TW202316402A - 顯示面板 - Google Patents

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Publication number
TW202316402A
TW202316402A TW110137797A TW110137797A TW202316402A TW 202316402 A TW202316402 A TW 202316402A TW 110137797 A TW110137797 A TW 110137797A TW 110137797 A TW110137797 A TW 110137797A TW 202316402 A TW202316402 A TW 202316402A
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Taiwan
Prior art keywords
emitting element
vertical light
display panel
light emitting
light
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TW110137797A
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English (en)
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TWI800945B (zh
Inventor
吳仰恩
林世雄
蘇振嘉
李俊雨
Original Assignee
友達光電股份有限公司
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Application filed by 友達光電股份有限公司 filed Critical 友達光電股份有限公司
Priority to TW110137797A priority Critical patent/TWI800945B/zh
Priority to US17/701,683 priority patent/US20230112531A1/en
Priority to CN202210350437.2A priority patent/CN114613801A/zh
Publication of TW202316402A publication Critical patent/TW202316402A/zh
Application granted granted Critical
Publication of TWI800945B publication Critical patent/TWI800945B/zh

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    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Abstract

一種顯示面板包括畫素陣列基板、多個垂直式發光元件以及覆晶式發光元件。畫素陣列基板具有第一畫素區與第二畫素區。這些垂直式發光元件設置在第一畫素區與第二畫素區內，並且電性連接畫素陣列基板。覆晶式發光元件設置在第二畫素區內，並且電性連接畫素陣列基板。覆晶式發光元件的發光顏色與這些垂直式發光元件位於第一畫素區的其中一者的發光顏色相同。

Description

顯示面板
本發明是有關於一種顯示面板，且特別是有關於一種具有發光元件的顯示面板。
