CN114613801A - 显示面板 - Google Patents

显示面板 Download PDF

Info

Publication number
CN114613801A
CN114613801A CN202210350437.2A CN202210350437A CN114613801A CN 114613801 A CN114613801 A CN 114613801A CN 202210350437 A CN202210350437 A CN 202210350437A CN 114613801 A CN114613801 A CN 114613801A
Authority
CN
China
Prior art keywords
light emitting
vertical light
pad
display panel
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210350437.2A
Other languages
English (en)
Inventor
吴仰恩
林世雄
苏振嘉
李俊雨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AU Optronics Corp
Original Assignee
AU Optronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AU Optronics Corp filed Critical AU Optronics Corp
Publication of CN114613801A publication Critical patent/CN114613801A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13084—Four-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/13118—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/1312—Antimony [Sb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13164—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13169—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/13171—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/2405—Shape
    • H01L2224/24051—Conformal with the semiconductor or solid-state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24105—Connecting bonding areas at different heights
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/24147—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the HDI interconnect not connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted, e.g. the upper semiconductor or solid-state body being mounted in a cavity or on a protrusion of the lower semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27002—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for supporting the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29084—Four-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29109—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29113—Bismuth [Bi] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29118—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/2912—Antimony [Sb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29164—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29169—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29171—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/98—Methods for disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0134—Quaternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板包括像素阵列基板、多个垂直式发光元件以及覆晶式发光元件。像素阵列基板具有第一像素区与第二像素区。这些垂直式发光元件设置在第一像素区与第二像素区内，并且电性连接像素阵列基板。覆晶式发光元件设置在第二像素区内，并且电性连接像素阵列基板。覆晶式发光元件的发光颜色与这些垂直式发光元件位于第一像素区的其中一者的发光颜色相同。

