WO2021059569A1 - キャパシタおよびその製造方法 - Google Patents

キャパシタおよびその製造方法 Download PDF

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Publication number
WO2021059569A1
WO2021059569A1 PCT/JP2020/016272 JP2020016272W WO2021059569A1 WO 2021059569 A1 WO2021059569 A1 WO 2021059569A1 JP 2020016272 W JP2020016272 W JP 2020016272W WO 2021059569 A1 WO2021059569 A1 WO 2021059569A1
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Prior art keywords
columnar portions
conductive
support portion
conductive columnar
capacitor
Prior art date
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PCT/JP2020/016272
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English (en)
French (fr)
Japanese (ja)
Inventor
清水 康弘
真己 永田
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to JP2021548315A priority Critical patent/JP7151907B2/ja
Publication of WO2021059569A1 publication Critical patent/WO2021059569A1/ja
Priority to US17/653,392 priority patent/US11749463B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/33Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/005Electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/38Multiple capacitors, i.e. structural combinations of fixed capacitors

Definitions

  • the present invention relates to a capacitor and a method for manufacturing the same.
  • Patent Documents that disclose the configuration of the capacitor include Japanese Patent Application Laid-Open No. 2005-129566 (Patent Document 1) and Japanese Patent Application Laid-Open No. 5091242 (Patent Document 2).
  • the capacitor described in Patent Document 1 includes a positive electrode, a negative electrode, carbon nanotubes provided at each electrode of the positive electrode and the negative electrode, and a polyfoot filled between the carbon nanotubes between the positive electrode and the negative electrode. It is equipped with vinylidene (PVDF dielectric).
  • PVDF dielectric vinylidene
  • the positive and negative electrodes face each other.
  • the carbon nanotubes provided on one of the positive electrode and the negative electrode are interposed between the carbon nanotubes provided on the other.
  • the capacitor described in Patent Document 2 is a 3D MIM capacitor, and includes a lower plate and an upper plate.
  • the lower plate is formed of a layer of conductive material.
  • the top plate is also formed of a layer of conductive material.
  • Each of the upper plate and the lower plate is separated by an insulating layer made of a high dielectric constant material. These layers coat the surface on which a large number of nanofibers are growing.
  • the capacitor described in Patent Document 1 In order to improve the withstand voltage of a capacitor having a conductive columnar portion having a nano-sized outer diameter such as carbon nanotube or nanofiber, for example, the capacitor described in Patent Document 1, two capacitors that are the same as each other are laminated. It is conceivable to form a composite capacitor by allowing the capacitor to be formed. However, the volume of the composite capacitor is doubled and the capacitance is halved with respect to one capacitor before stacking. That is, the composite capacitor as described above has a volume capacity density that is one-fourth that of one capacitor before stacking.
  • the present invention has been made in view of the above problems, and in a capacitor having a plurality of conductive columnar portions having a nano-sized outer diameter, it is possible to improve the withstand voltage while suppressing a decrease in volume capacity density, and also to improve efficiency.
  • An object of the present invention is to provide a capacitor that can be manufactured easily and easily.
  • the capacitor based on the present invention includes a first support portion, a second support portion, a plurality of first conductive columnar portions, a first dielectric layer, a plurality of second conductive columnar portions, and a second dielectric layer.
  • the second support portion is located at intervals from the first support portion.
  • Each of the plurality of first conductive columnar portions has a nano-sized outer diameter.
  • Each of the plurality of first conductive columnar portions is supported by the first support portion and extends in one direction from the first support portion to the second support portion.
  • the first dielectric layer covers each of the plurality of first conductive columnar portions.
  • Each of the plurality of second conductive columnar portions has a nano-sized outer diameter.
  • Each of the plurality of second conductive columnar portions is supported by the second support portion and extends in one direction from the second support portion to the first support portion.
  • the second dielectric layer covers each of the plurality of second conductive columnar portions.
  • the conductive portion is provided on the first dielectric layer and faces at least a part of each of the plurality of first conductive columnar portions via the first dielectric layer.
  • the conductive portion is provided on the second dielectric layer and faces at least a part of each of the plurality of second conductive columnar portions via the second dielectric layer.
  • the tips of the plurality of second conductive columnar portions are located closer to the first support portion than the tips of the plurality of first conductive columnar portions.
  • the method for manufacturing a capacitor based on the present invention includes a first support portion, a second support portion, a plurality of first conductive columnar portions, a first dielectric layer, a plurality of second conductive columnar portions, and a second dielectric.
  • a body layer and a conductive portion are provided, and each of the plurality of first conductive columnar portions has a nano-sized outer diameter, is supported by the first support portion, and is supported in one direction away from the first support portion.
  • the first dielectric layer covers each of the plurality of first conductive columnar portions, each of the plurality of second conductive columnar portions has a nano-sized outer diameter, and the second support portion.
  • the second dielectric layer covers each of the plurality of second conductive columnar portions, and the conductive portion is provided on the first dielectric layer. At least a part of each of the plurality of first conductive columnar portions is opposed to each other via the first dielectric layer, and at least one of the plurality of second conductive columnar portions is provided on the second dielectric layer.
  • a method for manufacturing a capacitor that faces a part via a second dielectric layer that is, an approaching step of bringing a second support portion closer to a first support portion, a plurality of first conductive columnar portions, and a plurality of second conductive portions. It is provided with a fixing step of fixing the columnar portions to each other.