近年來，在有機發光二極體（Organic light-emitting diode，OLED）顯示面板的製造成本偏高及其使用壽命無法與現行的主流顯示器相抗衡的情況下，微型發光二極體顯示器（Micro LED Display）逐漸吸引各科技大廠的投資目光。微型發光二極體顯示器具有與有機發光二極體顯示技術相當的光學表現，例如高色彩飽和度、應答速度快及高對比，且具有低耗能及材料使用壽命長的優勢。
基於成本與顯示品質的考量，一種採用垂直式微型發光二極體作為發光元件的顯示技術被提出。此類發光元件的一側電極在接合至電路背板後，需進行額外的微影蝕刻製程來形成導電線路，使另一側電極能經由此導電線路與電路背板電性連接。然而，上述的連接關係會增加修補製程的難度。
本發明提供一種具有垂直式發光元件的顯示面板，其修補製程的重工性較佳，且修補良率也較高。
本發明的顯示面板，包括畫素陣列基板、多個垂直式發光元件以及覆晶式發光元件。畫素陣列基板具有第一畫素區與第二畫素區。這些垂直式發光元件設置在第一畫素區與第二畫素區內，並且電性連接畫素陣列基板。覆晶式發光元件設置在第二畫素區內，並且電性連接畫素陣列基板。覆晶式發光元件的發光顏色與這些垂直式發光元件位於第一畫素區的其中一者的發光顏色相同。
本發明的顯示面板，包括畫素陣列基板、垂直式發光元件以及覆晶式發光元件。畫素陣列基板具有多個畫素區以及設置在各個畫素區內的第一接墊、第一修補接墊和第二修補接墊。第一接墊電性連接第一修補接墊。垂直式發光元件電性接合於這些畫素區的其中一者內的第一接墊。覆晶式發光元件電性接合於這些畫素區的其中該者內的第一修補接墊和第二修補接墊。覆晶式發光元件的發光顏色與垂直式發光元件的發光顏色相同。
基於上述，在本發明的一實施例的顯示面板中，位於第一畫素區內的多個垂直式發光元件用於顯示至少兩種顏色，而位於第二畫素區內的多個垂直式發光元件和覆晶式發光元件也用於顯示這至少兩種顏色。透過覆晶式發光元件來取代同一畫素區內發光顏色相同且驅動異常的垂直式發光元件，可有效降低修補製程的複雜度，並提升發光元件的修補良率。
本文使用的「約」、「近似」、「本質上」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值，考慮到所討論的測量和與測量相關的誤差的特定數量（即，測量系統的限制）。例如，「約」可以表示在所述值的一個或多個標準偏差內，或例如±30%、±20%、±15%、±10%、±5%內。再者，本文使用的「約」、「近似」、「本質上」、或「實質上」可依量測性質、切割性質或其它性質，來選擇較可接受的偏差範圍或標準偏差，而可不用一個標準偏差適用全部性質。
在附圖中，為了清楚起見，放大了層、膜、面板、區域等的厚度。應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。相反，當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時，不存在中間元件。如本文所使用的，「連接」可以指物理及/或電性連接。再者，「電性連接」可為二元件間存在其它元件。
現將詳細地參考本發明的示範性實施方式，示範性實施方式的實例說明於所附圖式中。只要有可能，相同元件符號在圖式和描述中用來表示相同或相似部分。
圖1是依照本發明的第一實施例的顯示面板的正視示意圖。圖2是圖1的顯示面板的剖視示意圖。圖3是圖2的焊料圖案的剖視示意圖。圖2對應圖1的剖線A-A’。圖4A至圖4H是圖1的顯示面板的製造流程的剖視示意圖。圖5A及圖5B是圖1的顯示面板的修補製程的剖視示意圖。圖6是依照本發明的第二實施例的顯示面板的正視示意圖。為清楚呈現起見，圖1省略了圖2中平坦層PL的繪示。
請參照圖1及圖2，顯示面板10包括畫素陣列基板100和多個垂直式發光元件VLED。畫素陣列基板100具有多個畫素區PA，且這些垂直式發光元件VLED設置在這些畫素區PA內。在本實施例中，每一畫素區PA內可設有三個垂直式發光元件VLED，分別為第一垂直式發光元件VLED1、第二垂直式發光元件VLED2和第三垂直式發光元件VLED3，且這三個垂直式發光元件VLED的發光顏色彼此不同。例如：第一垂直式發光元件VLED1、第二垂直式發光元件VLED2和第三垂直式發光元件VLED3分別用於發出紅光、綠光和藍光。然而，本發明不限於此。在其他實施例中，每一畫素區PA內所預設的發光元件數量和發光顏色數量當可根據實際的光學設計或應用需求而調整。