Description

显示面板
技术领域
本发明涉及一种显示面板，且特别涉及一种具有发光元件的显示面板。
背景技术
近年来，在有机发光二极管(Organic light-emitting diode，OLED)显示面板的制造成本偏高及其使用寿命无法与现行的主流显示器相抗衡的情况下，微型发光二极管显示器(Micro LED Display)逐渐吸引各科技大厂的投资目光。微型发光二极管显示器具有与有机发光二极管显示技术相当的光学表现，例如高色彩饱和度、应答速度快及高对比，且具有低耗能及材料使用寿命长的优势。
基于成本与显示品质的考量，一种采用垂直式微型发光二极管作为发光元件的显示技术被提出。此类发光元件的一侧电极在接合至电路背板后，需进行额外的光刻蚀刻工艺来形成导电线路，使另一侧电极能经由此导电线路与电路背板电性连接。然而，上述的连接关系会增加修补工艺的难度。
发明内容
本发明提供一种具有垂直式发光元件的显示面板，其修补工艺的重工性较佳，且修补良率也较高。
本发明的显示面板，包括像素阵列基板、多个垂直式发光元件以及覆晶式发光元件。像素阵列基板具有第一像素区与第二像素区。这些垂直式发光元件设置在第一像素区与第二像素区内，并且电性连接像素阵列基板。覆晶式发光元件设置在第二像素区内，并且电性连接像素阵列基板。覆晶式发光元件的发光颜色与这些垂直式发光元件位于第一像素区的其中一者的发光颜色相同。
本发明的显示面板，包括像素阵列基板、垂直式发光元件以及覆晶式发光元件。像素阵列基板具有多个像素区以及设置在各个像素区内的第一接垫、第一修补接垫和第二修补接垫。第一接垫电性连接第一修补接垫。垂直式发光元件电性接合于这些像素区的其中一者内的第一接垫。覆晶式发光元件电性接合于这些像素区的其中该者内的第一修补接垫和第二修补接垫。覆晶式发光元件的发光颜色与垂直式发光元件的发光颜色相同。
基于上述，在本发明的一实施例的显示面板中，位于第一像素区内的多个垂直式发光元件用于显示至少两种颜色，而位于第二像素区内的多个垂直式发光元件和覆晶式发光元件也用于显示这至少两种颜色。通过覆晶式发光元件来取代同一像素区内发光颜色相同且驱动异常的垂直式发光元件，可有效降低修补工艺的复杂度，并提升发光元件的修补良率。
附图说明
图1是依照本发明的第一实施例的显示面板的正视示意图。
图2是图1的显示面板的剖视示意图。
图3是图2的焊料图案的剖视示意图。
图4A至图4H是图1的显示面板的制造流程的剖视示意图。
图5A及图5B是图1的显示面板的修补工艺的剖视示意图。
图6是依照本发明的第二实施例的显示面板的正视示意图。
图7是依照本发明的第三实施例的显示面板的剖视示意图。
图8是依照本发明的第四实施例的显示面板的剖视示意图。
附图标记说明：
10、10A、20、30：显示面板
100：像素阵列基板
110：外延结构层
111：缓冲层
111M：缓冲材料层
112：第一型半导体层
112M：第一型半导体材料层
113：发光层
113M：发光材料层
114：第二型半导体层
114M：第二型半导体材料层
120：透光电极层
120M：透光电极材料层
130：绝缘层
150、170：光学膜层
ABL：吸光层
ADL：粘着层
CL、CLx：导电线路
CLa：断开处
CS1、CS2、CS3：载板结构
FLED、FLED2、FLED2x、FLED3：覆晶式发光元件
ML1～ML4：第一金属层～第四金属层
OP1、OP2、PLa、PLb：开口
P1：第一接垫
P2：第二接垫
PA、PA1、PA2、PA3：像素区
PL：平坦层
PP：接垫组
RP1：第一修补接垫
RP2：第二修补接垫
RPP：修补接垫组
S1、S2：间距
SB：焊料图案
SBr：部分
SUB：生长基板
SUB”：基板
VLED、VLED1、VLED2、VLED2x、VLED3、VLED3x：垂直式发光元件
X、Y、Z：方向
A-A’：剖线
具体实施方式
本文使用的“约”、“近似”、“本质上”、或“实质上”包括所述值和在本领域普通技术人员确定的特定值的可接受的偏差范围内的平均值，考虑到所讨论的测量和与测量相关的误差的特定数量(即，测量系统的限制)。例如，“约”可以表示在所述值的一个或多个标准偏差内，或例如±30％、±20％、±15％、±10％、±5％内。再者，本文使用的“约”、“近似”、“本质上”、或“实质上”可依测量性质、切割性质或其它性质，来选择较可接受的偏差范围或标准偏差，而可不用一个标准偏差适用全部性质。