  • the tips of the plurality of second conductive columnar portions are placed closer to the first support portion than the tips of the plurality of first conductive columnar portions. Place in.
  • the fixing step the plurality of first conductive columnar portions and the plurality of second conductive columnar portions are fixed to each other via an adhesive and at least the first dielectric layer and the second dielectric layer.
  • a capacitor having a plurality of conductive columnar portions having a nano-sized outer diameter it is possible to improve the withstand voltage while suppressing a decrease in volume capacity density, and it can be efficiently and easily manufactured.
  • FIG. 1 is a cross-sectional view showing the configuration of a capacitor according to the first embodiment of the present invention.
  • FIG. 2 is a perspective view schematically showing the configuration of the capacitor according to the first embodiment of the present invention.
  • the capacitor 100 includes a first support portion 110, a second support portion 120, a plurality of first conductive columnar portions 112, and a first dielectric. It includes a layer 114, a plurality of second conductive columnar portions 122, a second dielectric layer 124, and a conductive portion 130.
  • the outer shape of the first support portion 110 is not particularly limited.
  • the first support portion 110 may have, for example, a plate-like, flat plate-like, thin-film or film-like outer shape.
  • the first support portion 110 can be easily handled when manufacturing the capacitor 100.
  • the first support portion 110 is in the form of a thin film, the thickness of the entire capacitor 100 can be reduced.
  • the surface of the first support portion 110 on the second support portion 120 side is a substantially flat surface.
  • the outer shape of the first support portion 110 when viewed from the second support portion 120 side is not particularly limited.
  • the outer shape of the first support portion 110 has rounded corners such as an ellipse in consideration of mounting the capacitor 100 when the first support portion 110 is viewed from the second support portion 120 side. It may be possible that a hole is formed.
  • the material constituting the first support portion 110 is not particularly limited.
  • the first support portion 110 may be made of a metal, a semiconductor material, ceramics, or a resin material formed by curing a polymer material.
  • the first support portion 110 is preferably made of a metal such as aluminum or copper. Since the first support portion 110 is made of metal, the first support portion 110 can be used as a connection electrode for electrically connecting the first support portion 110 from the outside of the capacitor 100 to the first conductive columnar portion 112 described later. Furthermore, the heat resistance of the capacitor 100 can be improved.
  • the first support portion 110 When the first support portion 110 is made of a material other than metal, the first support portion 110 is electrically connected to another electronic component different from the capacitor 100 and the first conductive columnar portion 112 to each other.
  • a connection electrode or an electrical wiring unit for the purpose may be provided.
  • Each of the plurality of first conductive columnar portions 112 has a nano-sized outer diameter.
  • the nanosize means, for example, 0.1 nm or more and 1000 nm or less.
  • Each of the plurality of first conductive columnar portions 112 may have a tubular shape or a bottomed tubular shape.
  • the plurality of first conductive columnar portions 112 are made of a conductive material, but in the plurality of first conductive columnar portions 112, a member made of a semiconductor material or an insulating material is thinly coated with a metal. It may be composed of a columnar object formed by being formed.
  • Each of the plurality of first conductive columnar portions 112 includes, for example, carbon nanofibers or other nanofibers composed of ZnO or the like, nanorods or nanowires composed of ZnO, GaN, hematite or the like.
  • the plurality of first conductive column portions 112 are specifically made of carbon nanotubes, and more specifically, each of the plurality of first conductive column portions 112 is, for example, 100 to 200. It consists of multiple carbon nanotubes.
  • the chirality of carbon nanotubes is not particularly limited.
  • the carbon nanotube may be a semiconductor type or a metal type, and the carbon nanotube may contain both a semiconductor type and a metal type. From the viewpoint of electrical resistance, carbon nanotubes preferably have a higher proportion of metal type than semiconductor type.
  • the number of layers constituting the carbon nanotubes is not particularly limited.
  • the carbon nanotube may be SWCNT (Single Wall Carbon Nanotube) composed of one layer or MWCNT (Multiwall Carbon Nanotube) composed of two or more layers.
  • Each of the plurality of first conductive columnar portions 112 is supported by the first support portion 110 and extends in one direction away from the first support portion 110.
  • each of the plurality of first conductive columnar portions 112 is provided so as to extend from the surface of the first support portion 110, but extends from the inside to the outside of the first support portion 110. It may be provided as follows.
  • the length of each of the plurality of first conductive columnar portions 112 is not particularly limited.
  • the length of each of the plurality of first conductive columnar portions 112 is preferably long from the viewpoint of the capacitance density per area in the plane direction orthogonal to the extending direction of the plurality of first conductive columnar portions 112.
  • the length of each of the plurality of first conductive columnar portions 112 is, for example, several ⁇ m or more, 20 ⁇ m or more, 50 ⁇ m or more, 100 ⁇ m or more, 500 ⁇ m or more, 750 ⁇ m or more, 1000 ⁇ m or more, or 2000 ⁇ m or more.
  • the lengths of the plurality of first conductive columnar portions 112 may be different from each other, but the tips of the plurality of first conductive columnar portions 112 are on a virtual plane substantially perpendicular to the one direction. It is preferable that they are aligned. Thereby, the capacitance of the capacitor 100 according to the present embodiment can be easily controlled. Further, in the method for manufacturing the capacitor 100 according to the present embodiment described later, in the approaching step of bringing the second support portion 120 closer to the first support portion 110, the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 112 The 122 and the can be fitted deeper into each other.
