JP7190080B2 - 多層接合型光電変換素子およびその製造方法 - Google Patents

多層接合型光電変換素子およびその製造方法 Download PDF

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JP7190080B2
JP7190080B2 JP2022527241A JP2022527241A JP7190080B2 JP 7190080 B2 JP7190080 B2 JP 7190080B2 JP 2022527241 A JP2022527241 A JP 2022527241A JP 2022527241 A JP2022527241 A JP 2022527241A JP 7190080 B2 JP7190080 B2 JP 7190080B2
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layer
electrode
photoactive
photoelectric conversion
silicon
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JPWO2022080196A5 (https=
JPWO2022080196A1 (https=
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武志 五反田
智博 戸張
穣 齊田
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Toshiba Corp
Toshiba Energy Systems and Solutions Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0036—Formation of the solid electrolyte layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/209—Light trapping arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/15—Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
JP2022527241A 2020-10-16 2021-10-06 多層接合型光電変換素子およびその製造方法 Active JP7190080B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2020/039069 2020-10-16
PCT/JP2020/039069 WO2022079887A1 (ja) 2020-10-16 2020-10-16 多層接合型光電変換素子およびその製造方法
PCT/JP2021/036896 WO2022080196A1 (ja) 2020-10-16 2021-10-06 多層接合型光電変換素子およびその製造方法

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JPWO2022080196A1 JPWO2022080196A1 (https=) 2022-04-21
JPWO2022080196A5 JPWO2022080196A5 (https=) 2022-10-05
JP7190080B2 true JP7190080B2 (ja) 2022-12-14

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US (1) US20230317377A1 (https=)
JP (1) JP7190080B2 (https=)
CN (1) CN116548083A (https=)
DE (1) DE112021005470T5 (https=)
WO (2) WO2022079887A1 (https=)

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JP7114821B1 (ja) 2022-03-18 2022-08-08 株式会社東芝 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法
CN117673209B (zh) 2024-02-01 2024-07-09 天合光能股份有限公司 太阳能电池及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010527146A (ja) 2007-05-07 2010-08-05 ジョージア テック リサーチ コーポレイション スクリーン印刷された局所裏面電界を伴う高品質裏面コンタクトの形成
US20130255765A1 (en) 2012-03-30 2013-10-03 Applied Materials, Inc. Doped ai paste for local alloyed junction formation with low contact resistance
US20140273338A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Methods of forming solar cells and solar cell modules
JP2018011058A (ja) 2016-07-13 2018-01-18 エルジー エレクトロニクス インコーポレイティド タンデム太陽電池、これを含むタンデム太陽電池モジュール及びこの製造方法
JP2018092982A (ja) 2016-11-30 2018-06-14 三菱電機株式会社 太陽電池の製造方法
US10290432B1 (en) 2018-02-13 2019-05-14 Nano And Advanced Materials Institute Limited Method for forming perovskite solar cell with printable carbon electrode
CN110676385A (zh) 2019-09-19 2020-01-10 北京化工大学 一种基于多功能界面修饰层的碳基钙钛矿太阳能电池
JP2020508570A (ja) 2017-02-20 2020-03-19 オックスフォード フォトボルテイクス リミテッド 多接合光起電デバイス

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010527146A (ja) 2007-05-07 2010-08-05 ジョージア テック リサーチ コーポレイション スクリーン印刷された局所裏面電界を伴う高品質裏面コンタクトの形成
US20130255765A1 (en) 2012-03-30 2013-10-03 Applied Materials, Inc. Doped ai paste for local alloyed junction formation with low contact resistance
US20140273338A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Methods of forming solar cells and solar cell modules
JP2018011058A (ja) 2016-07-13 2018-01-18 エルジー エレクトロニクス インコーポレイティド タンデム太陽電池、これを含むタンデム太陽電池モジュール及びこの製造方法
JP2018092982A (ja) 2016-11-30 2018-06-14 三菱電機株式会社 太陽電池の製造方法
JP2020508570A (ja) 2017-02-20 2020-03-19 オックスフォード フォトボルテイクス リミテッド 多接合光起電デバイス
US10290432B1 (en) 2018-02-13 2019-05-14 Nano And Advanced Materials Institute Limited Method for forming perovskite solar cell with printable carbon electrode
CN110676385A (zh) 2019-09-19 2020-01-10 北京化工大学 一种基于多功能界面修饰层的碳基钙钛矿太阳能电池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LI, Hui and ZHANG, Wei，Perovskite Tandem Solar Cells: From Fundamentals to Commercial Deployment，CHEMICAL REVIEWS，2020年08月07日，Vol. 120, No. 18，pp. 9835-9950，DOI: 10.1021/acs.chemrev.9b00780

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CN116548083A (zh) 2023-08-04
DE112021005470T5 (de) 2023-07-27
WO2022079887A1 (ja) 2022-04-21
US20230317377A1 (en) 2023-10-05
JPWO2022080196A1 (https=) 2022-04-21
WO2022080196A1 (ja) 2022-04-21

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