在附图中，为了清楚起见，放大了层、膜、面板、区域等的厚度。应当理解，当诸如层、膜、区域或基板的元件被称为在另一元件“上”或“连接到”另一元件时，其可以直接在另一元件上或与另一元件连接，或者中间元件可以也存在。相反，当元件被称为“直接在另一元件上”或“直接连接到”另一元件时，不存在中间元件。如本文所使用的，“连接”可以指物理及/或电性连接。再者，“电性连接”可为二元件间存在其它元件。
现将详细地参考本发明的示范性实施方式，示范性实施方式的实例说明于说明书附图中。只要有可能，相同元件符号在附图和描述中用来表示相同或相似部分。
图1是依照本发明的第一实施例的显示面板的正视示意图。图2是图1的显示面板的剖视示意图。图3是图2的焊料图案的剖视示意图。图2对应图1的剖线A-A’。图4A至图4H是图1的显示面板的制造流程的剖视示意图。图5A及图5B是图1的显示面板的修补工艺的剖视示意图。图6是依照本发明的第二实施例的显示面板的正视示意图。为清楚呈现起见，图1省略了图2中平坦层PL的示出。
请参照图1及图2，显示面板10包括像素阵列基板100和多个垂直式发光元件VLED。像素阵列基板100具有多个像素区PA，且这些垂直式发光元件VLED设置在这些像素区PA内。在本实施例中，每一像素区PA内可设有三个垂直式发光元件VLED，分别为第一垂直式发光元件VLED1、第二垂直式发光元件VLED2和第三垂直式发光元件VLED3，且这三个垂直式发光元件VLED的发光颜色彼此不同。例如：第一垂直式发光元件VLED1、第二垂直式发光元件VLED2和第三垂直式发光元件VLED3分别用于发出红光、绿光和蓝光。然而，本发明不限于此。在其他实施例中，每一像素区PA内所预设的发光元件数量和发光颜色数量当可根据实际的光学设计或应用需求而调整。
在本实施例中，每一像素区PA都设有三个第一接垫P1和三个第二接垫P2。第一垂直式发光元件VLED1、第二垂直式发光元件VLED2和第三垂直式发光元件VLED3各自接合至对应的接垫组PP(即第一接垫P1和第二接垫P2的组合)以电性连接像素阵列基板100，但不以此为限。在其他实施例中，显示面板也可以共电极层来取代前述的多个第二接垫P2。
举例来说，垂直式发光元件VLED可包括外延结构层110、透光电极层120和绝缘层130。外延结构层110例如是缓冲层111、第一型半导体层112、发光层113和第二型半导体层114的多层堆叠结构。缓冲层111、第一型半导体层112、发光层113和第二型半导体层114分别是非掺杂氮化镓层、N型氮化镓层、多重量子井(multiple quantum well，MQW)层和P型氮化镓层，但不以此为限。
透光电极层120设置在外延结构层110的第二型半导体层114的一侧，并且电性连接第二型半导体层114。透光电极层120的材料例如包括：铟锡氧化物(indium-tin oxide，ITO)、铟锌氧化物(indium-zinc oxide，IZO)、或其他合适的透光金属氧化物。绝缘层130覆盖且围绕外延结构层110和透光电极层120的侧壁，但不以此为限。在其他实施例中，绝缘层还可进一步覆盖透光电极层120背离外延结构层110的表面。
在本实施例中，垂直式发光元件VLED设有缓冲层111的一侧可经由焊料图案SB与像素阵列基板100电性接合，而设有透光电极层120的另一侧可经由导电线路CL与像素阵列基板100电性连接。请同时参照图3，举例来说，焊料图案SB为按序设置在垂直式发光元件VLED上的第一金属层ML1、第二金属层ML2、第三金属层ML3和第四金属层ML4的堆叠结构。亦即，第一金属层ML1接触垂直式发光元件VLED，而第四金属层ML4接触第一接垫P1。特别说明的是，较靠近第一接垫P1的第四金属层ML4，其熔点低于摄氏260度。也就是说，第四金属层ML4是由低温焊料所形成。因此，垂直式发光元件VLED与像素阵列基板100的接合可在较低的工艺温度中进行。
另一方面，显示面板10还可包括平坦层PL，覆盖像素阵列基板100与各个垂直式发光元件VLED的侧壁，并且暴露出前述的多个第二接垫P2和垂直式发光元件VLED的透光电极层120。导电线路CL沿着方向Z重叠于第二接垫P2和垂直式发光元件VLED。更具体地说，覆盖透光电极层120的导电线路CL延伸于平坦层PL上，并且伸入平坦层PL的开口PLa以电性连接对应的第二接垫P2。