  • the first dielectric layer 114 covers each of the plurality of first conductive columnar portions 112.
  • the first dielectric layer 114 covering each of the plurality of first conductive columnar portions 112 is located on the first support portion 110 so as to be continuous with each other. More specifically, the first dielectric layer 114 covers each of the plurality of first conductive columnar portions 112 on the first support portion 110.
  • An additional conductor layer may be provided between the first dielectric layer 114 and the plurality of first conductive columnar portions 112. Thereby, the parasitic resistance of the capacitor 100 can be further reduced.
  • the material constituting the first dielectric layer 114 is not particularly limited, and for example, silicon dioxide, aluminum oxide, silicon nitride, tantalum oxide, hafnium oxide, barium titanate, lead zirconate titanate, or a combination thereof can be used. Can be mentioned.
  • the second support portion 120 is located at intervals from the first support portion 110.
  • the second support portion 120 may have a shape that the first support portion 110 can have.
  • the second support portion 120 may be made of a material that can form the first support portion 110.
  • the second support portion 120 has a similar configuration so as to correspond to the first support portion 110.
  • the capacitor 100 may be provided with a plurality of second support portions 120 for one first support portion 110, or a plurality of first supports for one second support portion 120.
  • the unit 110 may be provided.
  • the number of the first support portion 110 and the second support portion 120 included in the capacitor 100 is appropriately selected in consideration of the configuration of the mounting substrate on which the capacitor 100 is mounted.
  • Each of the plurality of second conductive columnar portions 122 has a nano-sized outer diameter. Specifically, each of the plurality of second conductive columnar portions 122 is supported by the second support portion 120 and extends in one direction away from the second support portion 120. Each of the plurality of second conductive column portions 122 may have a shape that the plurality of first conductive column portions 112 can have.
  • Each of the plurality of second conductive column portions 122 may be made of a material capable of forming each of the first conductive column portions 112.
  • the plurality of second conductive columnar portions 122 are made of carbon nanotubes.
  • at least one of the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 is made of carbon nanotubes.
  • both the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are made of carbon nanotubes.
  • each of the second conductive column portions 122 has substantially the same configuration as each of the plurality of first conductive column portions 112.
  • each of the plurality of first conductive columnar portions 112 extends along one direction from the first support portion 110 to the second support portion 120.
  • Each of the plurality of second conductive columnar portions 122 extends along one direction from the second support portion 120 toward the first support portion 110.
  • the tip 123 of each of the plurality of second conductive columnar portions 122 is located closer to the first support portion 110 than the tip end 123 of each of the plurality of first conductive columnar portions 112.
  • the position of each tip 113 of the first conductive columnar portion 112 is preferably closer to the second support portion 120, and the position of each tip 123 of the second conductive columnar portion 122 is The closer it is to the first support portion 110, the more preferable it is.
  • FIG. 3 is a cross-sectional view showing the configuration of the capacitor according to the first modification of the first embodiment of the present invention. As shown in FIG.
  • At least one of the plurality of first conductive columnar portions 112 is a plurality of first conductive column portions 112 on the virtual plane. It is located closer to the other first conductive columnar portion 112 than the two conductive columnar portion 122.
  • at least one of the plurality of second conductive columnar portions 122 is a plurality of first conductive columnar portions 112 on the virtual plane. It is located closer to the other second conductive columnar portion 122.
  • the second dielectric layer 124 covers each of the plurality of second conductive columnar portions 122. Specifically, the second dielectric layer 124 covers the entire surface of each of the plurality of first conductive columnar portions 112 on the second support portion 120. In the present embodiment, the second dielectric layer 124 that covers each of the plurality of second conductive columnar portions 122 is located on the second support portion 120 so as to be continuous with each other.
  • the material constituting the second dielectric layer 124 is not particularly limited.
  • the material constituting the second dielectric layer 124 may be composed of a material capable of forming the first dielectric layer 114.
  • the conductive portion 130 is provided on the first dielectric layer 114 and faces at least a part of each of the plurality of first conductive columnar portions 112 via the first dielectric layer 114. There is.
  • the conductive portion 130 is provided on the second dielectric layer 124 and faces at least a part of each of the plurality of second conductive columnar portions 122 via the second dielectric layer 124.
  • the first dielectric layer 114 is in contact with the second dielectric layer 124 via the conductive portion 130. Further, a part of the first dielectric layer 114 may be in direct contact with a part of the second dielectric layer 124.
  • the conductive portion 130 on the first dielectric layer 114 and the conductive portion 130 on the second dielectric layer 124 are formed of an integral member.
  • the conductive portion 130 has a tip 113 of each of the plurality of first conductive columnar portions 112 and a plurality of second conductive columnar portions 122 in one direction from the first support portion 110 to the second support portion 120. It is located between each tip 123 of the.
  • the material constituting the conductive portion 130 will be described in the description of the manufacturing method of the capacitor 100.
  • a method for manufacturing the capacitor 100 according to the first embodiment of the present invention will be described.
  • FIG. 4 is a flowchart showing a method for manufacturing a capacitor according to the first embodiment of the present invention.
