JPWO2022080196A1 - - Google Patents

Info

Publication number
JPWO2022080196A1
JPWO2022080196A1 JP2022527241A JP2022527241A JPWO2022080196A1 JP WO2022080196 A1 JPWO2022080196 A1 JP WO2022080196A1 JP 2022527241 A JP2022527241 A JP 2022527241A JP 2022527241 A JP2022527241 A JP 2022527241A JP WO2022080196 A1 JPWO2022080196 A1 JP WO2022080196A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022527241A
Other languages
Japanese (ja)
Other versions
JPWO2022080196A5 (https=
JP7190080B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022080196A1 publication Critical patent/JPWO2022080196A1/ja
Publication of JPWO2022080196A5 publication Critical patent/JPWO2022080196A5/ja
Application granted granted Critical
Publication of JP7190080B2 publication Critical patent/JP7190080B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029Processes of manufacture
    • H01G9/0036Formation of the solid electrolyte layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2004Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009Solid electrolytes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2068Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2072Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells comprising two or more photoelectrodes sensible to different parts of the solar spectrum, e.g. tandem cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/209Light trapping arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/10Organic photovoltaic [PV] modules; Arrays of single organic PV cells
    • H10K39/15Organic photovoltaic [PV] modules; Arrays of single organic PV cells comprising both organic PV cells and inorganic PV cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/84Layers having high charge carrier mobility
    • H10K30/85Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/84Layers having high charge carrier mobility
    • H10K30/86Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
JP2022527241A 2020-10-16 2021-10-06 多層接合型光電変換素子およびその製造方法 Active JP7190080B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2020/039069 2020-10-16
PCT/JP2020/039069 WO2022079887A1 (ja) 2020-10-16 2020-10-16 多層接合型光電変換素子およびその製造方法
PCT/JP2021/036896 WO2022080196A1 (ja) 2020-10-16 2021-10-06 多層接合型光電変換素子およびその製造方法

Publications (3)

Publication Number Publication Date
JPWO2022080196A1 true JPWO2022080196A1 (https=) 2022-04-21
JPWO2022080196A5 JPWO2022080196A5 (https=) 2022-10-05
JP7190080B2 JP7190080B2 (ja) 2022-12-14

Family

ID=81208023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022527241A Active JP7190080B2 (ja) 2020-10-16 2021-10-06 多層接合型光電変換素子およびその製造方法

Country Status (5)

Country Link
US (1) US20230317377A1 (https=)
JP (1) JP7190080B2 (https=)
CN (1) CN116548083A (https=)
DE (1) DE112021005470T5 (https=)
WO (2) WO2022079887A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114821B1 (ja) 2022-03-18 2022-08-08 株式会社東芝 多層接合型光電変換素子及び多層接合型光電変換素子の製造方法
CN117673209B (zh) 2024-02-01 2024-07-09 天合光能股份有限公司 太阳能电池及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010527146A (ja) * 2007-05-07 2010-08-05 ジョージア テック リサーチ コーポレイション スクリーン印刷された局所裏面電界を伴う高品質裏面コンタクトの形成
US20130255765A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Doped ai paste for local alloyed junction formation with low contact resistance
US20140273338A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Methods of forming solar cells and solar cell modules
JP2018011058A (ja) * 2016-07-13 2018-01-18 エルジー エレクトロニクス インコーポレイティド タンデム太陽電池、これを含むタンデム太陽電池モジュール及びこの製造方法
JP2018092982A (ja) * 2016-11-30 2018-06-14 三菱電機株式会社 太陽電池の製造方法
US10290432B1 (en) * 2018-02-13 2019-05-14 Nano And Advanced Materials Institute Limited Method for forming perovskite solar cell with printable carbon electrode
CN110676385A (zh) * 2019-09-19 2020-01-10 北京化工大学 一种基于多功能界面修饰层的碳基钙钛矿太阳能电池
JP2020508570A (ja) * 2017-02-20 2020-03-19 オックスフォード フォトボルテイクス リミテッド 多接合光起電デバイス

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010527146A (ja) * 2007-05-07 2010-08-05 ジョージア テック リサーチ コーポレイション スクリーン印刷された局所裏面電界を伴う高品質裏面コンタクトの形成
US20130255765A1 (en) * 2012-03-30 2013-10-03 Applied Materials, Inc. Doped ai paste for local alloyed junction formation with low contact resistance
US20140273338A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Methods of forming solar cells and solar cell modules
JP2018011058A (ja) * 2016-07-13 2018-01-18 エルジー エレクトロニクス インコーポレイティド タンデム太陽電池、これを含むタンデム太陽電池モジュール及びこの製造方法
JP2018092982A (ja) * 2016-11-30 2018-06-14 三菱電機株式会社 太陽電池の製造方法
JP2020508570A (ja) * 2017-02-20 2020-03-19 オックスフォード フォトボルテイクス リミテッド 多接合光起電デバイス
US10290432B1 (en) * 2018-02-13 2019-05-14 Nano And Advanced Materials Institute Limited Method for forming perovskite solar cell with printable carbon electrode
CN110676385A (zh) * 2019-09-19 2020-01-10 北京化工大学 一种基于多功能界面修饰层的碳基钙钛矿太阳能电池

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
LI, HUI AND ZHANG, WEI: "Perovskite Tandem Solar Cells: From Fundamentals to Commercial Deployment", CHEMICAL REVIEWS, vol. 120, no. 18, JPN6020048173, 7 August 2020 (2020-08-07), pages 9835 - 9950, ISSN: 0004842555 *

Also Published As

Publication number Publication date
CN116548083A (zh) 2023-08-04
JP7190080B2 (ja) 2022-12-14
DE112021005470T5 (de) 2023-07-27
WO2022079887A1 (ja) 2022-04-21
US20230317377A1 (en) 2023-10-05
WO2022080196A1 (ja) 2022-04-21

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021015500A2 (https=)
BR102021007058A2 (https=)
BR102020022030A2 (https=)
BR112023016292A2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220607

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220607

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20220607

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220802

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221003

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221104

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221202

R150 Certificate of patent or registration of utility model

Ref document number: 7190080

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150