然而，本发明不限于此。在其他实施例中，平坦层也可仅设置在垂直式发光元件VLED的侧壁周围，以提供导电线路CL走线用。换言之，平坦层是以彼此分离的多个岛状结构覆盖这些垂直式发光元件VLED的侧壁。此外，在一些实施例中，平坦层的材质还可选用具有高反射率的材料，以增加发光元件的出光效率。
为了增加显示面板10的生产良率，显示面板10的像素区PA设有多个修补接垫组RPP，且平坦层PL还具有暴露出这些修补接垫组RPP的开口PLb。在本实施例中，每一个像素区PA所设置的修补接垫组RPP数量是以三个为例进行示范性地说明，且这三个修补接垫组RPP分别对应三个接垫组PP设置。也就是说，各像素区PA内的每一个垂直式发光元件VLED都配置有一个修补接垫组RPP。
举例来说，显示面板10的多个像素区PA的多个接垫组PP分别沿着方向X和方向Y排成多列和多行。亦即，用于接合垂直式发光元件VLED的接垫组PP是以阵列的方式排列于像素阵列基板100上。对应地，多个像素区PA的多个修补接垫组RPP分别沿着方向X和方向Y排成多列和多行，且修补接垫组RPP与接垫组PP沿着方向Y交替排列。换句话说，每一个垂直式发光元件VLED沿着方向Y的一侧都预留有一组修补接合垫RPP。
然而，本发明不限于此。在其他实施例中，各像素区PA内所配置的接垫组PP数量也可不同于修补接垫组RPP的数量。亦即，各像素区PA内的垂直式发光元件VLED数量与修补接垫组RPP数量的配置可以是多对一或一对多的关系。另一方面，各像素区PA内的修补接垫组RPP和接垫组PP的排列方式也可根据实际的产品设计而调整，本发明并不以附图公开内容而加以限制。
特别注意的是，在本实施例中，修补用的发光元件类型不同于主发光元件类型(即垂直式发光元件VLED)。显示面板10的修补接垫组RPP适于接合覆晶式发光元件FLED。详细而言，修补接垫组RPP为第一修补接垫RP1和第二修补接垫RP2的组合，第一修补接垫RP1和第二修补接垫RP2分别电性连接欲修补的垂直式发光元件VLED的第一接垫P1和第二接垫P2。
在本实施例中，显示面板10的部分像素区PA被检测出显示异常的垂直式发光元件VLED。举例来说，不同于正常的像素区PA1，像素区PA2和像素区PA3分别被检测出驱动异常的垂直式发光元件VLED2x和垂直式发光元件VLED3x。因此，这些异常的垂直式发光元件所对应的修补接垫组RPP都接合有修补用的覆晶式发光元件FLED，例如：像素区PA2和像素区PA3内分别接合有修补用的覆晶式发光元件FLED2和覆晶式发光元件FLED3。其中，覆晶式发光元件FLED2的发光颜色相同于异常的垂直式发光元件VLED2x的发光颜色，覆晶式发光元件FLED3的发光颜色相同于异常的垂直式发光元件VLED3x的发光颜色。
特别说明的是，通过覆晶式发光元件FLED来取代同一像素区PA内发光颜色相同且驱动异常的垂直式发光元件VLED，可有效降低修补工艺的复杂度，并提升发光元件的修补良率。
以下将针对显示面板10的制造方法进行示例性地说明。请参照图4A，垂直式发光元件VLED的形成步骤包括：于生长基板SUB上按序形成缓冲材料层111M、第一型半导体材料层112M、发光材料层113M、第二型半导体材料层114M以及透光电极材料层120M。生长基板SUB例如是砷化镓(GaAs)基板、磷化镓(GaP)基板、磷化铟(InP)基板、蓝宝石基板、碳化硅(SiC)基板、氮化镓(GaN)基板或其他适用于外延工艺的生长基板。在本实施例中，缓冲材料层111M例如是未掺杂的氮化镓层(non-doped GaN)，并且用于提升后续外延工艺的良率，但不以此为限。在其他实施例中，缓冲材料层111M的材料也可以是氮化铟镓(InGaN)、砷化镓、铝镓铟磷化物(AlGaInP)、或其他IIIA族和VA族元素组成的材料、或其他合适的材料。
第一型半导体材料层112M和第二型半导体材料层114M的材料例如包括氮化镓、氮化铟镓(InGaN)、砷化镓、铝镓铟磷化物(AlGaInP)、或其他IIIA族和VA族元素组成的材料、或其他合适的材料。在本实施例中，第一型半导体材料层112M例如是N型半导体层，第二型半导体材料层114M例如是P型半导体层，但不以此为限。发光材料层113M例如是单一量子井(single quantum well，SQW)层或多重量子井(MQW)。举例来说，第二型半导体材料层114M提供的空穴与第一型半导体材料层112M提供的电子可以在发光材料层113M结合，并以光的形式释放出能量。透光电极材料层120M的材料例如包括铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、或其它合适的金属氧化物、极薄的金属、纳米碳管、石墨烯或者是上述至少两者的堆叠层。