  • the 100 manufacturing method of the capacitor according to the first embodiment of the present invention includes the first columnar portion forming step S1, the first dielectric coating step S2, the second columnar portion forming step S3, and the first columnar portion forming step S3.
  • the two-dielectric coating step S4, the adhesive arranging step S5, the approaching step S6, and the fixing step S7 are provided.
  • FIG. 5 is a diagram showing a state in which a plurality of first conductive columnar portions and a first dielectric layer are provided on the first support portion in the method for manufacturing a capacitor according to the first embodiment of the present invention.
  • the first conductive columnar portion 112 is grown from the first support portion 110.
  • the carbon nanotubes, which are the first conductive columnar portions 112 are grown from the catalyst particles arranged on the first support portion 110.
  • the catalyst particles are made of, for example, Fe, Ni or Co when the first conductive columnar portion 112 is a carbon nanotube, or an alloy containing these, and when the first conductive columnar portion 112 contains ZnO, for example, Pt or Au or It is made of an alloy containing these.
  • Examples of the method for arranging the catalyst particles include a combination of a CVD method, sputtering or PVD (Physical Vapor Deposition) and lithography or etching.
  • the first conductive columnar portion 112 and the second conductive columnar portion 122 are viewed from one direction from the first support portion 110 to the second support portion 120 in the plane direction perpendicular to the one direction.
  • the positions of the catalyst particles are appropriately selected by patterning so that the particles are located apart from each other.
  • the growth method of the plurality of first conductive columnar portions 112 is not particularly limited.
  • the plurality of first conductive columnar portions 112 can be grown by using CVD, a plasma-enhanced CVD method, or the like.
  • the gas used in the CVD or plasma-enhanced CVD method include carbon monoxide, methane, ethylene, acetylene, or a mixture thereof with hydrogen or ammonia.
  • Each of the plurality of first conductive columnar portions 112 grows from the surface of the catalyst particles. Each of the plurality of first conductive columnar portions 112 grows so that the tip 113 is separated from the first support portion 110. In the present embodiment, one first conductive columnar portion 112 grows on the plurality of catalyst particles in the above set.
  • each of the plurality of first conductive columnar portions 112 When each of the plurality of first conductive columnar portions 112 is grown by using the above CVD or plasma-enhanced CVD method or the like, each of the plurality of first conductive columnar portions 112 can be formed by appropriately selecting temperature conditions, gas conditions, and the like. However, each of the plurality of first conductive columnar portions 112 can be grown so as to have a length and an outer diameter within a desired range. However, the specific length of each of the plurality of first conductive columnar portions 112 differs from each other due to variations in gas concentration, gas flow rate, and temperature on the surface of the first support portion 110.
  • Each of the plurality of first conductive columnar portions 112 is grown on a different substrate from the first support portion 110, and then these first conductive columnar portions 112 are chemically or chemically formed on the first support portion 110. It may be transferred by mechanically inserting it.
  • the joint portion between the substrate and the first conductive columnar portion 112 is the tip 113 in the capacitor 100 according to the present embodiment. As a result, the tips 113 can be easily aligned in the plane direction substantially perpendicular to the above one direction.
  • the method of growing the plurality of first conductive columnar portions 112 on the substrate is the same as the method of growing the plurality of first conductive columnar portions 112 on the first support portion 110 described above.
  • Examples of the material constituting the substrate include silicon oxide, silicon, gallium arsenide, aluminum, and SUS.
  • each of the plurality of first conductive columnar portions 112 may be formed by thinly coating the columnar material with a metal instead of forming the carbon nanotubes by growing them.
  • Specific methods for the coating include ALD (Atomic Layer Deposition) method, CVD (Chemical Vapor Deposition) method, MOCVD (Metalorganic Chemical Vapor Deposition) method, supercritical fluid deposition method, plating method, or conductive paste. Examples thereof include a method of drying the coating after coating.
  • the first dielectric layer 114 is projected from the plurality of first conductive columnar portions 112 and the first conductive columnar portion 112 in the first support portion 110. Cover on the surface on the side of the surface.
  • the coating method of the first dielectric layer 114 is not particularly limited, and examples thereof include a plating method, an ALD method, a CVD method, a MOCVD method, a supercritical fluid deposition method, and sputtering.
  • the method for manufacturing the capacitor 100 according to the present embodiment includes the first dielectric coating step S2 before the adhesive arranging step S5 and the approaching step S6, which will be described later. It may be prepared after the step S6.
  • a plurality of second conductive columnar portions 122 can be arranged on the second support portion 120.
  • the first dielectric layer 114 can be arranged on the first support portion 110 and the first conductive columnar portion 112 in the first dielectric coating step S2 by the same method.
  • the second dielectric layer 124 can be arranged on the second support portion 120 and the second conductive columnar portion 122.
  • the method for manufacturing the capacitor 100 according to the present embodiment includes a second dielectric coating step S4 before the adhesive arranging step S5 and the approaching step S6, which will be described later. It may be prepared after the step S6.
  • FIG. 6 is a diagram showing a state in which a sheet-shaped adhesive is arranged between the first support portion and the second support portion in the method for manufacturing a capacitor according to the first embodiment of the present invention.
  • the adhesive arranging step S5 of the present embodiment the plurality of first conductive columnar portions 112 and the plurality of first conductive column portions 112 are before the second support portion 120 is brought close to the first support portion 110.
