JP7172639B2 - 線状部材及びその製造方法 - Google Patents
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
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- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/443—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from vinylhalogenides or other halogenoethylenic compounds
- H01B3/445—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from vinylhalogenides or other halogenoethylenic compounds from vinylfluorides or other fluoroethylenic compounds
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
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Description
(線状部材の構造)
図1は、第1の実施の形態に係る線状部材としてのケーブル1の断面図である。ケーブル1は、導体10と、導体10の周囲を被覆する線状の絶縁体11と、絶縁体11の表面(外周面)を直接被覆するシールド12と、を備える。ケーブル1の直径は、例えば、0.7~1.3mmである。
絶縁体11は、フッ素樹脂からなる。フッ素樹脂としては、具体的には、ポリテトラフルオロエチレン(PTFE)、パーフロロアルコキシ(PFA)、パーフルオロエチレンプロペンコポリマー(FEP)、エチレン・テトラフルオロエチレンコポリマー(ETFE)、テトラフルオロエチレン-パーフルオロジオキソールコポリマー(TFE/PDD)、ポリフッ化ビニリデン(PVDF)、ポリクロロトリフルオロエチレン(PCTFE)、エチレン-クロロトリフロオロエチレンコポリマー(ECTFE)、ポリフッ化ビニル(PVF)などを用いることができる。
以下、本実施の形態に係るケーブル1の製造方法の一例について説明する。
電解めっき液162としての、硫酸銅めっき液の組成の例を表1に示す。表1中の「塩化ナトリウム、塩酸」は、塩化物の一例である。
電解めっき液162としての、シアン化銅めっき液の組成の例を表2に示す。表2中の「遊離シアン化ナトリウム(遊離シアン化カリウム)」は、シアン化銅と反応せずに浴中に残存したシアン化アルカリである。
上記実施の形態に係るケーブル1によれば、絶縁体11への表面処理として、フッ素樹脂に対して効果的な粗化処理を実施することにより、フッ素樹脂からなる絶縁体11とめっき層からなるシールド12との密着性を向上させ、めっき層の絶縁体からの剥離や、めっき層と絶縁体との間の空隙の形成による伝送特性の低下を抑制することができる。
次に、以上説明した実施の形態から把握される技術思想について、実施の形態における符号等を援用して記載する。ただし、以下の記載における各符号等は、特許請求の範囲における構成要素を実施の形態に具体的に示した部材等に限定するものではない。
2 チューブ
3 導電性繊維
10 導体
11 絶縁体
12 シールド
21 絶縁体
22 めっき層
Claims (7)
- 表面に複数のクラック状の溝を有する、フッ素樹脂からなる線状の絶縁体と、
前記絶縁体の表面を被覆するめっき層と、
を備え、
前記絶縁体は、前記絶縁体の表面の算術平均粗さRaが40nm以上と、二乗平均粗さRmsが80nm以上の、少なくともいずれか一方の条件を満たし、かつ、前記絶縁体の表面の赤外全反射吸収スペクトルにおいて、カルボキシ基に帰属する吸収ピークの積分値をフッ素樹脂のC-F収縮振動に帰属する吸収ピークの積分値で規格化した値が0.02以上である、
線状部材。 - フッ素樹脂からなる線状の絶縁体の表面に粗化処理を施す工程と、
前記粗化処理の後、前記絶縁体の表面にめっき処理を施してめっき層を形成する工程と、
を含み、
前記粗化処理が、ナトリウムナフタレン錯体溶液への浸漬処理であり、前記浸漬処理が、20℃~30℃で行われる、
線状部材の製造方法。 - 前記粗化処理後の前記絶縁体の表面の状態が、算術平均粗さRaが40nm以上と、二乗平均粗さRmsが80nm以上の、少なくともいずれかの条件を満たす、
請求項2に記載の線状部材の製造方法。 - 前記絶縁体の表面の算術平均粗さRaが前記粗化処理により前記粗化処理前の1.7倍以上に増加するという条件と、前記絶縁体の表面の二乗平均粗さRmsが前記粗化処理により前記粗化処理前の2倍以上に増加するという条件の、少なくともいずれか一方を満たす、
請求項2または3に記載の線状部材の製造方法。 - フッ素樹脂からなる線状の絶縁体の表面に親水化処理を施す工程と、
