JPWO2024095536A1 - - Google Patents
Info
- Publication number
- JPWO2024095536A1 JPWO2024095536A1 JP2024501940A JP2024501940A JPWO2024095536A1 JP WO2024095536 A1 JPWO2024095536 A1 JP WO2024095536A1 JP 2024501940 A JP2024501940 A JP 2024501940A JP 2024501940 A JP2024501940 A JP 2024501940A JP WO2024095536 A1 JPWO2024095536 A1 JP WO2024095536A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022175699 | 2022-11-01 | ||
| JP2022175699 | 2022-11-01 | ||
| PCT/JP2023/026070 WO2024095536A1 (ja) | 2022-11-01 | 2023-07-14 | キャパシタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024095536A1 true JPWO2024095536A1 (https=) | 2024-05-10 |
| JPWO2024095536A5 JPWO2024095536A5 (https=) | 2024-09-26 |
| JP7652330B2 JP7652330B2 (ja) | 2025-03-27 |
Family
ID=90930117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024501940A Active JP7652330B2 (ja) | 2022-11-01 | 2023-07-14 | キャパシタ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20250203891A1 (https=) |
| JP (1) | JP7652330B2 (https=) |
| CN (1) | CN120019459A (https=) |
| WO (1) | WO2024095536A1 (https=) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007111107A1 (ja) * | 2006-03-24 | 2007-10-04 | Fujitsu Limited | 炭素系繊維のデバイス構造およびその製造方法 |
| JP2010506391A (ja) * | 2006-10-04 | 2010-02-25 | エヌエックスピー ビー ヴィ | Ｍｉｍキャパシタ |
| JP2010206203A (ja) * | 2009-03-02 | 2010-09-16 | Qinghua Univ | 熱伝導構造体の製造方法 |
| WO2018173884A1 (ja) * | 2017-03-21 | 2018-09-27 | 日本電産リード株式会社 | プローブ構造体、及びプローブ構造体の製造方法 |
| WO2021059569A1 (ja) * | 2019-09-25 | 2021-04-01 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
| WO2022113843A1 (ja) * | 2020-11-27 | 2022-06-02 | 株式会社村田製作所 | キャパシタ |
-
2023
- 2023-07-14 CN CN202380074060.5A patent/CN120019459A/zh not_active Withdrawn
- 2023-07-14 JP JP2024501940A patent/JP7652330B2/ja active Active
- 2023-07-14 WO PCT/JP2023/026070 patent/WO2024095536A1/ja not_active Ceased
-
2025
- 2025-03-03 US US19/068,205 patent/US20250203891A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007111107A1 (ja) * | 2006-03-24 | 2007-10-04 | Fujitsu Limited | 炭素系繊維のデバイス構造およびその製造方法 |
| JP2010506391A (ja) * | 2006-10-04 | 2010-02-25 | エヌエックスピー ビー ヴィ | Ｍｉｍキャパシタ |
| JP2010206203A (ja) * | 2009-03-02 | 2010-09-16 | Qinghua Univ | 熱伝導構造体の製造方法 |
| WO2018173884A1 (ja) * | 2017-03-21 | 2018-09-27 | 日本電産リード株式会社 | プローブ構造体、及びプローブ構造体の製造方法 |
| WO2021059569A1 (ja) * | 2019-09-25 | 2021-04-01 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
| WO2022113843A1 (ja) * | 2020-11-27 | 2022-06-02 | 株式会社村田製作所 | キャパシタ |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250203891A1 (en) | 2025-06-19 |
| JP7652330B2 (ja) | 2025-03-27 |
| CN120019459A (zh) | 2025-05-16 |
| WO2024095536A1 (ja) | 2024-05-10 |
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