JP7151907B2 - キャパシタおよびその製造方法 - Google Patents
キャパシタおよびその製造方法 Download PDFInfo
- Publication number
- JP7151907B2 JP7151907B2 JP2021548315A JP2021548315A JP7151907B2 JP 7151907 B2 JP7151907 B2 JP 7151907B2 JP 2021548315 A JP2021548315 A JP 2021548315A JP 2021548315 A JP2021548315 A JP 2021548315A JP 7151907 B2 JP7151907 B2 JP 7151907B2
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- JP
- Japan
- Prior art keywords
- conductive
- columnar portions
- dielectric layer
- capacitor
- support portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000003990 capacitor Substances 0.000 title claims description 199
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000000853 adhesive Substances 0.000 claims description 58
- 230000001070 adhesive effect Effects 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 239000002041 carbon nanotube Substances 0.000 claims description 25
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 25
- 239000002105 nanoparticle Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000004020 conductor Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 19
- 238000000576 coating method Methods 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 239000003054 catalyst Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002134 carbon nanofiber Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000002048 multi walled nanotube Substances 0.000 description 2
- 239000002121 nanofiber Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- OEPOKWHJYJXUGD-UHFFFAOYSA-N 2-(3-phenylmethoxyphenyl)-1,3-thiazole-4-carbaldehyde Chemical compound O=CC1=CSC(C=2C=C(OCC=3C=CC=CC=3)C=CC=2)=N1 OEPOKWHJYJXUGD-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052595 hematite Inorganic materials 0.000 description 1
- 239000011019 hematite Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019174347 | 2019-09-25 | ||
| JP2019174347 | 2019-09-25 | ||
| PCT/JP2020/016272 WO2021059569A1 (ja) | 2019-09-25 | 2020-04-13 | キャパシタおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021059569A1 JPWO2021059569A1 (https=) | 2021-04-01 |
| JP7151907B2 true JP7151907B2 (ja) | 2022-10-12 |
Family
ID=75166937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021548315A Active JP7151907B2 (ja) | 2019-09-25 | 2020-04-13 | キャパシタおよびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11749463B2 (https=) |
| JP (1) | JP7151907B2 (https=) |
| WO (1) | WO2021059569A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7151907B2 (ja) * | 2019-09-25 | 2022-10-12 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
| CN120019459A (zh) * | 2022-11-01 | 2025-05-16 | 株式会社村田制作所 | 电容器 |
| US12581667B2 (en) | 2022-12-30 | 2026-03-17 | International Business Machines Corporation | Multistack metal-insulator-metal (MIM) structure using spacer formation process for heterogeneous integration with discrete capacitors |
| US20250006780A1 (en) * | 2023-06-30 | 2025-01-02 | International Business Machines Corporation | Extremely high density silicon capacitor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234254A (ja) | 2002-02-07 | 2003-08-22 | Hitachi Zosen Corp | カーボンナノチューブを用いた電気二重層キャパシタ |
| JP2005129566A (ja) | 2003-10-21 | 2005-05-19 | Toyota Motor Corp | キャパシタ |
| JP2008193096A (ja) | 2007-02-06 | 2008-08-21 | Young Joo Oh | 金属キャパシタ及びその製造方法 |
| JP2015514315A (ja) | 2012-03-22 | 2015-05-18 | カリフォルニア インスティチュート オブ テクノロジー | 細長体を有する導電性素子のアレイを具えるマイクロ・ナノスケールキャパシタ |
| JP2015519742A (ja) | 2012-05-03 | 2015-07-09 | ダイソン テクノロジー リミテッド | ハイブリッドキャパシタ |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1538640B1 (en) * | 2003-12-05 | 2016-11-16 | NGK Spark Plug Co., Ltd. | Capacitor and method for manufacturing the same |
| JP5091242B2 (ja) | 2006-10-04 | 2012-12-05 | エヌエックスピー ビー ヴィ | Mimキャパシタ |
| JP4357577B2 (ja) * | 2007-06-14 | 2009-11-04 | 太陽誘電株式会社 | コンデンサ及びその製造方法 |
| JP5931594B2 (ja) * | 2012-06-07 | 2016-06-08 | 太陽誘電株式会社 | コンデンサ |
| US9119289B2 (en) * | 2013-02-25 | 2015-08-25 | 3M Innovative Properties Company | Film constructions for interdigitated electrodes with bus bars and methods of making same |
| WO2021059570A1 (ja) * | 2019-09-25 | 2021-04-01 | 株式会社村田製作所 | ナノ構造集合体およびその製造方法 |
| JP7151907B2 (ja) * | 2019-09-25 | 2022-10-12 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
| JP7248143B2 (ja) * | 2019-10-24 | 2023-03-29 | 株式会社村田製作所 | 複合キャパシタ |
| CN114600209B (zh) * | 2019-10-24 | 2024-07-23 | 株式会社村田制作所 | 复合电容器 |
| US11715594B2 (en) * | 2021-05-27 | 2023-08-01 | International Business Machines Corporation | Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch |
-
2020
- 2020-04-13 JP JP2021548315A patent/JP7151907B2/ja active Active
- 2020-04-13 WO PCT/JP2020/016272 patent/WO2021059569A1/ja not_active Ceased
-
2022
- 2022-03-03 US US17/653,392 patent/US11749463B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003234254A (ja) | 2002-02-07 | 2003-08-22 | Hitachi Zosen Corp | カーボンナノチューブを用いた電気二重層キャパシタ |
| JP2005129566A (ja) | 2003-10-21 | 2005-05-19 | Toyota Motor Corp | キャパシタ |
| JP2008193096A (ja) | 2007-02-06 | 2008-08-21 | Young Joo Oh | 金属キャパシタ及びその製造方法 |
| JP2015514315A (ja) | 2012-03-22 | 2015-05-18 | カリフォルニア インスティチュート オブ テクノロジー | 細長体を有する導電性素子のアレイを具えるマイクロ・ナノスケールキャパシタ |
| JP2015519742A (ja) | 2012-05-03 | 2015-07-09 | ダイソン テクノロジー リミテッド | ハイブリッドキャパシタ |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021059569A1 (ja) | 2021-04-01 |
| US20220189702A1 (en) | 2022-06-16 |
| US11749463B2 (en) | 2023-09-05 |
| JPWO2021059569A1 (https=) | 2021-04-01 |
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