请参照图4B，接着，对上述的外延材料层和透光电极材料层120M进行图案化工艺，以形成多个外延结构层110和多个透光电极层120，其中外延结构层110为缓冲层111、第一型半导体层112、发光层113和第二型半导体层114的多层堆叠结构。此处的图案化工艺例如是光刻蚀刻工艺(Photolithography and Etching Process，PEP)，但不以此为限。在本实施例中，垂直式发光元件VLED的形成步骤还包括：在这些外延结构层110和透光电极层120的侧壁上形成绝缘层130，如图4C所示。绝缘层130的材料可包括：氧化物(例如氧化硅、二氧化硅)、氮化物(例如氮化硅)、硅氧氮化物或高分子材料。于此便完成了垂直式发光元件VLED的制作。
在垂直式发光元件VLED的形成步骤完成后，将多个垂直式发光元件VLED转移至载板结构CS1并移除生长基板SUB，如图4D所示。在本实施例中，载板结构CS1包括基板SUB”以及设置在基板SUB”上的粘着层ADL，且这些垂直式发光元件VLED可经由此粘着层ADL暂时性地固着于基板SUB”上。
接着，于各个垂直式发光元件VLED上形成焊料图案SB，如图3及图4E所示。在本实施例中，焊料图案SB的形成步骤可包括：于垂直式发光元件VLED的缓冲层111上按序形成第一金属层ML1、第二金属层ML2、第三金属层ML3以及第四金属层ML4。第一金属层ML1的材料例如包括钛、铬、铂或上述材料的组合、或其他对外延结构层110能产生良好附着力的材料。
当第四金属层ML4被加热以共晶接合至其他元件时，第二金属层ML2能阻挡第四金属层ML4中的金属元素扩散至第一金属层ML1。亦即，第二金属层ML2可作为阻障层(barrier)。借此避免第四金属层ML4与第一金属层ML1接着性不佳而无法反应生成介金属化合物(intermetallic compound)，导致第四金属层ML4与第一金属层ML1之间出现裂痕。因此，以确保垂直式发光元件VLED与其他元件的接合关系。第二金属层ML2的材料例如包括镍、铜、钯、或上述材料的组合。
位于第二金属层ML2与第四金属层ML4之间的第三金属层ML3对第四金属层ML4的湿润性(wettability)大于第二金属层ML2对第四金属层ML4的湿润性。换句话说，第四金属层ML4较容易摊平于第三金属层ML3的表面上。第三金属层ML3的材料例如包括金、银、铜、钯、镍、或上述材料的组合。第四金属层ML4的材料例如包括锡、铟、铋、锡铋混合金属、锡铟混合金属、锡铜混合金属、锡银混合金属、锡锑混合金属、锡锌混合金属、锡银铜混合金属、锡银铜铋混合金属、或上述材料的组合。特别注意的是，第四金属层ML4的熔点低于摄氏260度。
在焊料图案SB的形成步骤完成后，进行垂直式发光元件VLED的转移工艺。在本实施例中，垂直式发光元件VLED的转移步骤可包括：利用另一载板结构CS2提取载板结构CS1上的多个垂直式发光元件VLED，如图4E及4F所示。因此，这些垂直式发光元件VLED是以上下颠倒的方式被转移至载板结构CS2上。接着，再利用另一载板结构CS3选择性地提取部分的垂直式发光元件VLED，如图4F及图4G所示。举例来说，在本实施例中，这些垂直式发光元件VLED最终是被转移并接合至像素阵列基板100的多个第一接垫P1上，像素阵列基板100上用于接合同一种发光颜色的垂直式发光元件VLED的多个第一接垫P1是依间距S1沿着方向X进行排列，如图4H所示。
由于多个垂直式发光元件VLED于载板结构CS2(或生长基板SUB)上的排列间距S2不同于目标基板(即像素阵列基板100)上的排列间距S1，因此需进行额外的转移步骤以选择性地提取满足此排列间距S1的垂直式发光元件VLED。然而，本发明不限于此。在其他实施例中，根据不同的目标基板设计，多个垂直式发光元件VLED也可直接从载板结构CS1转移并接合至目标基板上，无须经过额外的转移步骤。
在多个垂直式发光元件VLED的转移及接合步骤完成后，进行电性测试以确认接合至像素阵列基板100的每一个垂直式发光元件VLED是否都能正常运行。当部分的垂直式发光元件VLED无法被正常驱动而发光时则被判定为异常的发光元件，例如：图1中位于像素区PA2内的垂直式发光元件VLED2x以及位于像素区PA3内的垂直式发光元件VLED3x。此时，可对于这些驱动异常的发光元件进行修补。
