JP7212061B2 - 平坦な接合面を有するledバックプレーンおよびその製造方法 - Google Patents

平坦な接合面を有するledバックプレーンおよびその製造方法 Download PDF

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JP7212061B2
JP7212061B2 JP2020555026A JP2020555026A JP7212061B2 JP 7212061 B2 JP7212061 B2 JP 7212061B2 JP 2020555026 A JP2020555026 A JP 2020555026A JP 2020555026 A JP2020555026 A JP 2020555026A JP 7212061 B2 JP7212061 B2 JP 7212061B2
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light emitting
emitting device
backplane
dimensional array
metal plate
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JP2021521634A (ja
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ファリバ ダネシュ,
ティモシー ガラガー,
アヌシャ ポクリヤル,
ツン ラウ,
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Nanosys Inc
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    • HELECTRICITY
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    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01Manufacture or treatment
    • H10H29/036Manufacture or treatment of packages
    • H10H29/0364Manufacture or treatment of packages of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
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    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
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    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
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    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30Active-matrix LED displays
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    • H10H20/80Constructional details
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    • H10H20/811Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82Roughened surfaces, e.g. at the interface between epitaxial layers
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    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
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    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10H29/01Manufacture or treatment
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    • H10H29/01Manufacture or treatment
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    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30Active-matrix LED displays
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    • H10H29/30Active-matrix LED displays
    • H10H29/41Insulating layers formed between the driving transistors and the LEDs
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
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    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07334Using a reflow oven
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    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07335Applying EM radiation, e.g. induction heating or using a laser
    • HELECTRICITY
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    • H10W72/00Interconnections or connectors in packages
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    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07336Soldering or alloying

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JP2020555026A 2018-04-10 2019-04-03 平坦な接合面を有するledバックプレーンおよびその製造方法 Active JP7212061B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/949,514 2018-04-10
US15/949,514 US10707190B2 (en) 2018-04-10 2018-04-10 LED backplane having planar bonding surfaces and method of making thereof
PCT/US2019/025622 WO2019199547A1 (en) 2018-04-10 2019-04-03 Led backplane having planar bonding surfaces and method of making thereof

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JP2021521634A JP2021521634A (ja) 2021-08-26
JP2021521634A5 JP2021521634A5 (https=) 2022-03-02
JP7212061B2 true JP7212061B2 (ja) 2023-01-24

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US (1) US10707190B2 (https=)
EP (1) EP3776655A4 (https=)
JP (1) JP7212061B2 (https=)
KR (1) KR102480160B1 (https=)
TW (1) TWI797305B (https=)
WO (1) WO2019199547A1 (https=)

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TWI647835B (zh) * 2017-07-05 2019-01-11 英屬開曼群島商錼創科技股份有限公司 顯示面板
US11011669B2 (en) * 2019-10-14 2021-05-18 Shaoher Pan Integrated active-matrix light emitting pixel arrays based devices
JP7585109B2 (ja) 2021-03-17 2024-11-18 株式会社ジャパンディスプレイ 表示装置及びその製造方法
TWI844832B (zh) * 2022-03-17 2024-06-11 晶元光電股份有限公司 半導體元件及半導體組件
TWI905744B (zh) * 2022-03-17 2025-11-21 晶元光電股份有限公司 半導體裝置的製造方法及半導體晶圓結構
TWI902449B (zh) * 2024-09-13 2025-10-21 晶呈科技股份有限公司 垂直覆晶式發光元件及垂直覆晶式發光元件製作方法

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US10707190B2 (en) 2020-07-07
EP3776655A1 (en) 2021-02-17
KR102480160B1 (ko) 2022-12-22
KR20200131910A (ko) 2020-11-24
JP2021521634A (ja) 2021-08-26
US20190312015A1 (en) 2019-10-10
TW201944145A (zh) 2019-11-16
EP3776655A4 (en) 2022-01-05
WO2019199547A1 (en) 2019-10-17
TWI797305B (zh) 2023-04-01

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