JP7211540B2 - 配線基板及びその製造方法 - Google Patents

配線基板及びその製造方法 Download PDF

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Publication number
JP7211540B2
JP7211540B2 JP2021569704A JP2021569704A JP7211540B2 JP 7211540 B2 JP7211540 B2 JP 7211540B2 JP 2021569704 A JP2021569704 A JP 2021569704A JP 2021569704 A JP2021569704 A JP 2021569704A JP 7211540 B2 JP7211540 B2 JP 7211540B2
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Prior art keywords
conductor
silicon substrate
hole
outer conductor
central
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Japanese (ja)
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JPWO2021140664A5 (https=
JPWO2021140664A1 (https=
Inventor
秀 渡辺
教徳 西
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NEC Corp
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NEC Corp
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Priority to JP2023000961A priority Critical patent/JP7424520B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/209—Vertical interconnections, e.g. vias
    • H10W44/212—Coaxial feed-throughs in substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2021569704A 2020-01-10 2020-01-10 配線基板及びその製造方法 Active JP7211540B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023000961A JP7424520B2 (ja) 2020-01-10 2023-01-06 配線基板及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/000733 WO2021140664A1 (ja) 2020-01-10 2020-01-10 配線基板及びその製造方法

Related Child Applications (1)

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JP2023000961A Division JP7424520B2 (ja) 2020-01-10 2023-01-06 配線基板及びその製造方法

Publications (3)

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JPWO2021140664A1 JPWO2021140664A1 (https=) 2021-07-15
JPWO2021140664A5 JPWO2021140664A5 (https=) 2022-08-09
JP7211540B2 true JP7211540B2 (ja) 2023-01-24

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JP2021569704A Active JP7211540B2 (ja) 2020-01-10 2020-01-10 配線基板及びその製造方法
JP2023000961A Active JP7424520B2 (ja) 2020-01-10 2023-01-06 配線基板及びその製造方法

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JP2023000961A Active JP7424520B2 (ja) 2020-01-10 2023-01-06 配線基板及びその製造方法

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Country Link
US (1) US20230034867A1 (https=)
JP (2) JP7211540B2 (https=)
WO (1) WO2021140664A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4227862A4 (en) * 2020-12-31 2024-04-24 Origin Quantum Computing Technology (Hefei) Co., Ltd Superconducting quantum chip structure and superconducting quantum chip preparation method
US20230262906A1 (en) * 2022-02-11 2023-08-17 Alibaba (China) Co., Ltd. Substrate, chip, circuit package and fabrication process
CN116261392B (zh) * 2023-01-17 2024-09-20 深圳量旋科技有限公司 超导量子芯片及其基底、及基底的制作方法
CN115955906B (zh) * 2023-01-20 2025-05-30 深圳量旋科技有限公司 超导量子芯片及其基底、及基底的制作方法
US20250098549A1 (en) * 2023-09-15 2025-03-20 Imec Vzw Fabrication of Through-Silicon Vias
TWI889233B (zh) * 2024-03-11 2025-07-01 欣興電子股份有限公司 電路板裝置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334956A (ja) 2001-05-09 2002-11-22 Fujitsu Ltd 半導体装置の支持体及びその製造方法
US20100295066A1 (en) 2005-08-11 2010-11-25 Christian Drabe Semiconductor substrate and methods for the production thereof
CN103311141A (zh) 2013-07-05 2013-09-18 北京理工大学 一种同轴垂直互连导电体的制作方法
CN106158835A (zh) 2016-07-08 2016-11-23 西安理工大学 一种基于硅通孔技术的低通滤波器
CN109461699A (zh) 2018-10-22 2019-03-12 中国电子科技集团公司第三十八研究所 一种同轴tsv结构转接板及其制作方法
US20190273197A1 (en) 2016-12-27 2019-09-05 Intel Corporation Superconducting qubit device packages

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4192035B2 (ja) * 2003-05-27 2008-12-03 大日本印刷株式会社 配線基板の製造方法
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法
US20110241185A1 (en) * 2010-04-05 2011-10-06 International Business Machines Corporation Signal shielding through-substrate vias for 3d integration
US9079761B2 (en) * 2013-03-14 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device and method of forming the same related cases
JP2016066770A (ja) * 2014-09-25 2016-04-28 京セラサーキットソリューションズ株式会社 配線基板およびその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334956A (ja) 2001-05-09 2002-11-22 Fujitsu Ltd 半導体装置の支持体及びその製造方法
US20100295066A1 (en) 2005-08-11 2010-11-25 Christian Drabe Semiconductor substrate and methods for the production thereof
CN103311141A (zh) 2013-07-05 2013-09-18 北京理工大学 一种同轴垂直互连导电体的制作方法
CN106158835A (zh) 2016-07-08 2016-11-23 西安理工大学 一种基于硅通孔技术的低通滤波器
US20190273197A1 (en) 2016-12-27 2019-09-05 Intel Corporation Superconducting qubit device packages
CN109461699A (zh) 2018-10-22 2019-03-12 中国电子科技集团公司第三十八研究所 一种同轴tsv结构转接板及其制作方法

Also Published As

Publication number Publication date
JP2023038236A (ja) 2023-03-16
US20230034867A1 (en) 2023-02-02
JPWO2021140664A1 (https=) 2021-07-15
JP7424520B2 (ja) 2024-01-30
WO2021140664A1 (ja) 2021-07-15

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