JPWO2021140664A1 - - Google Patents

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Publication number
JPWO2021140664A1
JPWO2021140664A1 JP2021569704A JP2021569704A JPWO2021140664A1 JP WO2021140664 A1 JPWO2021140664 A1 JP WO2021140664A1 JP 2021569704 A JP2021569704 A JP 2021569704A JP 2021569704 A JP2021569704 A JP 2021569704A JP WO2021140664 A1 JPWO2021140664 A1 JP WO2021140664A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021569704A
Other languages
Japanese (ja)
Other versions
JPWO2021140664A5 (https=
JP7211540B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021140664A1 publication Critical patent/JPWO2021140664A1/ja
Publication of JPWO2021140664A5 publication Critical patent/JPWO2021140664A5/ja
Priority to JP2023000961A priority Critical patent/JP7424520B2/ja
Application granted granted Critical
Publication of JP7211540B2 publication Critical patent/JP7211540B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/095—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers of vias therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63—Vias, e.g. via plugs
    • H10W70/635—Through-vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/209—Vertical interconnections, e.g. vias
    • H10W44/212—Coaxial feed-throughs in substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2021569704A 2020-01-10 2020-01-10 配線基板及びその製造方法 Active JP7211540B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023000961A JP7424520B2 (ja) 2020-01-10 2023-01-06 配線基板及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/000733 WO2021140664A1 (ja) 2020-01-10 2020-01-10 配線基板及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023000961A Division JP7424520B2 (ja) 2020-01-10 2023-01-06 配線基板及びその製造方法

Publications (3)

Publication Number Publication Date
JPWO2021140664A1 true JPWO2021140664A1 (https=) 2021-07-15
JPWO2021140664A5 JPWO2021140664A5 (https=) 2022-08-09
JP7211540B2 JP7211540B2 (ja) 2023-01-24

Family

ID=76787807

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021569704A Active JP7211540B2 (ja) 2020-01-10 2020-01-10 配線基板及びその製造方法
JP2023000961A Active JP7424520B2 (ja) 2020-01-10 2023-01-06 配線基板及びその製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023000961A Active JP7424520B2 (ja) 2020-01-10 2023-01-06 配線基板及びその製造方法

Country Status (3)

Country Link
US (1) US20230034867A1 (https=)
JP (2) JP7211540B2 (https=)
WO (1) WO2021140664A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4227862A4 (en) * 2020-12-31 2024-04-24 Origin Quantum Computing Technology (Hefei) Co., Ltd Superconducting quantum chip structure and superconducting quantum chip preparation method
US20230262906A1 (en) * 2022-02-11 2023-08-17 Alibaba (China) Co., Ltd. Substrate, chip, circuit package and fabrication process
CN116261392B (zh) * 2023-01-17 2024-09-20 深圳量旋科技有限公司 超导量子芯片及其基底、及基底的制作方法
CN115955906B (zh) * 2023-01-20 2025-05-30 深圳量旋科技有限公司 超导量子芯片及其基底、及基底的制作方法
US20250098549A1 (en) * 2023-09-15 2025-03-20 Imec Vzw Fabrication of Through-Silicon Vias
TWI889233B (zh) * 2024-03-11 2025-07-01 欣興電子股份有限公司 電路板裝置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334956A (ja) * 2001-05-09 2002-11-22 Fujitsu Ltd 半導体装置の支持体及びその製造方法
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法
US20100295066A1 (en) * 2005-08-11 2010-11-25 Christian Drabe Semiconductor substrate and methods for the production thereof
CN103311141A (zh) * 2013-07-05 2013-09-18 北京理工大学 一种同轴垂直互连导电体的制作方法
CN106158835A (zh) * 2016-07-08 2016-11-23 西安理工大学 一种基于硅通孔技术的低通滤波器
CN109461699A (zh) * 2018-10-22 2019-03-12 中国电子科技集团公司第三十八研究所 一种同轴tsv结构转接板及其制作方法
US20190273197A1 (en) * 2016-12-27 2019-09-05 Intel Corporation Superconducting qubit device packages

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4192035B2 (ja) * 2003-05-27 2008-12-03 大日本印刷株式会社 配線基板の製造方法
US20110241185A1 (en) * 2010-04-05 2011-10-06 International Business Machines Corporation Signal shielding through-substrate vias for 3d integration
US9079761B2 (en) * 2013-03-14 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device and method of forming the same related cases
JP2016066770A (ja) * 2014-09-25 2016-04-28 京セラサーキットソリューションズ株式会社 配線基板およびその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334956A (ja) * 2001-05-09 2002-11-22 Fujitsu Ltd 半導体装置の支持体及びその製造方法
JP2006019455A (ja) * 2004-06-30 2006-01-19 Nec Electronics Corp 半導体装置およびその製造方法
US20100295066A1 (en) * 2005-08-11 2010-11-25 Christian Drabe Semiconductor substrate and methods for the production thereof
CN103311141A (zh) * 2013-07-05 2013-09-18 北京理工大学 一种同轴垂直互连导电体的制作方法
CN106158835A (zh) * 2016-07-08 2016-11-23 西安理工大学 一种基于硅通孔技术的低通滤波器
US20190273197A1 (en) * 2016-12-27 2019-09-05 Intel Corporation Superconducting qubit device packages
CN109461699A (zh) * 2018-10-22 2019-03-12 中国电子科技集团公司第三十八研究所 一种同轴tsv结构转接板及其制作方法

Also Published As

Publication number Publication date
JP2023038236A (ja) 2023-03-16
JP7211540B2 (ja) 2023-01-24
US20230034867A1 (en) 2023-02-02
JP7424520B2 (ja) 2024-01-30
WO2021140664A1 (ja) 2021-07-15

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