JP7210956B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7210956B2
JP7210956B2 JP2018173307A JP2018173307A JP7210956B2 JP 7210956 B2 JP7210956 B2 JP 7210956B2 JP 2018173307 A JP2018173307 A JP 2018173307A JP 2018173307 A JP2018173307 A JP 2018173307A JP 7210956 B2 JP7210956 B2 JP 7210956B2
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semiconductor substrate
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gate trench
trench portion
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Japanese (ja)
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JP2019106529A5 (enExample
JP2019106529A (ja
Inventor
達也 内藤
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Priority to US16/207,193 priority Critical patent/US10847617B2/en
Publication of JP2019106529A publication Critical patent/JP2019106529A/ja
Priority to US16/951,661 priority patent/US11342416B2/en
Publication of JP2019106529A5 publication Critical patent/JP2019106529A5/ja
Priority to US17/744,717 priority patent/US11810952B2/en
Priority to JP2023003334A priority patent/JP7533641B2/ja
Application granted granted Critical
Publication of JP7210956B2 publication Critical patent/JP7210956B2/ja
Priority to US18/471,282 priority patent/US12224319B2/en
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2018173307A 2017-12-14 2018-09-18 半導体装置 Active JP7210956B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US16/207,193 US10847617B2 (en) 2017-12-14 2018-12-03 Semiconductor device
US16/951,661 US11342416B2 (en) 2017-12-14 2020-11-18 Semiconductor device
US17/744,717 US11810952B2 (en) 2017-12-14 2022-05-15 Semiconductor device
JP2023003334A JP7533641B2 (ja) 2017-12-14 2023-01-12 半導体装置
US18/471,282 US12224319B2 (en) 2017-12-14 2023-09-20 Semiconductor device

Applications Claiming Priority (2)

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JP2017240022 2017-12-14
JP2017240022 2017-12-14

Related Child Applications (1)

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JP2023003334A Division JP7533641B2 (ja) 2017-12-14 2023-01-12 半導体装置

Publications (3)

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JP2019106529A JP2019106529A (ja) 2019-06-27
JP2019106529A5 JP2019106529A5 (enExample) 2020-11-26
JP7210956B2 true JP7210956B2 (ja) 2023-01-24

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JP2018173307A Active JP7210956B2 (ja) 2017-12-14 2018-09-18 半導体装置

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JP (1) JP7210956B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7246287B2 (ja) * 2019-09-13 2023-03-27 株式会社東芝 半導体装置およびその製造方法
CN114981980A (zh) * 2020-08-24 2022-08-30 富士电机株式会社 半导体装置及半导体装置的制造方法
JPWO2025033084A1 (enExample) * 2023-08-07 2025-02-13

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116822A (ja) 2003-10-08 2005-04-28 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2007311627A (ja) 2006-05-19 2007-11-29 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2008227238A (ja) 2007-03-14 2008-09-25 Toyota Central R&D Labs Inc 半導体装置
JP2016523454A (ja) 2013-07-03 2016-08-08 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ フィールドプレート・トレンチ・ｆｅｔ、及び、半導体構成素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116822A (ja) 2003-10-08 2005-04-28 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2007311627A (ja) 2006-05-19 2007-11-29 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2008227238A (ja) 2007-03-14 2008-09-25 Toyota Central R&D Labs Inc 半導体装置
JP2016523454A (ja) 2013-07-03 2016-08-08 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ フィールドプレート・トレンチ・ｆｅｔ、及び、半導体構成素子

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