请同时参照图1及图2，举例来说，当像素区PA2内设置的第二垂直式发光元件VLED2x被判定为异常时，可将发光颜色与第二垂直式发光元件VLED2x相同的覆晶式发光元件FLED2接合至异常的第二垂直式发光元件VLED2x附近的修补接垫组RPP。在本实施例中，异常的第二垂直式发光元件VLED2x和第三垂直式发光元件VLED3x在修补工艺完成后仍保留在像素阵列基板100上。为了确保修补用的覆晶式发光元件FLED的电性不受异常的垂直式发光元件的影响，修补工艺的步骤还可包括：进行一断线步骤，以解除异常的垂直式发光元件与对应的第二接垫P2的电性连接关系。此处的断线步骤例如包括：对导电线路CL进行激光切割(laser cutting)程序，以形成具有断开处CLa的导电线路CLx。
在本实施例中，第一修补接垫RP1和第二修补接垫RP2可分别电性连接第一接垫P1和第二接垫P2。举例来说，第二接垫P2和第二修补接垫RP2可同时电性连接至一主动元件(未示出)，该主动元件用以控制流经垂直式发光元件VLED(或覆晶式发光元件FLED)的驱动电流。因此，上述的断线步骤还可包括：对异常的垂直式发光元件与该主动元件(或修补用的覆晶式发光元件FLED)的连接导线进行激光切割程序。也就是说，本公开并不以附图公开内容来限制断线的方式。于此便完成本实施例的显示面板10的制作。
进一步而言，倘若修补用的覆晶式发光元件FLED接合至对应的修补接垫组RPP后也无法正常运行而被判定为异常的覆晶式发光元件(如图5A的覆晶式发光元件FLED2x)时，可将异常的覆晶式发光元件移除(如图5B所示)，以释放出修补接垫组RPP来进行另一次修补用的覆晶式发光元件FLED的接合工艺。
由于修补用的覆晶式发光元件FLED也是使用前述的焊料图案SB与修补接垫组RPP电性接合，因此具有较佳的重工性。相较于一般使用异方性导电膜(anisotropicconductive film，ACF)进行接合的方式来说，焊料图案SB残留在修补接垫组RPP上的部分SBr也较容易被清除。因此，可大幅降低修补工艺的难度，有助于提升修补良率。
请参照图6，在另一实施例中，显示面板10A的修补工艺还可选择性地包括：异常的垂直式发光元件的移除步骤。也就是说，显示面板10A并未保留异常的垂直式发光元件(如图1的第二垂直式发光元件VLED2x和第三垂直式发光元件VLED3x)。也因此，显示面板10A的修补工艺可省去前述的断线步骤。
以下将列举另一些实施例以详细说明本公开，其中相同的构件将标示相同的符号，并且省略相同技术内容的说明，省略部分请参考前述实施例，以下不再赘述。
图7是依照本发明的第三实施例的显示面板的剖视示意图。请参照图7，本实施例的显示面板20与图2的显示面板10的差异在于：显示面板20还可选择性地包括吸光层ABL和光学膜层150。吸光层ABL覆盖在像素阵列基板100的表面上。通过此吸光层ABL的设置，可有效降低显示面板20对外部环境光的整体反射率，有助于提升显示品质(例如暗态对比)。吸光层ABL的材料例如包括黑色树脂材料。
需说明的是，本发明并不以附图公开内容而加以限制吸光层ABL的设置处，只要吸光层ABL相对于像素阵列基板100的位置低于垂直式发光元件VLED和覆晶式发光元件FLED相对于像素阵列基板100的位置即可。
另一方面，为了增加发光元件的出光效率，垂直式发光元件VLED和覆晶式发光元件FLED上还覆盖有光学膜层150。在本实施例中，光学膜层150例如是折射率匹配层，且其材料可包括硅胶或亚克力等材料。
图8是依照本发明的第四实施例的显示面板的剖视示意图。请参照图8，本实施例的显示面板30与图7的显示面板20的差异在于：显示面板30还可进一步地包括设置在光学膜层150上的另一光学膜层170。在本实施例中，光学膜层170例如是抗反射层、防眩层、抗污或上述膜层的堆叠结构。据此以降低显示面板30对外部环境光的整体反射率，有助于提升显示品质(例如暗态对比)。
综上所述，在本发明的一实施例的显示面板中，位于第一像素区内的多个垂直式发光元件用于显示至少两种颜色，而位于第二像素区内的多个垂直式发光元件和覆晶式发光元件也用于显示这至少两种颜色。通过覆晶式发光元件来取代同一像素区内发光颜色相同且驱动异常的垂直式发光元件，可有效降低修补工艺的复杂度，并提升发光元件的修补良率。