  • a sheet-like adhesive 10 is arranged as an adhesive between the conductive columnar portion 122 and the conductive columnar portion 122.
  • the sheet-like adhesive 10 is arranged on the first dielectric layer 114 provided on the tip 113 of each of the plurality of first conductive columnar portions 112.
  • the second support portion 120 is brought closer to the first support portion 110. Specifically, the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are pressed against the sheet-like adhesive 10 via the first dielectric layer 114 and the second dielectric layer 124, respectively. At the same time, the second support portion 120 is brought closer to the first support portion 110. In the present embodiment, the plurality of first conductive columnar portions 112 coated with the first dielectric layer 114 and the plurality of second conductive columnar portions 122 coated with the second dielectric layer 124 are adhered in a sheet shape. Penetrates agent 10.
  • the tip 123 of each of the second conductive columnar portions 122 is arranged closer to the first support portion 110 than the tip end 113 of each of the plurality of first conductive columnar portions 112.
  • the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are combined with the sheet-like adhesive 10 while heating the sheet-like adhesive 10 to reduce the viscosity. You may press it.
  • the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are fixed to each other.
  • the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are fixed to each other by curing the adhesive.
  • the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are fixed to each other via a cured adhesive and at least the first dielectric layer 114 and the second dielectric layer 124.
  • the sheet-shaped adhesive 10 is made of a material whose viscosity is lowered by heating, the sheet-shaped adhesive 10 is heated to bring the second support portion 120 closer to the first support portion 110, and then the sheet-shaped adhesive.
  • the sheet-like adhesive 10 may be cured by lowering the temperature of 10.
  • the above-mentioned adhesive has conductivity.
  • the cured adhesive becomes the conductive portion 130.
  • a part of each of the plurality of first conductive columnar portions 112 and a part of each of the plurality of second conductive columnar portions 122 are arranged so as to be embedded in the conductive portion 130. Therefore, due to the anchor effect, the adhesive, that is, the conductive portion 130, each of the plurality of first conductive columnar portions 112, and each of the plurality of second conductive columnar portions 122 are firmly adhered to each other.
  • the adhesive that is, the conductive portion 130 is composed of a cured product of a paste-like conductive material containing a conductive polymer or a metal filler such as an Ag filler.
  • the capacitor 100 according to the first embodiment of the present invention as shown in FIG. 1 is manufactured.
  • each of the plurality of first conductive columnar portions 112 is supported by the first support portion 110, and the first support portion 110 to the second support portion 120 It extends along one direction toward.
  • Each of the plurality of second conductive columnar portions 122 is supported by the second support portion 120 and extends in one direction from the second support portion 120 to the first support portion 110.
  • the conductive portion 130 is provided on the first dielectric layer 114 and faces at least a part of each of the plurality of first conductive columnar portions 112 via the first dielectric layer 114.
  • the conductive portion 130 is provided on the second dielectric layer 124 and faces at least a part of each of the plurality of second conductive columnar portions 122 via the second dielectric layer 124.
  • the tip 123 of each of the plurality of second conductive columnar portions 122 is located closer to the first support portion 110 than the tip end 113 of each of the plurality of first conductive columnar portions 112.
  • the withstand voltage can be improved while suppressing the decrease in the volume capacity density. Furthermore, the capacitor 100 having such a configuration can be manufactured efficiently and easily.
  • At least one of the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 is made of carbon nanotubes. Since the conductive columnar portion made of carbon nanotubes has better mechanical properties than the conductive columnar portion made of metal of the same size, the reliability of the capacitor 100 can be improved.
  • both the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are made of carbon nanotubes.
  • the mechanical properties of both the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 can be improved, so that the reliability of the capacitor 100 can be further improved.
  • the method for manufacturing the capacitor 100 according to the first embodiment of the present invention includes an approach step S6 in which the second support portion 120 is brought closer to the first support portion 110, a plurality of first conductive columnar portions 112, and a plurality of second conductive columnar portions.
  • a fixing step S7 for fixing the portions 122 to each other is provided.
  • the approaching step S6 by bringing the second support portion 120 closer to the first support portion 110, the tips of the plurality of second conductive columnar portions 122 are brought from the tips of the plurality of first conductive columnar portions 112. It is arranged on the first support portion 110 side.
  • the fixing step S7 the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are fixed to each other via an adhesive and at least the first dielectric layer 114 and the second dielectric layer 124. ..
  • the capacitor 100 according to the first embodiment of the present invention in which the withstand voltage is improved while suppressing the decrease in the volume capacity density can be efficiently and easily manufactured.
  • the adhesive has conductivity.
  • the cured adhesive becomes the conductive portion 130.
  • the surfaces of the first dielectric layer 114 and the second dielectric layer 124 of the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are formed without separately coating the conductive portions 130.
  • Each counter electrode can be provided.
  • An adhesive arranging step S5 for arranging a sheet-like adhesive as an adhesive is further provided.
  • the second support portion 120 is brought closer to the first support portion 110, the second support portion 120 is first pressed while the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 are pressed against the sheet-like adhesive. Bring it closer to the support 110.
  • the relative position of the member provided on the second support portion 120 side can be determined with respect to the member provided on the first support portion 110 side while providing the adhesive, and the capacitor 100 can be efficiently determined. Can be manufactured.