在本實施例中，每一畫素區PA都設有三個第一接墊P1和三個第二接墊P2。第一垂直式發光元件VLED1、第二垂直式發光元件VLED2和第三垂直式發光元件VLED3各自接合至對應的接墊組PP（即第一接墊P1和第二接墊P2的組合）以電性連接畫素陣列基板100，但不以此為限。在其他實施例中，顯示面板也可以共電極層來取代前述的多個第二接墊P2。
舉例來說，垂直式發光元件VLED可包括磊晶結構層110、透光電極層120和絕緣層130。磊晶結構層110例如是緩衝層111、第一型半導體層112、發光層113和第二型半導體層114的多層堆疊結構。緩衝層111、第一型半導體層112、發光層113和第二型半導體層114分別是非摻雜氮化鎵層、N型氮化鎵層、多重量子井（multiple quantum well，MQW）層和P型氮化鎵層，但不以此為限。
透光電極層120設置在磊晶結構層110的第二型半導體層114的一側，並且電性連接第二型半導體層114。透光電極層120的材料例如包括：銦錫氧化物（indium-tin oxide，ITO）、銦鋅氧化物（indium-zinc oxide，IZO）、或其他合適的透光金屬氧化物。絕緣層130覆蓋且圍繞磊晶結構層110和透光電極層120的側壁，但不以此為限。在其他實施例中，絕緣層還可進一步覆蓋透光電極層120背離磊晶結構層110的表面。
在本實施例中，垂直式發光元件VLED設有緩衝層111的一側可經由焊料圖案SB與畫素陣列基板100電性接合，而設有透光電極層120的另一側可經由導電線路CL與畫素陣列基板100電性連接。請同時參照圖3，舉例來說，焊料圖案SB為依序設置在垂直式發光元件VLED上的第一金屬層ML1、第二金屬層ML2、第三金屬層ML3和第四金屬層ML4的堆疊結構。亦即，第一金屬層ML1接觸垂直式發光元件VLED，而第四金屬層ML4接觸第一接墊P1。特別說明的是，較靠近第一接墊P1的第四金屬層ML4，其熔點低於攝氏260度。也就是說，第四金屬層ML4是由低溫焊料所形成。因此，垂直式發光元件VLED與畫素陣列基板100的接合可在較低的製程溫度中進行。
另一方面，顯示面板10還可包括平坦層PL，覆蓋畫素陣列基板100與各個垂直式發光元件VLED的側壁，並且暴露出前述的多個第二接墊P2和垂直式發光元件VLED的透光電極層120。導電線路CL沿著方向Z重疊於第二接墊P2和垂直式發光元件VLED。更具體地說，覆蓋透光電極層120的導電線路CL延伸於平坦層PL上，並且伸入平坦層PL的開口PLa以電性連接對應的第二接墊P2。
然而，本發明不限於此。在其他實施例中，平坦層也可僅設置在垂直式發光元件VLED的側壁周圍，以提供導電線路CL走線用。換言之，平坦層是以彼此分離的多個島狀結構覆蓋這些垂直式發光元件VLED的側壁。此外，在一些實施例中，平坦層的材質還可選用具有高反射率的材料，以增加發光元件的出光效率。
為了增加顯示面板10的生產良率，顯示面板10的畫素區PA設有多個修補接墊組RPP，且平坦層PL還具有暴露出這些修補接墊組RPP的開口PLb。在本實施例中，每一個畫素區PA所設置的修補接墊組RPP數量是以三個為例進行示範性地說明，且這三個修補接墊組RPP分別對應三個接墊組PP設置。也就是說，各畫素區PA內的每一個垂直式發光元件VLED都配置有一個修補接墊組RPP。
舉例來說，顯示面板10的多個畫素區PA的多個接墊組PP分別沿著方向X和方向Y排成多列和多行。亦即，用於接合垂直式發光元件VLED的接墊組PP是以陣列的方式排列於畫素陣列基板100上。對應地，多個畫素區PA的多個修補接墊組RPP分別沿著方向X和方向Y排成多列和多行，且修補接墊組RPP與接墊組PP沿著方向Y交替排列。換句話說，每一個垂直式發光元件VLED沿著方向Y的一側都預留有一組修補接合墊RPP。