前記親水化処理の後、前記絶縁体の表面にめっき処理を施してめっき層を形成する工程と、
を含み、
前記親水化処理が、ナトリウムナフタレン錯体溶液への浸漬処理であり、前記浸漬処理が、20℃~30℃で行われ、
前記親水化処理後の前記絶縁体の表面の赤外全反射吸収スペクトルにおいて、カルボキシ基に帰属する吸収ピークの積分値をフッ素樹脂のC-F収縮振動に帰属する吸収ピークの積分値で規格化した値が0.02以上である、
線状部材の製造方法。 - 前記親水化処理により、前記絶縁体の表面のカルボキシ基の量が前記親水化処理前の6倍以上になる、
請求項5に記載の線状部材の製造方法。 - フッ素樹脂からなる線状の絶縁体と、
前記絶縁体の表面を被覆するめっき層と、
を備え、
前記絶縁体は、前記絶縁体の表面にヒドロキシ基が存在し、かつ、前記絶縁体の表面の赤外全反射吸収スペクトルにおいて、カルボキシ基に帰属する吸収ピークの積分値をフッ素樹脂のC-F収縮振動に帰属する吸収ピークの積分値で規格化した値が0.02以上である、
線状部材。
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US16/740,102 US11164684B2 (en) | 2019-01-22 | 2020-01-10 | Linear shape member and producing method therefor |
CN202010038909.1A CN111462945B (zh) | 2019-01-22 | 2020-01-14 | 线状构件及其制造方法 |
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JP2005149892A (ja) | 2003-11-14 | 2005-06-09 | Ube Nitto Kasei Co Ltd | 金属メッキによるシールド導体を有する細径同軸ケーブルおよびその製造方法 |
JP2006066512A (ja) | 2004-08-25 | 2006-03-09 | Olympus Corp | 医療器具用の電磁シールド成形品の製造方法とその電磁シールド成形品とその製造装置 |
JP6245402B1 (ja) | 2017-07-04 | 2017-12-13 | 日立金属株式会社 | 差動信号伝送用ケーブル、多芯ケーブル、及び差動信号伝送用ケーブルの製造方法 |
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US4314737A (en) * | 1979-06-14 | 1982-02-09 | Virginia Patent Development Corp. | Cable assembly having shielded conductor and method of making same |
JP2987556B2 (ja) * | 1995-10-14 | 1999-12-06 | 東京特殊電線株式会社 | 弗素樹脂体表面の金属導電層形成方法 |
JP6328944B2 (ja) * | 2013-02-13 | 2018-05-23 | 大成建設株式会社 | ドライアイスブラスト装置 |
JP6959774B2 (ja) * | 2017-07-04 | 2021-11-05 | 日立金属株式会社 | 信号伝送用ケーブル 多芯ケーブル、及び信号伝送用ケーブルの製造方法 |
JP7195735B2 (ja) * | 2017-12-18 | 2022-12-26 | 日立金属株式会社 | 信号伝送用ケーブル |
JP7211104B2 (ja) * | 2019-01-24 | 2023-01-24 | 日立金属株式会社 | 線状部材及びその製造方法 |
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JP2005149892A (ja) | 2003-11-14 | 2005-06-09 | Ube Nitto Kasei Co Ltd | 金属メッキによるシールド導体を有する細径同軸ケーブルおよびその製造方法 |
JP2006066512A (ja) | 2004-08-25 | 2006-03-09 | Olympus Corp | 医療器具用の電磁シールド成形品の製造方法とその電磁シールド成形品とその製造装置 |
JP6245402B1 (ja) | 2017-07-04 | 2017-12-13 | 日立金属株式会社 | 差動信号伝送用ケーブル、多芯ケーブル、及び差動信号伝送用ケーブルの製造方法 |
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CN111462945B (zh) | 2024-04-19 |
US20200234847A1 (en) | 2020-07-23 |
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