  • the capacitor according to the second embodiment of the present invention is different from the capacitor 100 according to the first embodiment of the present invention in the relative position of the conductive portion with respect to the conductive columnar portion. Therefore, the description of the configuration similar to that of the capacitor 100 according to the first embodiment of the present invention will not be repeated.
  • FIG. 7 is a cross-sectional view showing the configuration of the capacitor according to the second embodiment of the present invention.
  • the conductive portion 230 is located on the first dielectric layer 114 and the second dielectric layer 124, at least from the first support portion 110 to the first support portion 110. It is located from the tip 113 of each of the plurality of first conductive columnar portions 112 in one direction toward the support portion 120 to the tip 123 of each of the plurality of second conductive columnar portions 122.
  • the facing area via the conductive portion 230 can be increased, so that the capacitance of the capacitor 200 can be increased.
  • the conductive portion 230 is arranged in the entire gap formed by the first conductive columnar portion 112 and the second conductive columnar portion 122 adjacent to each other, so that the conductive portion 230 is arranged in the capacitor 200.
  • the cross-sectional area of the conductive path of the capacitor 200 can be increased, and the parasitic resistance component in the capacitor 200 can be reduced.
  • the conductive portion 230 faces the first conductive columnar portion 112 via the first dielectric layer 114 on the tip 113 side of the plurality of first conductive columnar portions 112. are doing. Further, the conductive portion 230 faces the second conductive column portion 122 via the second dielectric layer 124 on the tip 123 side of the plurality of second conductive column portions 122. As a result, the capacitance of the capacitor 200 can be further increased.
  • the method for manufacturing the capacitor 200 according to the second embodiment of the present invention is different from the method for manufacturing the capacitor 100 according to the first embodiment of the present invention in the approach step S6.
  • the second support portion 120 when the second support portion 120 is brought closer to the first support portion 110, a plurality of first conductive columnar portions 112 are attached to the sheet-like adhesive 10. And the plurality of second conductive columnar portions 122 are pressed without penetrating. As a result, the sheet-like adhesive 10 is deformed along the respective shapes of the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122. Therefore, the cured adhesive, that is, the conductive portion 230 is arranged as described above with respect to the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122.
  • the sheet-shaped adhesive 10 may be composed of a material that becomes gel-like or liquid by heating. Thereby, the cured adhesive, that is, the conductive portion 230 can be easily arranged as described above.
  • the capacitor according to the third embodiment of the present invention is mainly different in the length of the conductive columnar portion from the capacitor 100 according to the first embodiment of the present invention. Therefore, the description of the configuration similar to that of the capacitor 100 according to the first embodiment of the present invention will not be repeated.
  • FIG. 8 is a cross-sectional view showing the configuration of the capacitor according to the third embodiment of the present invention.
  • the conductive portion 330 is first located on the tip 113 side of the plurality of first conductive columnar portions 312 via the first dielectric layer 114. It faces the conductive columnar portion 312.
  • the length dimension of each of the plurality of first conductive columnar portions 312 is 0, which is the separation distance between the plurality of first support portions 110 and the second support portion 120. It is larger than 6.6 times the size. As a result, it is possible to suppress a decrease in the volume capacity density of the capacitor 300.
  • the tip 123 of each of the plurality of second conductive columnar portions 122 is located closer to the first support portion 110 than the tip end 113 of each of the plurality of first conductive columnar portions 312.
  • the capacitor according to the fourth embodiment of the present invention is mainly different in the length of the conductive columnar portion from the capacitor 100 according to the first embodiment of the present invention. Therefore, the description of the configuration similar to that of the capacitor 100 according to the first embodiment of the present invention will not be repeated.
  • FIG. 9 is a cross-sectional view showing the configuration of the capacitor according to the fourth embodiment of the present invention.
  • the length dimension of each of the plurality of first conductive columnar portions 412 and the plurality of second conductive columnar portions 422 is a plurality of first support. It is larger than the dimension of 0.9 times the separation distance between the portion 110 and the second support portion 120. As a result, it is possible to suppress a decrease in the volume capacity density of the capacitor 400.
  • the tips 123 of each of the plurality of second conductive columnar portions 122 are located closer to the first support portion 110 than the tips 113 of each of the plurality of first conductive columnar portions 412.
  • the capacitor according to the fifth embodiment of the present invention is mainly different from the capacitor 200 according to the second embodiment of the present invention in the position of the conductive portion. Therefore, the description of the configuration similar to that of the capacitor 200 according to the second embodiment of the present invention will not be repeated.
  • FIG. 10 is a cross-sectional view showing the configuration of the capacitor according to the fifth embodiment of the present invention.
  • the conductive portion 530 faces the whole of each of the plurality of first conductive columnar portions 112 via the first dielectric layer 114, and , Each of the second conductive columnar portions 122 faces each other via the second dielectric layer 124.
  • the area facing the conductive portion 530 can be further increased, so that the capacitance of the capacitor 500 can be further increased. ..
  • the same method as the method for manufacturing the capacitor 200 according to the second embodiment of the present invention can be adopted, but in the adhesive placement step S5, the approach step S6, and the fixing step S7. Can adopt a different method.
  • the modified example of the method for manufacturing the capacitor 500 according to the fifth embodiment of the present invention does not include the adhesive arranging step S5. Instead of this adhesive arranging step S5, in a modified example of the method for manufacturing the capacitor 500 according to the fifth embodiment of the present invention, the tips 123 of each of the plurality of second conductive columnar portions 122 are formed on the plurality of first conductive columnar portions.