然而，本發明不限於此。在其他實施例中，各畫素區PA內所配置的接墊組PP數量也可不同於修補接墊組RPP的數量。亦即，各畫素區PA內的垂直式發光元件VLED數量與修補接墊組RPP數量的配置可以是多對一或一對多的關係。另一方面，各畫素區PA內的修補接墊組RPP和接墊組PP的排列方式也可根據實際的產品設計而調整，本發明並不以圖式揭示內容而加以限制。
特別注意的是，在本實施例中，修補用的發光元件類型不同於主發光元件類型（即垂直式發光元件VLED）。顯示面板10的修補接墊組RPP適於接合覆晶式發光元件FLED。詳細而言，修補接墊組RPP為第一修補接墊RP1和第二修補接墊RP2的組合，第一修補接墊RP1和第二修補接墊RP2分別電性連接欲修補的垂直式發光元件VLED的第一接墊P1和第二接墊P2。
在本實施例中，顯示面板10的部分畫素區PA被檢測出顯示異常的垂直式發光元件VLED。舉例來說，不同於正常的畫素區PA1，畫素區PA2和畫素區PA3分別被檢測出驅動異常的垂直式發光元件VLED2x和垂直式發光元件VLED3x。因此，這些異常的垂直式發光元件所對應的修補接墊組RPP都接合有修補用的覆晶式發光元件FLED，例如：畫素區PA2和畫素區PA3內分別接合有修補用的覆晶式發光元件FLED2和覆晶式發光元件FLED3。其中，覆晶式發光元件FLED2的發光顏色相同於異常的垂直式發光元件VLED2x的發光顏色，覆晶式發光元件FLED3的發光顏色相同於異常的垂直式發光元件VLED3x的發光顏色。
特別說明的是，透過覆晶式發光元件FLED來取代同一畫素區PA內發光顏色相同且驅動異常的垂直式發光元件VLED，可有效降低修補製程的複雜度，並提升發光元件的修補良率。
以下將針對顯示面板10的製造方法進行示例性地說明。請參照圖4A，垂直式發光元件VLED的形成步驟包括：於生長基板SUB上依序形成緩衝材料層111M、第一型半導體材料層112M、發光材料層113M、第二型半導體材料層114M以及透光電極材料層120M。生長基板SUB例如是砷化鎵（GaAs）基板、磷化鎵（GaP）基板、磷化銦（InP）基板、藍寶石基板、碳化矽（SiC）基板、氮化鎵（GaN）基板或其他適用於磊晶製程的生長基板。在本實施例中，緩衝材料層111M例如是未摻雜的氮化鎵層（non-doped GaN），並且用於提升後續磊晶製程的良率，但不以此為限。在其他實施例中，緩衝材料層111M的材料也可以是氮化銦鎵（InGaN）、砷化鎵、鋁鎵銦磷化物（AlGaInP）、或其他IIIA族和VA族元素組成的材料、或其他合適的材料。
第一型半導體材料層112M和第二型半導體材料層114M的材料例如包括氮化鎵、氮化銦鎵（InGaN）、砷化鎵、鋁鎵銦磷化物（AlGaInP）、或其他IIIA族和VA族元素組成的材料、或其他合適的材料。在本實施例中，第一型半導體材料層112M例如是N型半導體層，第二型半導體材料層114M例如是P型半導體層，但不以此為限。發光材料層113M例如是單一量子井（single quantum well，SQW）層或多重量子井（MQW）。舉例來說，第二型半導體材料層114M提供的電洞與第一型半導體材料層112M提供的電子可以在發光材料層113M結合，並以光的形式釋放出能量。透光電極材料層120M的材料例如包括銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的金屬氧化物、極薄的金屬、奈米碳管、石墨烯或者是上述至少兩者之堆疊層。
