CN116548083A - 多层接合型光电转换元件及其制造方法 - Google Patents

多层接合型光电转换元件及其制造方法 Download PDF

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Publication number
CN116548083A
CN116548083A CN202180070473.7A CN202180070473A CN116548083A CN 116548083 A CN116548083 A CN 116548083A CN 202180070473 A CN202180070473 A CN 202180070473A CN 116548083 A CN116548083 A CN 116548083A
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CN
China
Prior art keywords
layer
electrode
photoelectric conversion
photoactive
conversion element
Prior art date
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Pending
Application number
CN202180070473.7A
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English (en)
Chinese (zh)
Inventor
五反田武志
户张智博
齐田穣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Energy Systems and Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Energy Systems and Solutions Corp
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Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Energy Systems and Solutions Corp filed Critical Toshiba Corp
Publication of CN116548083A publication Critical patent/CN116548083A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H01G9/0036—Formation of the solid electrolyte layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2072—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/209—Light trapping arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/15—Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
CN202180070473.7A 2020-10-16 2021-10-06 多层接合型光电转换元件及其制造方法 Pending CN116548083A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2020/039069 2020-10-16
PCT/JP2020/039069 WO2022079887A1 (ja) 2020-10-16 2020-10-16 多層接合型光電変換素子およびその製造方法
PCT/JP2021/036896 WO2022080196A1 (ja) 2020-10-16 2021-10-06 多層接合型光電変換素子およびその製造方法

Publications (1)

Publication Number Publication Date
CN116548083A true CN116548083A (zh) 2023-08-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180070473.7A Pending CN116548083A (zh) 2020-10-16 2021-10-06 多层接合型光电转换元件及其制造方法

Country Status (5)

Country Link
US (1) US20230317377A1 (https=)
JP (1) JP7190080B2 (https=)
CN (1) CN116548083A (https=)
DE (1) DE112021005470T5 (https=)
WO (2) WO2022079887A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114821B1 (ja) 2022-03-18 2022-08-08 株式会社東芝 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法
CN117673209B (zh) 2024-02-01 2024-07-09 天合光能股份有限公司 太阳能电池及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE486370T1 (de) * 2007-05-07 2010-11-15 Georgia Tech Res Inst Herstellung eines hochwertigen rückseitigen kontakts mit lokaler rückseitiger siebdruckfläche
WO2013148047A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Doped ai paste for local alloyed junction formation with low contact resistance
US9040409B2 (en) * 2013-03-15 2015-05-26 Applied Materials, Inc. Methods of forming solar cells and solar cell modules
KR20180007585A (ko) * 2016-07-13 2018-01-23 엘지전자 주식회사 텐덤 태양전지, 이를 포함하는 텐덤 태양전지 모듈 및 이의 제조방법
JP2018092982A (ja) * 2016-11-30 2018-06-14 三菱電機株式会社 太陽電池の製造方法
GB2559800B (en) * 2017-02-20 2019-06-12 Oxford Photovoltaics Ltd Multijunction photovoltaic device
US10290432B1 (en) * 2018-02-13 2019-05-14 Nano And Advanced Materials Institute Limited Method for forming perovskite solar cell with printable carbon electrode
CN110676385A (zh) * 2019-09-19 2020-01-10 北京化工大学 一种基于多功能界面修饰层的碳基钙钛矿太阳能电池

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Publication number Publication date
JP7190080B2 (ja) 2022-12-14
DE112021005470T5 (de) 2023-07-27
WO2022079887A1 (ja) 2022-04-21
US20230317377A1 (en) 2023-10-05
JPWO2022080196A1 (https=) 2022-04-21
WO2022080196A1 (ja) 2022-04-21

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