JP7172878B2 - 単結晶シリコンの抵抗率測定方法 - Google Patents

単結晶シリコンの抵抗率測定方法 Download PDF

Info

Publication number
JP7172878B2
JP7172878B2 JP2019118631A JP2019118631A JP7172878B2 JP 7172878 B2 JP7172878 B2 JP 7172878B2 JP 2019118631 A JP2019118631 A JP 2019118631A JP 2019118631 A JP2019118631 A JP 2019118631A JP 7172878 B2 JP7172878 B2 JP 7172878B2
Authority
JP
Japan
Prior art keywords
resistivity
sample piece
sample
wafer
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019118631A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021005626A (ja
Inventor
善博 大城
勝則 栗山
禎之 鈴木
喬之 北山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2019118631A priority Critical patent/JP7172878B2/ja
Priority to TW109118943A priority patent/TWI737339B/zh
Publication of JP2021005626A publication Critical patent/JP2021005626A/ja
Application granted granted Critical
Publication of JP7172878B2 publication Critical patent/JP7172878B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2019118631A 2019-06-26 2019-06-26 単結晶シリコンの抵抗率測定方法 Active JP7172878B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019118631A JP7172878B2 (ja) 2019-06-26 2019-06-26 単結晶シリコンの抵抗率測定方法
TW109118943A TWI737339B (zh) 2019-06-26 2020-06-05 單結晶矽的電阻率測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019118631A JP7172878B2 (ja) 2019-06-26 2019-06-26 単結晶シリコンの抵抗率測定方法

Publications (2)

Publication Number Publication Date
JP2021005626A JP2021005626A (ja) 2021-01-14
JP7172878B2 true JP7172878B2 (ja) 2022-11-16

Family

ID=74098240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019118631A Active JP7172878B2 (ja) 2019-06-26 2019-06-26 単結晶シリコンの抵抗率測定方法

Country Status (2)

Country Link
JP (1) JP7172878B2 (zh)
TW (1) TWI737339B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115290974A (zh) * 2022-07-21 2022-11-04 扬州方通电子材料科技有限公司 一种单晶硅棒电阻率的测量方法及装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001001335A (ja) 1999-06-22 2001-01-09 Toshiba Ceramics Co Ltd ワイヤーソーを用いた単結晶シリコンインゴットのスライス方法
JP2002050554A (ja) 2000-07-31 2002-02-15 Shin Etsu Handotai Co Ltd 検査用ウェーハ、その作製方法及びその作製装置
JP2002110491A (ja) 2000-09-28 2002-04-12 Shin Etsu Handotai Co Ltd 検査用ウェーハ及び検査サンプルの作製方法及び作製装置
JP2010225695A (ja) 2009-03-19 2010-10-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 拡散ウェーハの製造方法
JP2011077413A (ja) 2009-09-30 2011-04-14 Noritake Co Ltd シリコンウェハーの製造方法
JP2018093086A (ja) 2016-12-05 2018-06-14 株式会社Sumco シリコンウェーハの製造方法
JP2019079924A (ja) 2017-10-24 2019-05-23 株式会社Sumco 検査治具及びこれを用いたシリコンウェーハの欠陥検査方法
JP2019089676A (ja) 2017-11-16 2019-06-13 株式会社Sumco シリコン単結晶の評価方法およびシリコンウェーハの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778412B2 (ja) * 1999-10-15 2006-05-24 信越半導体株式会社 検査用ウェーハ、その作成方法、及びそれを用いた検査方法
JP2015026755A (ja) * 2013-07-29 2015-02-05 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの抵抗率測定方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001001335A (ja) 1999-06-22 2001-01-09 Toshiba Ceramics Co Ltd ワイヤーソーを用いた単結晶シリコンインゴットのスライス方法
JP2002050554A (ja) 2000-07-31 2002-02-15 Shin Etsu Handotai Co Ltd 検査用ウェーハ、その作製方法及びその作製装置
JP2002110491A (ja) 2000-09-28 2002-04-12 Shin Etsu Handotai Co Ltd 検査用ウェーハ及び検査サンプルの作製方法及び作製装置
JP2010225695A (ja) 2009-03-19 2010-10-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 拡散ウェーハの製造方法
JP2011077413A (ja) 2009-09-30 2011-04-14 Noritake Co Ltd シリコンウェハーの製造方法
JP2018093086A (ja) 2016-12-05 2018-06-14 株式会社Sumco シリコンウェーハの製造方法
JP2019079924A (ja) 2017-10-24 2019-05-23 株式会社Sumco 検査治具及びこれを用いたシリコンウェーハの欠陥検査方法
JP2019089676A (ja) 2017-11-16 2019-06-13 株式会社Sumco シリコン単結晶の評価方法およびシリコンウェーハの製造方法

Also Published As

Publication number Publication date
TWI737339B (zh) 2021-08-21
JP2021005626A (ja) 2021-01-14
TW202117108A (zh) 2021-05-01

Similar Documents

Publication Publication Date Title
CN110079862B (zh) 碳化硅单晶衬底、碳化硅外延衬底及它们的制造方法
KR101994782B1 (ko) 경면연마 웨이퍼의 제조방법
US20100009521A1 (en) Method of producing semiconductor wafer
JP2011003773A (ja) シリコンウェーハの製造方法
US10395933B2 (en) Method for manufacturing semiconductor wafer
JP6493253B2 (ja) シリコンウェーハの製造方法およびシリコンウェーハ
JP7172878B2 (ja) 単結晶シリコンの抵抗率測定方法
KR102454449B1 (ko) 웨이퍼의 제조방법
KR102165589B1 (ko) 실리콘 웨이퍼 연마 방법, 실리콘 웨이퍼 제조 방법 및 실리콘 웨이퍼
JP6260603B2 (ja) 炭化珪素単結晶基板、炭化珪素エピタキシャル基板およびこれらの製造方法
US6211088B1 (en) Manufacturing method for semiconductor gas-phase epitaxial wafer
JP6471686B2 (ja) シリコンウェーハの面取り方法、シリコンウェーハの製造方法およびシリコンウェーハ
KR20200094976A (ko) 웨이퍼의 평가 방법
JP7230746B2 (ja) 単結晶シリコンの酸素濃度又は炭素濃度の測定方法
KR100918076B1 (ko) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
KR100201705B1 (ko) 경면 연마 웨이퍼 제조방법
KR102508209B1 (ko) 실리콘 에피택셜 웨이퍼의 제조 방법 및 실리콘 에피택셜 웨이퍼
KR102508213B1 (ko) 실리콘 에피택셜 웨이퍼의 제조 방법 및 실리콘 에피택셜 웨이퍼
JP2003203890A (ja) シリコンウェーハの製造方法
US20090311808A1 (en) Method for producing semiconductor wafer
KR20030053084A (ko) 실리콘 웨이퍼의 제조방법
KR20070094407A (ko) 웨이퍼의 제조방법

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210816

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220609

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220705

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220824

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20221004

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221017

R150 Certificate of patent or registration of utility model

Ref document number: 7172878

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150