請參照圖4B，接著，對上述的磊晶材料層和透光電極材料層120M進行圖案化製程，以形成多個磊晶結構層110和多個透光電極層120，其中磊晶結構層110為緩衝層111、第一型半導體層112、發光層113和第二型半導體層114的多層堆疊結構。此處的圖案化製程例如是微影蝕刻製程（Photolithography and Etching Process，PEP），但不以此為限。在本實施例中，垂直式發光元件VLED的形成步驟更包括：在這些磊晶結構層110和透光電極層120的側壁上形成絕緣層130，如圖4C所示。絕緣層130的材料可包括：氧化物（例如氧化矽、二氧化矽）、氮化物（例如氮化矽）、矽氧氮化物或高分子材料。於此便完成了垂直式發光元件VLED的製作。
在垂直式發光元件VLED的形成步驟完成後，將多個垂直式發光元件VLED轉移至載板結構CS1並移除生長基板SUB，如圖4D所示。在本實施例中，載板結構CS1包括基板SUB”以及設置在基板SUB”上的黏著層ADL，且這些垂直式發光元件VLED可經由此黏著層ADL暫時性地固著於基板SUB”上。
接著，於各個垂直式發光元件VLED上形成焊料圖案SB，如圖3及圖4E所示。在本實施例中，焊料圖案SB的形成步驟可包括：於垂直式發光元件VLED的緩衝層111上依序形成第一金屬層ML1、第二金屬層ML2、第三金屬層ML3以及第四金屬層ML4。第一金屬層ML1的材料例如包括鈦、鉻、鉑或上述材料的組合、或其他對磊晶結構層110能產生良好附著力的材料。
當第四金屬層ML4被加熱以共晶接合至其他元件時，第二金屬層ML2能阻擋第四金屬層ML4中的金屬元素擴散至第一金屬層ML1。亦即，第二金屬層ML2可作為阻障層（barrier）。藉此避免第四金屬層ML4與第一金屬層ML1接著性不佳而無法反應生成介金屬化合物（intermetallic compound），導致第四金屬層ML4與第一金屬層ML1之間出現裂痕。藉此，以確保垂直式發光元件VLED與其他元件的接合關係。第二金屬層ML2的材料例如包括鎳、銅、鈀、或上述材料的組合。
位於第二金屬層ML2與第四金屬層ML4之間的第三金屬層ML3對第四金屬層ML4的濕潤性（wettability）大於第二金屬層ML2對第四金屬層ML4的濕潤性。換句話說，第四金屬層ML4較容易攤平於第三金屬層ML3的表面上。第三金屬層ML3的材料例如包括金、銀、銅、鈀、鎳、或上述材料的組合。第四金屬層ML4的材料例如包括錫、銦、鉍、錫鉍混合金屬、錫銦混合金屬、錫銅混合金屬、錫銀混合金屬、錫銻混合金屬、錫鋅混合金屬、錫銀銅混合金屬、錫銀銅鉍混合金屬、或上述材料的組合。特別注意的是，第四金屬層ML4的熔點低於攝氏260度。
在焊料圖案SB的形成步驟完成後，進行垂直式發光元件VLED的轉移製程。在本實施例中，垂直式發光元件VLED的轉移步驟可包括：利用另一載板結構CS2提取載板結構CS1上的多個垂直式發光元件VLED，如圖4E及4F所示。因此，這些垂直式發光元件VLED是以上下顛倒的方式被轉移至載板結構CS2上。接著，再利用另一載板結構CS3選擇性地提取部分的垂直式發光元件VLED，如圖4F及圖4G所示。舉例來說，在本實施例中，這些垂直式發光元件VLED最終是被轉移並接合至畫素陣列基板100的多個第一接墊P1上，畫素陣列基板100上用於接合同一種發光顏色的垂直式發光元件VLED的多個第一接墊P1是依間距S1沿著方向X進行排列，如圖4H所示。
由於多個垂直式發光元件VLED於載板結構CS2（或生長基板SUB）上的排列間距S2不同於目標基板（即畫素陣列基板100）上的排列間距S1，因此需進行額外的轉移步驟以選擇性地提取滿足此排列間距S1的垂直式發光元件VLED。然而，本發明不限於此。在其他實施例中，根據不同的目標基板設計，多個垂直式發光元件VLED也可直接從載板結構CS1轉移並接合至目標基板上，無須經過額外的轉移步驟。
