JP7166917B2 - Memsデバイスの構造パラメータを操作する為のmemsグリッド - Google Patents
Memsデバイスの構造パラメータを操作する為のmemsグリッド Download PDFInfo
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Description
本出願は、参照によって全内容が本明細書に組み込まれている、2015年9月30日に出願された米国特許出願第14/872,123号、件名「MEMSデバイスの構造パラメータを操作する為のMEMSグリッド(MEMS Grid for Manipulating Structural Parameters of MEMS Devices)」の利益を主張するものである。
〔付記1〕
MEMSデバイスの構造特性を制御するシステムであって、
1つ以上の構造を含むMEMSデバイスと、
前記MEMSデバイス上に堆積されたMEMSグリッドであって、前記MEMSデバイスの表面にエッチングされた複数の穴を含む前記MEMSグリッドと、
を含み、
前記MEMSグリッドは、前記MEMSデバイスの構造特性を変化させるように構成可能である、
システム。
〔付記2〕
前記複数の穴は第1の形状及び第2の形状を含み、前記第1の形状及び前記第2の形状は、前記MEMSデバイスの構造の所望の構造特性に基づいて決定される、付記1に記載のシステム。
〔付記3〕
第1の形状を有する1つ以上の穴の中に配置される吸収材を更に含む、付記2に記載のシステム。
〔付記4〕
第2の形状を有する1つ以上の穴の中に配置される吸収材を更に含む、付記2に記載のシステム。
〔付記5〕
前記第1の形状及び前記第2の形状は、円、正方形、三角形、ハニカム、スロット、長方形、多角形のうちのいずれかである、付記2に記載のシステム。
〔付記6〕
前記複数の穴は更に第3の形状を含む、付記2に記載のシステム。
〔付記7〕
前記複数の穴の方位は、所与の方位の構造衝撃に基づいて決定される、付記1に記載のシステム。
〔付記8〕
前記複数の穴のうちの1つ以上の穴の中に配置される吸収材を更に含む、付記1に記載のシステム。
〔付記9〕
特定の構造特性を有するMEMSデバイスを製造する方法であって、
MEMSデバイスの構造要件を識別するステップと、
前記識別された構造要件を実現することが可能な幾何学的パターンを決定するステップと、
前記決定された幾何学的パターンに従って前記MEMSデバイスに複数の穴をエッチングするステップと、
を含む方法。
〔付記10〕
前記複数の穴のうちの1つ以上を吸収材で埋めるステップを更に含む、付記9に記載の方法。
〔付記11〕
前記幾何学的パターンは1つ以上の幾何学的形状を含んでよく、前記幾何学的形状は、正方形、三角形、円、ハニカム、長方形、スロットのうちの1つ以上を含む、付記9に記載の方法。
〔付記12〕
制御可能な構造特性を有するMEMSデバイスを製造する方法であって、
MEMSデバイスの1つ以上の構造の構造要件を識別するステップと、
第1の幾何学的パターンを決定するステップと、
第2の幾何学的パターンを決定するステップと、
MEMSデバイスに複数の穴をエッチングするステップであって、前記複数の穴のうちの第1のサブセットが前記第1の幾何学的パターンに対応し、前記複数の穴のうちの第2のサブセットが前記第2の幾何学的パターンに対応する、前記エッチングするステップと、
を含む方法。
〔付記13〕
前記複数の穴のうちの前記第1のサブセットを吸収材で埋めるステップを更に含む、付記12に記載の方法。
〔付記14〕
前記複数の穴のうちの前記第2のサブセットを吸収材で埋めるステップを更に含む、付記12に記載の方法。
〔付記15〕
前記第1の幾何学的パターンは、正方形、三角形、円、ハニカム、長方形、及びスロットのうちの1つ以上を含む、付記12に記載の方法。
〔付記16〕
前記第2の幾何学的パターンは、正方形、三角形、円、ハニカム、長方形、及びスロットのうちの1つ以上を含む、付記12に記載の方法。
〔付記17〕
第3の幾何学的パターンを決定するステップを更に含み、前記複数の穴のうちの第3のサブセットが前記第3の幾何学的パターンに対応する、付記12に記載の方法。
〔付記18〕
MEMSデバイスに複数の配線層を作成する方法であって、
トレンチレイアウトを決定するステップであって、前記トレンチレイアウトは複数の穴配置領域を画定する1つ以上の幾何学的パターンを含む、前記決定するステップと、
1つ以上のアンカトレンチの場所を識別するステップであって、アンカトレンチは、前記トレンチレイアウトの一部分の画定された穴配置領域の中に堆積された2次トレンチであり、前記場所を識別する前記ステップは、前記画定された穴配置領域の中で、前記アンカトレンチと前記トレンチレイアウトとの間の基板材料部分が酸化するのに十分な小ささである位置を決定するステップを含む、前記場所を識別する前記ステップと、
前記トレンチレイアウトを基板ウエハにエッチングして複数のトレンチを作成するステップと、
前記1つ以上のアンカトレンチを前記基板ウエハにエッチングするステップと、
前記基板ウエハの表面に基層を成長させるステップであって、前記基板ウエハの前記表面は、前記基板ウエハの最上部表面と、前記複数のトレンチ及び前記1つ以上のアンカトレンチの内面及び底面とを含む、前記成長させるステップと、
前記複数のトレンチ及び前記1つ以上のアンカトレンチの中に第1の導電材料層を堆積させるステップと、
前記トレンチレイアウトの、前記穴配置領域を画定している部分に対応する、前記複数のトレンチの一部に絶縁層を堆積させるステップと、
前記絶縁層の最上部に第2の導電材料層を堆積させるステップであって、前記第2の導電材料層が前記絶縁層及び前記1つ以上のアンカトレンチを覆うように堆積させる前記ステップと、
を含む方法。
〔付記19〕
前記複数の穴配置領域を通して前記基板ウエハをエッチングして、前記複数の穴配置領域によって包含された基板材料を除去することにより、結果としてMEMSデバイスに複数の穴を設けるステップを更に含む、付記18に記載の方法。
〔付記20〕
前記複数の穴配置領域は1つ以上の幾何学的形状を含む、付記18に記載の方法。
