KR102480160B1 - 평면 접합면들을 갖는 led 백플레인 및 그 제조 방법 - Google Patents

평면 접합면들을 갖는 led 백플레인 및 그 제조 방법 Download PDF

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KR102480160B1
KR102480160B1 KR1020207032345A KR20207032345A KR102480160B1 KR 102480160 B1 KR102480160 B1 KR 102480160B1 KR 1020207032345 A KR1020207032345 A KR 1020207032345A KR 20207032345 A KR20207032345 A KR 20207032345A KR 102480160 B1 KR102480160 B1 KR 102480160B1
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light emitting
backplane
metal plate
metal
dimensional array
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KR20200131910A (ko
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파리바 대네쉬
티모시 갤러거
애뉴샤 포크리얄
춘 라우
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글로 에이비
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    • H—ELECTRICITY
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    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
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    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
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    • H10H20/80—Constructional details
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    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
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    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
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    • H10H20/01—Manufacture or treatment
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    • H10H20/80—Constructional details
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    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
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    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
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    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10H29/01—Manufacture or treatment
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    • H10H29/01—Manufacture or treatment
    • H10H29/02—Manufacture or treatment using pick-and-place processes
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    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
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    • H10H29/39—Connection of the pixel electrodes to the driving transistors
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    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/41—Insulating layers formed between the driving transistors and the LEDs
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07334—Using a reflow oven
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07335—Applying EM radiation, e.g. induction heating or using a laser
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying

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  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Wire Bonding (AREA)
KR1020207032345A 2018-04-10 2019-04-03 평면 접합면들을 갖는 led 백플레인 및 그 제조 방법 Active KR102480160B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/949,514 2018-04-10
US15/949,514 US10707190B2 (en) 2018-04-10 2018-04-10 LED backplane having planar bonding surfaces and method of making thereof
PCT/US2019/025622 WO2019199547A1 (en) 2018-04-10 2019-04-03 Led backplane having planar bonding surfaces and method of making thereof

Publications (2)

Publication Number Publication Date
KR20200131910A KR20200131910A (ko) 2020-11-24
KR102480160B1 true KR102480160B1 (ko) 2022-12-22

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US (1) US10707190B2 (https=)
EP (1) EP3776655A4 (https=)
JP (1) JP7212061B2 (https=)
KR (1) KR102480160B1 (https=)
TW (1) TWI797305B (https=)
WO (1) WO2019199547A1 (https=)

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TWI647835B (zh) * 2017-07-05 2019-01-11 英屬開曼群島商錼創科技股份有限公司 顯示面板
US11011669B2 (en) * 2019-10-14 2021-05-18 Shaoher Pan Integrated active-matrix light emitting pixel arrays based devices
JP7585109B2 (ja) 2021-03-17 2024-11-18 株式会社ジャパンディスプレイ 表示装置及びその製造方法
TWI844832B (zh) * 2022-03-17 2024-06-11 晶元光電股份有限公司 半導體元件及半導體組件
TWI905744B (zh) * 2022-03-17 2025-11-21 晶元光電股份有限公司 半導體裝置的製造方法及半導體晶圓結構
TWI902449B (zh) * 2024-09-13 2025-10-21 晶呈科技股份有限公司 垂直覆晶式發光元件及垂直覆晶式發光元件製作方法

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JP7212061B2 (ja) 2023-01-24
US10707190B2 (en) 2020-07-07
EP3776655A1 (en) 2021-02-17
KR20200131910A (ko) 2020-11-24
JP2021521634A (ja) 2021-08-26
US20190312015A1 (en) 2019-10-10
TW201944145A (zh) 2019-11-16
EP3776655A4 (en) 2022-01-05
WO2019199547A1 (en) 2019-10-17
TWI797305B (zh) 2023-04-01

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