在多個垂直式發光元件VLED的轉移及接合步驟完成後，進行電性測試以確認接合至畫素陣列基板100的每一個垂直式發光元件VLED是否都能正常運作。當部分的垂直式發光元件VLED無法被正常驅動而發光時則被判定為異常的發光元件，例如：圖1中位於畫素區PA2內的垂直式發光元件VLED2x以及位於畫素區PA3內的垂直式發光元件VLED3x。此時，可對於這些驅動異常的發光元件進行修補。
請同時參照圖1及圖2，舉例來說，當畫素區PA2內設置的第二垂直式發光元件VLED2x被判定為異常時，可將發光顏色與第二垂直式發光元件VLED2x相同的覆晶式發光元件FLED2接合至異常的第二垂直式發光元件VLED2x附近的修補接墊組RPP。在本實施例中，異常的第二垂直式發光元件VLED2x和第三垂直式發光元件VLED3x在修補製程完成後仍保留在畫素陣列基板100上。為了確保修補用的覆晶式發光元件FLED的電性不受異常的垂直式發光元件的影響，修補製程的步驟還可包括：進行一斷線步驟，以解除異常的垂直式發光元件與對應的第二接墊P2的電性連接關係。此處的斷線步驟例如包括：對導電線路CL進行雷射切割（laser cutting）程序，以形成具有斷開處CLa的導電線路CLx。
在本實施例中，第一修補接墊RP1和第二修補接墊RP2可分別電性連接第一接墊P1和第二接墊P2。舉例來說，第二接墊P2和第二修補接墊RP2可同時電性連接至一主動元件（未繪示），該主動元件用以控制流經垂直式發光元件VLED（或覆晶式發光元件FLED）的驅動電流。因此，上述的斷線步驟還可包括：對異常的垂直式發光元件與該主動元件（或修補用的覆晶式發光元件FLED）的連接導線進行雷射切割程序。也就是說，本揭露並不以圖式揭示內容來限制斷線的方式。於此便完成本實施例的顯示面板10的製作。
進一步而言，倘若修補用的覆晶式發光元件FLED接合至對應的修補接墊組RPP後也無法正常運作而被判定為異常的覆晶式發光元件（如圖5A的覆晶式發光元件FLED2x）時，可將異常的覆晶式發光元件移除（如圖5B所示），以釋放出修補接墊組RPP來進行另一次修補用的覆晶式發光元件FLED的接合製程。
由於修補用的覆晶式發光元件FLED也是使用前述的焊料圖案SB與修補接墊組RPP電性接合，因此具有較佳的重工性。相較於一般使用異方性導電膜（anisotropic conductive film，ACF）進行接合的方式來說，焊料圖案SB殘留在修補接墊組RPP上的部分SBr也較容易被清除。因此，可大幅降低修補製程的難度，有助於提升修補良率。
請參照圖6，在另一實施例中，顯示面板10A的修補製程還可選擇性地包括：異常的垂直式發光元件的移除步驟。也就是說，顯示面板10A並未保留異常的垂直式發光元件（如圖1的第二垂直式發光元件VLED2x和第三垂直式發光元件VLED3x）。也因此，顯示面板10A的修補製程可省去前述的斷線步驟。
以下將列舉另一些實施例以詳細說明本揭露，其中相同的構件將標示相同的符號，並且省略相同技術內容的說明，省略部分請參考前述實施例，以下不再贅述。
圖7是依照本發明的第三實施例的顯示面板的剖視示意圖。請參照圖7，本實施例的顯示面板20與圖2的顯示面板10的差異在於：顯示面板20還可選擇性地包括吸光層ABL和光學膜層150。吸光層ABL覆蓋在畫素陣列基板100的表面上。透過此吸光層ABL的設置，可有效降低顯示面板20對外部環境光的整體反射率，有助於提升顯示品質（例如暗態對比）。吸光層ABL的材料例如包括黑色樹脂材料。
需說明的是，本發明並不以圖式揭示內容而加以限制吸光層ABL的設置處，只要吸光層ABL相對於畫素陣列基板100的位置低於垂直式發光元件VLED和覆晶式發光元件FLED相對於畫素陣列基板100的位置即可。
另一方面，為了增加發光元件的出光效率，垂直式發光元件VLED和覆晶式發光元件FLED上還覆蓋有光學膜層150。在本實施例中，光學膜層150例如是折射率匹配層，且其材料可包括矽膠或壓克力等材料。