Claims (18)

1.一种显示面板，包括：
一像素阵列基板，具有一第一像素区与一第二像素区；
多个垂直式发光元件，设置在该第一像素区与该第二像素区内，并且电性连接该像素阵列基板；以及
一覆晶式发光元件，设置在该第二像素区内，并且电性连接该像素阵列基板，其中该覆晶式发光元件的发光颜色与该些垂直式发光元件位于该第一像素区的其中一者的发光颜色相同。
2.如权利要求1所述的显示面板，其中该第一像素区和该第二像素区各自设有多个第一接垫和多个修补接垫组，该些第一接垫分别电性连接该些修补接垫组，该些垂直式发光元件分别与该些第一接垫电性接合，该覆晶式发光元件电性接合至该些修补接垫组的其中一者。
3.如权利要求2所述的显示面板，其中该第一像素区和该第二像素区各自还设有多个第二接垫，该些垂直式发光元件各自经由一导电线路与该些第二接垫的其中一者电性连接。
4.如权利要求3所述的显示面板，其中各该些修补接垫组包括一第一修补接垫和一第二修补接垫，该第一修补接垫电性连接该些第一接垫的其中一者，且该第二修补接垫电性连接该些第二接垫的其中一者。
5.如权利要求3所述的显示面板，还包括：
一平坦层，覆盖该像素阵列基板和各该些垂直式发光元件的一侧壁，并暴露出该些第二接垫和该些修补接垫组，其中该导电线路延伸于该平坦层上，以电性连接该些第二接垫的其中一者和该些垂直式发光元件的其中一者。
6.如权利要求2所述的显示面板，其中该些垂直式发光元件包括位于该第二像素区的一第一垂直式发光元件和一第二垂直式发光元件，该第一垂直式发光元件和该第二垂直式发光元件各自的发光颜色不同于该覆晶式发光元件的发光颜色，与该覆晶式发光元件电性接合的该修补接垫组电性连接至位于该第二像素区的该些第一接垫的一者，且前述的第一接垫的一者未与该些垂直式发光元件的任一者电性连接。
7.如权利要求1所述的显示面板，其中各该些垂直式发光元件经由一焊料图案与该像素阵列基板电性接合，且该焊料图案为多个金属层的堆叠结构。
8.如权利要求7所述的显示面板，其中该些金属层包括按序设置在各该些垂直式发光元件上的一第一金属层、一第二金属层、一第三金属层和一第四金属层，该第一金属层的材料包括钛、铬、铂或上述材料的组合，该第二金属层的材料包括镍、铜、钯、或上述材料的组合，该第三金属层的材料包括金、银、铜、钯、镍、或上述材料的组合，该第四金属层的材料包括锡、铟、铋、锡铋混合金属、锡铟混合金属、锡铜混合金属、锡银混合金属、锡锑混合金属、锡锌混合金属、锡银铜混合金属、锡银铜铋混合金属、或上述材料的组合。
9.如权利要求7所述的显示面板，其中该些金属层中接触该像素阵列基板的一者的熔点低于摄氏260度。
10.如权利要求1所述的显示面板，其中该些垂直式发光元件包括位于该第二像素区的一第一垂直式发光元件、一第二垂直式发光元件和一第三垂直式发光元件，该第一垂直式发光元件、该第二垂直式发光元件和该第三垂直式发光元件的其中一者的发光颜色与该覆晶式发光元件的发光颜色相同。
11.如权利要求1所述的显示面板，还包括：
一吸光层，设置在该些垂直式发光元件与该覆晶式发光元件之间，该吸光层相对于该像素阵列基板的位置低于该些垂直式发光元件与该覆晶式发光元件相对于该像素阵列基板的位置。
12.如权利要求1所述的显示面板，还包括：
一光学膜层，覆盖该些垂直式发光元件和该覆晶式发光元件。
13.一种显示面板，包括：
一像素阵列基板，具有多个像素区以及设置在各该些像素区内的一第一接垫、一第一修补接垫和一第二修补接垫，该第一接垫电性连接该第一修补接垫；
一垂直式发光元件，电性接合于该些像素区的其中一者内的该第一接垫；以及
一覆晶式发光元件，电性接合于该些像素区的其中该者内的该第一修补接垫和该第二修补接垫，其中该覆晶式发光元件的发光颜色与该垂直式发光元件的发光颜色相同。
14.如权利要求13所述的显示面板，其中该像素阵列基板在各该些像素区还设有一第二接垫，位于同一该像素区内的该第二接垫与该第二修补接垫电性连接，且该垂直式发光元件经由一导电线路与该些像素区的其中该者内的该第二接垫电性连接。
15.如权利要求14所述的显示面板，还包括：
一平坦层，覆盖该像素阵列基板和该垂直式发光元件的一侧壁，并暴露出该第一修补接垫和该第二修补接垫，其中该导电线路延伸于该平坦层上，以电性连接位于同一该像素区内的该第二接垫和该垂直式发光元件。
16.如权利要求13所述的显示面板，其中该垂直式发光元件经由一焊料图案与该像素阵列基板电性接合，该焊料图案为多个金属层的堆叠结构，且该些金属层中接触该第一接垫的一者的熔点低于摄氏260度。
17.如权利要求13所述的显示面板，还包括：
一吸光层，设置在该垂直式发光元件与该覆晶式发光元件各自的周围，该吸光层相对于该像素阵列基板的位置低于该些垂直式发光元件与该覆晶式发光元件相对于该像素阵列基板的位置。
18.如权利要求13所述的显示面板，还包括：
一光学膜层，覆盖该垂直式发光元件和该覆晶式发光元件。
CN202210350437.2A 2021-10-12 2022-04-02 显示面板 Pending CN114613801A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW110137797A TWI800945B (zh) 2021-10-12 2021-10-12 顯示面板
TW110137797 2021-10-12

