JP7195480B2 - 高周波増幅器、無線通信装置及びレーダ装置 - Google Patents

高周波増幅器、無線通信装置及びレーダ装置 Download PDF

Info

Publication number
JP7195480B2
JP7195480B2 JP2022511484A JP2022511484A JP7195480B2 JP 7195480 B2 JP7195480 B2 JP 7195480B2 JP 2022511484 A JP2022511484 A JP 2022511484A JP 2022511484 A JP2022511484 A JP 2022511484A JP 7195480 B2 JP7195480 B2 JP 7195480B2
Authority
JP
Japan
Prior art keywords
gate
fingers
source
transistor
finger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022511484A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021199431A1 (https=
Inventor
純 神岡
真太郎 新庄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2021199431A1 publication Critical patent/JPWO2021199431A1/ja
Application granted granted Critical
Publication of JP7195480B2 publication Critical patent/JP7195480B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/212—Top-view shapes or dispositions, e.g. top-view layouts of the vias
    • H10W20/2125—Top-view shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/483—Interconnections over air gaps, e.g. air bridges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2022511484A 2020-04-03 2020-04-03 高周波増幅器、無線通信装置及びレーダ装置 Active JP7195480B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/015343 WO2021199431A1 (ja) 2020-04-03 2020-04-03 高周波増幅器、無線通信装置及びレーダ装置

Publications (2)

Publication Number Publication Date
JPWO2021199431A1 JPWO2021199431A1 (https=) 2021-10-07
JP7195480B2 true JP7195480B2 (ja) 2022-12-23

Family

ID=77927770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022511484A Active JP7195480B2 (ja) 2020-04-03 2020-04-03 高周波増幅器、無線通信装置及びレーダ装置

Country Status (4)

Country Link
US (1) US12456954B2 (https=)
EP (1) EP4113832B1 (https=)
JP (1) JP7195480B2 (https=)
WO (1) WO2021199431A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023049404A (ja) * 2021-09-29 2023-04-10 住友電工デバイス・イノベーション株式会社 半導体装置
EP4343831A1 (en) * 2022-09-25 2024-03-27 Wolfspeed, Inc. Field effect transistor with integrated series capacitance
US12599008B2 (en) * 2023-04-06 2026-04-07 Nxp Usa, Inc. Transistor with source manifold in non-active die region

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014073091A1 (ja) 2012-11-09 2014-05-15 三菱電機株式会社 カスコードアンプ
JP2015192205A (ja) 2014-03-27 2015-11-02 三菱電機株式会社 カスコード増幅器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3925417B2 (ja) 2003-01-29 2007-06-06 富士通株式会社 分布型増幅器実装装置
JP4821214B2 (ja) * 2005-08-26 2011-11-24 三菱電機株式会社 カスコード接続回路
JP7302925B2 (ja) * 2018-08-29 2023-07-04 住友電工デバイス・イノベーション株式会社 高周波増幅器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014073091A1 (ja) 2012-11-09 2014-05-15 三菱電機株式会社 カスコードアンプ
JP2015192205A (ja) 2014-03-27 2015-11-02 三菱電機株式会社 カスコード増幅器

Also Published As

Publication number Publication date
JPWO2021199431A1 (https=) 2021-10-07
EP4113832A4 (en) 2023-08-02
US20220385246A1 (en) 2022-12-01
EP4113832A1 (en) 2023-01-04
EP4113832B1 (en) 2025-04-23
US12456954B2 (en) 2025-10-28
WO2021199431A1 (ja) 2021-10-07

Similar Documents

Publication Publication Date Title
US9543914B2 (en) Doherty amplifier structure
US7804361B2 (en) Low noise amplifier
JP4206589B2 (ja) 分布増幅器
US11296656B2 (en) Power amplifier module
JP7195480B2 (ja) 高周波増幅器、無線通信装置及びレーダ装置
US12341479B2 (en) Power amplifying circuit
JPWO2019097609A1 (ja) ドハティ増幅器及びドハティ増幅回路
CN110661497A (zh) 高频放大电路以及半导体装置
JP5267407B2 (ja) 増幅回路及び通信装置
Kim et al. A 97–107 GHz Triple-Stacked-FET Power Amplifier with 23.7 dB Peak Gain, 15.1 dBm P SAT, and 18.6% PAE MAX in 28-nm FD-SOI CMOS
US7187231B2 (en) Apparatus, methods and articles of manufacture for multiband signal processing
US11342891B2 (en) Amplifier circuit
EP3337035A1 (en) Inter-stage network for radio frequency amplifier
WO2020166196A1 (ja) 双方向増幅器
US7405626B2 (en) Distributed amplifier having a variable terminal resistance
US20250274082A1 (en) Power amplifier circuit
US9647615B2 (en) Broadband amplifier
US20220103129A1 (en) Impedance control in merged stacked fet amplifiers
JP5161856B2 (ja) バイアス回路
WO2022249380A1 (ja) ドハティ増幅器
US11387786B2 (en) Amplifier
JP2008236354A (ja) 増幅器
JP7311678B1 (ja) 可変利得増幅器
JP6317245B2 (ja) 分布増幅器と分布ミキサ
JP5484206B2 (ja) 差動増幅回路

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220307

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20220307

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220621

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220808

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221115

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221213

R150 Certificate of patent or registration of utility model

Ref document number: 7195480

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250