圖8是依照本發明的第四實施例的顯示面板的剖視示意圖。請參照圖8，本實施例的顯示面板30與圖7的顯示面板20的差異在於：顯示面板30還可進一步地包括設置在光學膜層150上的另一光學膜層170。在本實施例中，光學膜層170例如是抗反射層、防眩層、抗汙或上述膜層的堆疊結構。據此以降低顯示面板30對外部環境光的整體反射率，有助於提升顯示品質（例如暗態對比）。
綜上所述，在本發明的一實施例的顯示面板中，位於第一畫素區內的多個垂直式發光元件用於顯示至少兩種顏色，而位於第二畫素區內的多個垂直式發光元件和覆晶式發光元件也用於顯示這至少兩種顏色。透過覆晶式發光元件來取代同一畫素區內發光顏色相同且驅動異常的垂直式發光元件，可有效降低修補製程的複雜度，並提升發光元件的修補良率。
10、10A、20、30:顯示面板 100:畫素陣列基板 110:磊晶結構層 111:緩衝層 111M:緩衝材料層 112:第一型半導體層 112M:第一型半導體材料層 113:發光層 113M:發光材料層 114:第二型半導體層 114M:第二型半導體材料層 120:透光電極層 120M:透光電極材料層 130:絕緣層 150、170:光學膜層 ABL:吸光層 ADL:黏著層 CL、CLx:導電線路 CLa:斷開處 CS1、CS2、CS3:載板結構 FLED、FLED2、FLED2x、FLED3:覆晶式發光元件 ML1~ML4:第一金屬層~第四金屬層 OP1、OP2、PLa、PLb:開口 P1:第一接墊 P2:第二接墊 PA、PA1、PA2、PA3:畫素區 PL:平坦層 PP:接墊組 RP1:第一修補接墊 RP2:第二修補接墊 RPP:修補接墊組 S1、S2:間距 SB:焊料圖案 SBr:部分 SUB:生長基板 SUB”:基板 VLED、VLED1、VLED2、VLED2x、VLED3、VLED3x:垂直式發光元件 X、Y、Z:方向 A-A’:剖線
圖1是依照本發明的第一實施例的顯示面板的正視示意圖。 圖2是圖1的顯示面板的剖視示意圖。 圖3是圖2的焊料圖案的剖視示意圖。 圖4A至圖4H是圖1的顯示面板的製造流程的剖視示意圖。 圖5A及圖5B是圖1的顯示面板的修補製程的剖視示意圖。 圖6是依照本發明的第二實施例的顯示面板的正視示意圖。 圖7是依照本發明的第三實施例的顯示面板的剖視示意圖。 圖8是依照本發明的第四實施例的顯示面板的剖視示意圖。
10:顯示面板
100:畫素陣列基板
CL、CLx:導電線路
CLa:斷開處
FLED、FLED2、FLED3:覆晶式發光元件
P1:第一接墊
P2:第二接墊
PA、PA1、PA2、PA3:畫素區
PP:接墊組
RP1:第一修補接墊
RP2:第二修補接墊
RPP:修補接墊組
S1:間距
VLED、VLED1、VLED2、VLED2x、VLED3、VLED3x:垂直式發光元件
X、Y、Z:方向
A-A’:剖線

Claims (18)

  1. 一種顯示面板，包括： 一畫素陣列基板，具有一第一畫素區與一第二畫素區； 多個垂直式發光元件，設置在該第一畫素區與該第二畫素區內，並且電性連接該畫素陣列基板；以及 一覆晶式發光元件，設置在該第二畫素區內，並且電性連接該畫素陣列基板，其中該覆晶式發光元件的發光顏色與該些垂直式發光元件位於該第一畫素區的其中一者的發光顏色相同。
  2. 如請求項1所述的顯示面板，其中該第一畫素區和該第二畫素區各自設有多個第一接墊和多個修補接墊組，該些第一接墊分別電性連接該些修補接墊組，該些垂直式發光元件分別與該些第一接墊電性接合，該覆晶式發光元件電性接合至該些修補接墊組的其中一者。
  3. 如請求項2所述的顯示面板，其中該第一畫素區和該第二畫素區各自還設有多個第二接墊，該些垂直式發光元件各自經由一導電線路與該些第二接墊的其中一者電性連接。
  4. 如請求項3所述的顯示面板，其中各該些修補接墊組包括一第一修補接墊和一第二修補接墊，該第一修補接墊電性連接該些第一接墊的其中一者，且該第二修補接墊電性連接該些第二接墊的其中一者。
