JP7185181B2 - 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 - Google Patents

半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 Download PDF

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Publication number
JP7185181B2
JP7185181B2 JP2018189156A JP2018189156A JP7185181B2 JP 7185181 B2 JP7185181 B2 JP 7185181B2 JP 2018189156 A JP2018189156 A JP 2018189156A JP 2018189156 A JP2018189156 A JP 2018189156A JP 7185181 B2 JP7185181 B2 JP 7185181B2
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Japan
Prior art keywords
glass
semiconductor
coating
semiconductor device
semiconductor element
Prior art date
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Active
Application number
JP2018189156A
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English (en)
Japanese (ja)
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JP2020055724A (ja
Inventor
将行 廣瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
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Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP2018189156A priority Critical patent/JP7185181B2/ja
Priority to PCT/JP2019/036160 priority patent/WO2020071093A1/ja
Priority to CN201980051203.4A priority patent/CN112512982B/zh
Priority to TW108135463A priority patent/TWI819109B/zh
Publication of JP2020055724A publication Critical patent/JP2020055724A/ja
Application granted granted Critical
Publication of JP7185181B2 publication Critical patent/JP7185181B2/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP2018189156A 2018-10-04 2018-10-04 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料 Active JP7185181B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018189156A JP7185181B2 (ja) 2018-10-04 2018-10-04 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料
PCT/JP2019/036160 WO2020071093A1 (ja) 2018-10-04 2019-09-13 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料
CN201980051203.4A CN112512982B (zh) 2018-10-04 2019-09-13 半导体元件被覆用玻璃以及使用其的半导体被覆用材料
TW108135463A TWI819109B (zh) 2018-10-04 2019-10-01 半導體元件被覆用玻璃及使用此的半導體被覆用材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018189156A JP7185181B2 (ja) 2018-10-04 2018-10-04 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料

Publications (2)

Publication Number Publication Date
JP2020055724A JP2020055724A (ja) 2020-04-09
JP7185181B2 true JP7185181B2 (ja) 2022-12-07

Family

ID=70055866

Family Applications (1)

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JP2018189156A Active JP7185181B2 (ja) 2018-10-04 2018-10-04 半導体素子被覆用ガラス及びこれを用いた半導体被覆用材料

Country Status (4)

Country Link
JP (1) JP7185181B2 (zh)
CN (1) CN112512982B (zh)
TW (1) TWI819109B (zh)
WO (1) WO2020071093A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220319942A1 (en) * 2019-09-24 2022-10-06 Nippon Electric Glass Co., Ltd. Glass for covering semiconductor element and material for covering semiconductor element using same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4319215A (en) 1979-07-13 1982-03-09 Hitachi, Ltd. Non-linear resistor and process for producing same
WO2012160704A1 (ja) 2011-05-26 2012-11-29 新電元工業株式会社 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置
WO2013168236A1 (ja) 2012-05-08 2013-11-14 新電元工業株式会社 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55113641A (en) * 1979-02-22 1980-09-02 Asahi Glass Co Ltd Insulating glass composition
US5216207A (en) * 1991-02-27 1993-06-01 David Sarnoff Research Center, Inc. Low temperature co-fired multilayer ceramic circuit boards with silver conductors
JPH08188446A (ja) * 1995-01-11 1996-07-23 Sumitomo Metal Mining Co Ltd ガラスセラミック基板
JP2004039355A (ja) * 2002-07-02 2004-02-05 Sumitomo Metal Mining Co Ltd 導電性組成物
WO2009119433A1 (ja) * 2008-03-25 2009-10-01 日本山村硝子株式会社 無鉛ガラス及び無鉛ガラスセラミックス用組成物
WO2011013776A1 (ja) * 2009-07-31 2011-02-03 旭硝子株式会社 半導体デバイス用封着ガラス、封着材料、封着材料ペースト、および半導体デバイスとその製造方法
WO2013114562A1 (ja) * 2012-01-31 2013-08-08 新電元工業株式会社 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置
JP6064298B2 (ja) * 2011-08-25 2017-01-25 日本電気硝子株式会社 半導体素子被覆用ガラス

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4319215A (en) 1979-07-13 1982-03-09 Hitachi, Ltd. Non-linear resistor and process for producing same
WO2012160704A1 (ja) 2011-05-26 2012-11-29 新電元工業株式会社 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置
WO2013168236A1 (ja) 2012-05-08 2013-11-14 新電元工業株式会社 樹脂封止型半導体装置及び樹脂封止型半導体装置の製造方法

Also Published As

Publication number Publication date
CN112512982A (zh) 2021-03-16
JP2020055724A (ja) 2020-04-09
TWI819109B (zh) 2023-10-21
CN112512982B (zh) 2023-02-24
TW202028143A (zh) 2020-08-01
WO2020071093A1 (ja) 2020-04-09

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