  • an adhesive can be provided over the entire gap between the first dielectric layer 114 and the second dielectric layer 124, such as between the first support portion 110 and the first support portion 110.
  • this adhesive is cured to become the conductive portion 530, the facing area of the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 via the conductive portion 530 can be improved.
  • the preheated adhesive may be poured in the above-mentioned pouring step.
  • the adhesive may be poured while heating.
  • FIG. 11 is a cross-sectional view showing the configuration of the capacitor according to the sixth embodiment of the present invention.
  • one of the plurality of first conductive columnar portions 612 and the plurality of second conductive columnar portions 622 is made of metal.
  • the withstand voltage can be improved while suppressing a decrease in volume volume density.
  • each of the plurality of second conductive columnar portions 622 is made of metal.
  • the plurality of second conductive columnar portions 622 made of metal are provided as follows. That is, in the same manner as the method for manufacturing the capacitor 100 according to the first embodiment of the present invention, the ALD method is performed on the first dielectric layer 114 provided by the first columnar portion forming step S1 and the first dielectric coating step S2. , MOCVD method, supercritical fluid deposition method, or the like, the conductive portion 630 is laminated. Then, a recess is formed in the laminated conductive portion 630 by chemical etching. On the conductive portion 630 in which the recess is formed, the second dielectric layer 124 is further coated along the shape of the recess. Then, a second conductive columnar portion 622 is further provided on the second dielectric layer 124 formed on the recess. Finally, the second support portion 120 may be provided on the second dielectric layer 124 and the second conductive columnar portion 622.
  • the capacitor according to the seventh embodiment of the present invention is mainly different from the capacitor 100 according to the first embodiment of the present invention in that the conductive portion is divided into two parts. Therefore, the description of the configuration similar to that of the capacitor 100 according to the first embodiment of the present invention will not be repeated.
  • FIG. 12 is a cross-sectional view showing the configuration of the capacitor according to the seventh embodiment of the present invention.
  • the capacitor 700 according to the seventh embodiment of the present invention includes a first conductor layer 731 as a part of the conductive portion and a second conductor layer 732 as another part of the conductive portion. ..
  • the first conductor layer 731 is formed over the entire first dielectric layer 114.
  • the second conductor layer 732 is formed over the entire second dielectric layer 124.
  • the materials constituting each of the first conductor layer 731 and the second conductor layer 732 are not particularly limited. Examples of the material constituting each of the first conductor layer 731 and the second conductor layer 732 include silver, gold, copper, platinum, aluminum, and alloys containing these.
  • the capacitor 700 according to the seventh embodiment of the present invention further includes an intermediate fixing portion 740.
  • the intermediate fixing portion 740 may be made of a conductive material or an insulating material.
  • the first conductor layer 731 and the second conductor layer 732 are electrically connected to each other, so that the capacitor 700 is connected to two capacitors.
  • the specific position of the intermediate fixing portion 740 is not particularly limited as long as each of the plurality of first conductive columnar portions 112 and the plurality of second conductive columnar portions 122 is indirectly fixed to each other. In the above one direction, it may be located only between the tips 113 of the plurality of first conductive columnar portions 112 and the tips 123 of the plurality of second conductive columnar portions 122, or in the above one direction, the first support. It may be positioned so as to fill the space between the first conductor layer 731 and the second conductor layer 732 between the portion 110 and the second support portion 120.
  • the method for forming the intermediate fixing portion 740 is not particularly limited, but is the same as the method for forming the conductive portion 130 of the capacitor 100 according to the first embodiment of the present invention or the conductive portion 530 of the capacitor 500 according to the fifth embodiment of the present invention. Can be adopted.
  • each tip 113 of the first conductive columnar portion 112 is located at the second support portion 120, similarly to the capacitor 100 according to the first embodiment of the present invention.
  • FIG. 13 is a cross-sectional view showing the configuration of the capacitor according to the first modification of the seventh embodiment of the present invention.
  • each of the plurality of first conductive columnar portions 112 in one direction from the first support portion 110 to the second support portion 120.
  • the dimension of the difference between the position of the tip 113 and the position of the distance between the tips 123 of the plurality of second conductive columnar portions 122 is 0, which is the distance between the first support portion 110 and the second support portion 120. It is less than 6 times.
  • each of the plurality of second conductive columnar portions 122 is located closer to the first support portion 110 than the tip end 113 of each of the plurality of first conductive columnar portions 112, also in the present embodiment. , The withstand voltage can be improved while suppressing the decrease in volume capacity density.
  • the method for manufacturing the capacitor 700 according to the seventh embodiment of the present invention includes a step of laminating the first conductor layer 731 on the first dielectric layer 114 before bringing the second support portion 120 closer to the first support portion 110. Further includes a step of laminating the second conductor layer 732 on the second dielectric layer 124.
  • the first conductor layer 731 and the second conductor layer 732 laminated in these laminating steps have high adhesion at the interface with the first dielectric layer 114 and the second dielectric layer 124, respectively. Due to the high adhesion, the generation of bubbles is suppressed at these interfaces.