Publications (1)

Publication Number Publication Date
CN114613801A true CN114613801A (zh) 2022-06-10

Family

ID=81867318

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210350437.2A Pending CN114613801A (zh) 2021-10-12 2022-04-02 显示面板

Country Status (3)

Country Link
US (1) US20230112531A1 (zh)
CN (1) CN114613801A (zh)
TW (1) TWI800945B (zh)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202032226A (zh) * 2020-01-14 2020-09-01 友達光電股份有限公司 軟性電路結構
CN111524928B (zh) * 2020-04-30 2022-08-23 厦门天马微电子有限公司 一种显示面板及显示装置

Also Published As

Publication number Publication date
US20230112531A1 (en) 2023-04-13
TW202316402A (zh) 2023-04-16
TWI800945B (zh) 2023-05-01

Similar Documents

Publication Publication Date Title
JP5597362B2 (ja) 発光素子、発光素子を含む発光装置、発光素子の製造方法および発光素子を含む発光装置の製造方法
CN213782016U (zh) 显示装置
CN110634905A (zh) 具有发光二极管阵列的显示器及其制造方法
CN213845301U (zh) 显示用发光元件以及具有该显示用发光元件的单元像素
CN211605176U (zh) 发光芯片
CN211789018U (zh) 显示面板及具有该显示面板的显示装置
TWI827613B (zh) 具有發光二極體陣列之顯示器及其製造方法
CN213601872U (zh) 显示器装置、单元像素及像素模块
CN212934611U (zh) 显示装置
CN213071131U (zh) 显示器用发光元件及发光封装件
KR102570676B1 (ko) 반도체 발광소자를 제조하는 방법
US12113151B2 (en) Unit pixel having light emitting device and displaying apparatus
CN212934617U (zh) 发光元件及显示装置
KR20210155801A (ko) Led 패키지 및 그 제조방법
KR102437637B1 (ko) 반도체 발광소자를 제조하는 방법
CN114613801A (zh) 显示面板
KR20210155802A (ko) Led 칩 패키지 및 그 제조방법
KR102403425B1 (ko) 마이크로 엘이디 디스플레이를 제조하는 방법
KR102301877B1 (ko) 반도체 발광소자
KR102712126B1 (ko) 마이크로디스플레이 패널 제조 방법
CN217955861U (zh) 单元像素及具有该单元像素的显示装置
CN211088273U (zh) 显示器用发光元件以及具有该发光元件的显示装置
CN214625074U (zh) 单元像素及具有该单元像素的显示装置
CN211654819U (zh) 显示器用发光元件以及具有该发光元件的显示装置
US20240113150A1 (en) Light emitting device and light emitting module having the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination