半導體元件被覆用玻璃 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015111115A JP6852961B2 (ja) | 2015-06-01 | 2015-06-01 | 半導体素子被覆用ガラス |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016222498A JP2016222498A (ja) | 2016-12-28 |
JP6852961B2 true JP6852961B2 (ja) | 2021-03-31 |
Family
ID=57440877
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015111115A Active JP6852961B2 (ja) | 2015-06-01 | 2015-06-01 | 半導体素子被覆用ガラス |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6852961B2 (ja) |
CN (1) | CN107635939A (ja) |
TW (1) | TWI693202B (ja) |
WO (1) | WO2016194694A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110642519B (zh) * | 2019-09-25 | 2022-06-14 | 湖南利德电子浆料股份有限公司 | 一种氮化铝基板用包封浆料及其制备方法和应用 |
DE102020106946A1 (de) | 2020-03-13 | 2021-09-16 | Schott Ag | Glas zur Passivierung von Halbleiterbauelementen |
DE102020008072A1 (de) | 2020-03-13 | 2021-09-30 | Schott Ag | Glas zur Passivierung von Halbleiterbauelementen |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5117027B1 (ja) * | 1970-06-15 | 1976-05-29 | ||
JPS5137149B2 (ja) * | 1971-10-04 | 1976-10-14 | ||
JPS547557B2 (ja) * | 1974-03-30 | 1979-04-07 | ||
JPS61242928A (ja) * | 1985-04-17 | 1986-10-29 | Nippon Electric Glass Co Ltd | 半導体被覆用ガラス |
WO2011093177A1 (ja) * | 2010-01-28 | 2011-08-04 | 日本電気硝子株式会社 | 半導体被覆用ガラスおよびそれを用いてなる半導体被覆用材料 |
US9236318B1 (en) * | 2013-03-29 | 2016-01-12 | Shindengen Electric Manufacturing Co., Ltd. | Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device |
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2015
- 2015-06-01 JP JP2015111115A patent/JP6852961B2/ja active Active
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2016
- 2016-05-24 CN CN201680032074.0A patent/CN107635939A/zh active Pending
- 2016-05-24 WO PCT/JP2016/065244 patent/WO2016194694A1/ja active Application Filing
- 2016-05-30 TW TW105116911A patent/TWI693202B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2016222498A (ja) | 2016-12-28 |
TWI693202B (zh) | 2020-05-11 |
CN107635939A (zh) | 2018-01-26 |
TW201704165A (zh) | 2017-02-01 |
WO2016194694A1 (ja) | 2016-12-08 |
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