  • the capacitor 100 according to the first embodiment of the present invention when the conductive portion 130 made of an adhesive is adhered to the first dielectric layer 114 and the second dielectric layer 124, bubbles are generated at the bonding interface. To do. As described above, at the interface of the capacitor 700 according to the seventh embodiment of the present invention, bubbles that affect the effective area of the counter electrode composed of the first conductor layer 731 or the second conductor layer 732 are not generated. , The decrease in volume capacity density can be further suppressed. Further, in the seventh embodiment of the present invention, the capacitor 700 having an improved withstand voltage while suppressing a decrease in the volumetric capacity density by a manufacturing method different from that of the capacitor 100 according to the first embodiment of the present invention can be efficiently used. Easy to manufacture.
  • each of the first conductor layer 731 and the second conductor layer 732 may be formed immediately after the first dielectric coating step S2 and the second dielectric coating step S4, respectively.
  • the method of laminating the first conductor layer 731 and the second conductor layer 732 is not particularly limited.
  • Each of the first conductor layer 731 and the second conductor layer 732 is formed by, for example, an ALD method, a CVD method, a MOCVD method, a supercritical fluid deposition method, a sputtering method, or the like.
  • the capacitor according to the eighth embodiment of the present invention is different from the capacitor 700 according to the seventh embodiment of the present invention in that it further includes a fixed layer. Therefore, the description of the configuration similar to that of the capacitor 700 according to the seventh embodiment of the present invention will not be repeated.
  • FIG. 14 is a cross-sectional view showing the configuration of the capacitor according to the eighth embodiment of the present invention.
  • the capacitor 800 according to the eighth embodiment of the present invention further includes a fixed layer 850.
  • the fixing layer 850 is located between the first conductor layer 731 and the intermediate fixing portion 740.
  • the fixing layer 850 is also located between the second conductor layer 732 and the intermediate fixing portion 740.
  • the fixed layer 850 is made of an insulating material.
  • the capacitor 800 can include two independent capacitors while increasing the capacitance density per volume.
  • the fixed layer 850 may be made of a conductive material.
  • the mechanical strength of the capacitor 700 can be improved and two capacitors can be connected in series.
  • the capacitor according to the ninth embodiment of the present invention mainly differs from the capacitor 100 according to the first embodiment of the present invention in the configuration of each columnar portion. Therefore, the description of the configuration similar to that of the capacitor 100 according to the first embodiment of the present invention will not be repeated.
  • FIG. 15 is a cross-sectional view showing the configuration of the capacitor according to the ninth embodiment of the present invention.
  • the lengths of the plurality of second conductive columnar portions 122 are different from each other.
  • the tip 123 of each of the plurality of second conductive columnar portions 122 is closer to the first support portion 110 than the tip end 113 of each of the plurality of first conductive columnar portions 112. positioned. Therefore, also in the capacitor 900 according to the present embodiment, the withstand voltage can be improved while suppressing the decrease in the volume capacity density. Furthermore, the capacitor 900 having such a configuration can be manufactured efficiently and easily.
  • the capacitor according to the tenth embodiment of the present invention mainly differs from the capacitor 900 according to the ninth embodiment of the present invention in the configuration of each columnar portion. Therefore, the description of the configuration similar to that of the capacitor 900 according to the ninth embodiment of the present invention will not be repeated.
  • FIG. 16 is a cross-sectional view showing the configuration of the capacitor according to the tenth embodiment of the present invention.
  • at least one of the plurality of second conductive columnar portions 122 is the first dielectric at the tip 123 via the second dielectric layer 124. It is in contact with the body layer 114. This improves the mechanical strength of the capacitor 1000.
  • At least one of the plurality of first conductive columnar portions 112 may be in contact with the second dielectric layer 124 at the tip 113 via the first dielectric layer 114.
  • the capacitor according to the eleventh embodiment of the present invention mainly differs from the capacitor 1000 according to the tenth embodiment of the present invention in the configuration of each columnar portion. Therefore, the description of the configuration similar to that of the capacitor 1000 according to the tenth embodiment of the present invention will not be repeated.
  • FIG. 17 is a cross-sectional view showing the configuration of the capacitor according to the eleventh embodiment of the present invention.
  • the capacitor 1100 according to the eleventh embodiment of the present invention at least one of the plurality of second conductive columnar portions 122 is first on the tip 123 side via the second dielectric layer 124. It is curved while being in contact with the dielectric layer 114.
  • the mechanical strength of the capacitor 1100 is improved, and the adhesive strength between the first conductive columnar portion 112 and the second conductive columnar portion 122 in one direction from the first support portion 110 to the second support portion 120 is improved.
  • At least one of the plurality of first conductive columnar portions 112 may be curved on the tip 113 side while being in contact with the second dielectric layer 124 via the first dielectric layer 114.
  • Sheet adhesive 100, 100a, 200, 300, 400, 500, 600, 700, 700a, 800, 900, 1000, 1100 Capacitor, 110 1st support, 112, 312, 421, 612 1st conductive columnar Part, 113, 123 Tip, 114 1st dielectric layer, 120 2nd support part, 122, 422, 622 2nd conductive columnar part, 124 2nd dielectric layer, 130, 230, 330, 530, 630 conductive part, 731 first conductor layer, 732 second conductor layer, 740 intermediate fixing part, 850 fixing layer.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
PCT/JP2020/016272 2019-09-25 2020-04-13 キャパシタおよびその製造方法 Ceased WO2021059569A1 (ja)

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