〔付記21〕
前記1つ以上のアンカトレンチは内側穴配置領域を画定し、内側穴配置領域は、前記対応するアンカトレンチが配置される前記穴配置領域と同じ幾何学的形状を含む、付記20に記載の方法。
〔付記22〕
前記複数のトレンチのいずれかと前記第2の導電層との間のブリッジ接続を更に含む、付記18に記載の方法。
〔付記23〕
前記アンカトレンチと前記複数のトレンチの前記一部との間の前記基板材料が前記絶縁層によって覆われるように、前記絶縁層が堆積される、付記18に記載の方法。
Claims (7)
- MEMSデバイスの構造特性を制御するシステムであって、
1つ以上の構造及びMEMSアクチュエータを含むMEMSデバイスと、
前記MEMSアクチュエータ上に堆積されたMEMSグリッドであって、前記MEMSアクチュエータの表面にエッチングされた複数の穴を含む前記MEMSグリッドと、
を含み、
前記MEMSグリッドの剛性を含む前記MEMSデバイスの構造特性が、前記MEMSアクチュエータの表面にエッチングされた前記MEMSグリッドに含まれる前記複数の穴の形状及び方位のうちの少なくとも1つに依存しており、前記複数の穴は、第1の形状及び第2の形状を含み、前記第1の形状及び前記第2の形状は、前記MEMSデバイスにおける1つ以上の構造の所望の構造特性に基づいて決定され、前記第1の形状は、前記MEMSアクチュエータのフレクシャ上に配置され、前記第2の形状は、前記MEMSアクチュエータの内側フレーム上に配置される、
システム。 - 前記第1の形状を有する前記複数の穴の中に配置される吸収材を更に含む、請求項1に記載のシステム。
- 前記第2の形状を有する前記複数の穴の中に配置される吸収材を更に含む、請求項1に記載のシステム。
- 前記第1の形状及び前記第2の形状は、円、正方形、三角形、ハニカム、スロット、長方形、多角形のうちのいずれかである、請求項1に記載のシステム。
- 前記複数の穴は更に第3の形状を含む、請求項1に記載のシステム。
- 前記複数の穴の方位は、前記MEMSデバイスにおける1つ以上の構造の所望の構造特性に基づいて決定される、請求項1に記載のシステム。
- 前記複数の穴のうちの1つ以上の穴の中に配置される吸収材を更に含む、請求項1に記載のシステム。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022171146A JP2023015129A (ja) | 2015-09-30 | 2022-10-26 | Memsデバイスの構造パラメータを操作する為のmemsグリッド |
JP2022171145A JP2023017817A (ja) | 2015-09-30 | 2022-10-26 | Memsデバイスの構造パラメータを操作する為のmemsグリッド |
JP2022171147A JP7519420B2 (ja) | 2015-09-30 | 2022-10-26 | Memsデバイスの構造パラメータを操作する為のmemsグリッド |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/872,123 US9617142B1 (en) | 2015-09-30 | 2015-09-30 | MEMS grid for manipulating structural parameters of MEMS devices |
US14/872,123 | 2015-09-30 | ||
PCT/US2016/054416 WO2017059056A1 (en) | 2015-09-30 | 2016-09-29 | Mems grid for manipulating structural parameters of mems devices |
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US9630836B2 (en) | 2015-09-30 | 2017-04-25 | Mems Drive, Inc. | Simplified MEMS device fabrication process |
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US10504821B2 (en) * | 2016-01-29 | 2019-12-10 | United Microelectronics Corp. | Through-silicon via structure |
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US9617142B1 (en) | 2017-04-11 |
JP2023015129A (ja) | 2023-01-31 |
US20170320724A1 (en) | 2017-11-09 |
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US10199262B2 (en) | 2019-02-05 |
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US20170170059A1 (en) | 2017-06-15 |
EP3356288A4 (en) | 2019-12-25 |
EP3356288A1 (en) | 2018-08-08 |
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US10043704B2 (en) | 2018-08-07 |
JP2023017817A (ja) | 2023-02-07 |
KR20180059537A (ko) | 2018-06-04 |
JP7519420B2 (ja) | 2024-07-19 |
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WO2017059056A1 (en) | 2017-04-06 |
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