  5. 如請求項3所述的顯示面板，更包括： 一平坦層，覆蓋該畫素陣列基板和各該些垂直式發光元件的一側壁，並暴露出該些第二接墊和該些修補接墊組，其中該導電線路延伸於該平坦層上，以電性連接該些第二接墊的其中一者和該些垂直式發光元件的其中一者。
  6. 如請求項2所述的顯示面板，其中該些垂直式發光元件包括位於該第二畫素區的一第一垂直式發光元件和一第二垂直式發光元件，該第一垂直式發光元件和該第二垂直式發光元件各自的發光顏色不同於該覆晶式發光元件的發光顏色，該些修補接墊組的其中該者電性連接該些第一接墊位於該第二畫素區的一者，且任一該些垂直式發光元件未與該些第一接墊的該者電性接合。
  7. 如請求項1所述的顯示面板，其中各該些垂直式發光元件經由一焊料圖案與該畫素陣列基板電性接合，且該焊料圖案為多個金屬層的堆疊結構。
  8. 如請求項7所述的顯示面板，其中該些金屬層包括依序設置在各該些垂直式發光元件上的一第一金屬層、一第二金屬層、一第三金屬層和一第四金屬層，該第一金屬層的材料包括鈦、鉻、鉑或上述材料的組合，該第二金屬層的材料包括鎳、銅、鈀、或上述材料的組合，該第三金屬層的材料包括金、銀、銅、鈀、鎳、或上述材料的組合，該第四金屬層的材料包括錫、銦、鉍、錫鉍混合金屬、錫銦混合金屬、錫銅混合金屬、錫銀混合金屬、錫銻混合金屬、錫鋅混合金屬、錫銀銅混合金屬、錫銀銅鉍混合金屬、或上述材料的組合。
  9. 如請求項7所述的顯示面板，其中該些金屬層中接觸該畫素陣列基板的一該金屬層的熔點低於攝氏260度。
  10. 如請求項1所述的顯示面板，其中該些垂直式發光元件包括位於該第二畫素區的一第一垂直式發光元件、一第二垂直式發光元件和一第三垂直式發光元件，該第一垂直式發光元件、該第二垂直式發光元件和該第三垂直式發光元件的其中一者的發光顏色與該覆晶式發光元件的發光顏色相同。
  11. 如請求項1所述的顯示面板，更包括： 一吸光層，設置在該些垂直式發光元件與該覆晶式發光元件之間，該吸光層相對於該畫素陣列基板的位置低於該些垂直式發光元件與該覆晶式發光元件相對於該畫素陣列基板的位置。
  12. 如請求項1所述的顯示面板，更包括： 一光學膜層，覆蓋該些垂直式發光元件和該覆晶式發光元件。
  13. 一種顯示面板，包括： 一畫素陣列基板，具有多個畫素區以及設置在各該些畫素區內的一第一接墊、一第一修補接墊和一第二修補接墊，該第一接墊電性連接該第一修補接墊； 一垂直式發光元件，電性接合於該些畫素區的其中一者內的該第一接墊；以及 一覆晶式發光元件，電性接合於該些畫素區的其中該者內的該第一修補接墊和該第二修補接墊，其中該覆晶式發光元件的發光顏色與該垂直式發光元件的發光顏色相同。
  14. 如請求項13所述的顯示面板，其中該畫素陣列基板在各該些畫素區還設有一第二接墊，位於同一該畫素區內的該第二接墊與該第二修補接墊電性連接，且該垂直式發光元件經由一導電線路與該些畫素區的其中該者內的該第二接墊電性連接。
  15. 如請求項14所述的顯示面板，更包括： 一平坦層，覆蓋該畫素陣列基板和該垂直式發光元件的一側壁，並暴露出該第一修補接墊和該第二修補接墊，其中該導電線路延伸於該平坦層上，以電性連接位於同一該畫素區內的該第二接墊和該垂直式發光元件。
  16. 如請求項13所述的顯示面板，其中該垂直式發光元件經由一焊料圖案與該畫素陣列基板電性接合，該焊料圖案為多個金屬層的堆疊結構，且該些金屬層中接觸該第一接墊的一者的熔點低於攝氏260度。
  17. 如請求項13所述的顯示面板，更包括： 一吸光層，設置在該垂直式發光元件與該覆晶式發光元件各自的周圍，該吸光層相對於該畫素陣列基板的位置低於該些垂直式發光元件與該覆晶式發光元件相對於該畫素陣列基板的位置。
  18. 如請求項13所述的顯示面板，更包括： 一光學膜層，覆蓋該垂直式發光元件和該覆晶式發光元件。
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