JP7143251B2 - ダンパー制御システムおよびダンパー制御方法 - Google Patents

ダンパー制御システムおよびダンパー制御方法 Download PDF

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Publication number
JP7143251B2
JP7143251B2 JP2019101611A JP2019101611A JP7143251B2 JP 7143251 B2 JP7143251 B2 JP 7143251B2 JP 2019101611 A JP2019101611 A JP 2019101611A JP 2019101611 A JP2019101611 A JP 2019101611A JP 7143251 B2 JP7143251 B2 JP 7143251B2
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JP
Japan
Prior art keywords
opening
shutter
pressure
pressure sensor
exhaust damper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019101611A
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English (en)
Japanese (ja)
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JP2020198324A (ja
JP2020198324A5 (https=
Inventor
聴 今村
充 宮崎
淳次 國澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2019101611A priority Critical patent/JP7143251B2/ja
Priority to SG11202112567WA priority patent/SG11202112567WA/en
Priority to PCT/JP2020/021418 priority patent/WO2020241848A1/ja
Priority to US17/607,999 priority patent/US11967508B2/en
Publication of JP2020198324A publication Critical patent/JP2020198324A/ja
Publication of JP2020198324A5 publication Critical patent/JP2020198324A5/ja
Application granted granted Critical
Publication of JP7143251B2 publication Critical patent/JP7143251B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F7/00—Ventilation
    • F24F7/007—Ventilation with forced flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0458—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Ventilation (AREA)
JP2019101611A 2019-05-30 2019-05-30 ダンパー制御システムおよびダンパー制御方法 Active JP7143251B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019101611A JP7143251B2 (ja) 2019-05-30 2019-05-30 ダンパー制御システムおよびダンパー制御方法
SG11202112567WA SG11202112567WA (en) 2019-05-30 2020-05-29 Damper control system and damper control method
PCT/JP2020/021418 WO2020241848A1 (ja) 2019-05-30 2020-05-29 ダンパー制御システムおよびダンパー制御方法
US17/607,999 US11967508B2 (en) 2019-05-30 2020-05-29 Damper control system and damper control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019101611A JP7143251B2 (ja) 2019-05-30 2019-05-30 ダンパー制御システムおよびダンパー制御方法

Publications (3)

Publication Number Publication Date
JP2020198324A JP2020198324A (ja) 2020-12-10
JP2020198324A5 JP2020198324A5 (https=) 2021-12-09
JP7143251B2 true JP7143251B2 (ja) 2022-09-28

Family

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JP2019101611A Active JP7143251B2 (ja) 2019-05-30 2019-05-30 ダンパー制御システムおよびダンパー制御方法

Country Status (4)

Country Link
US (1) US11967508B2 (https=)
JP (1) JP7143251B2 (https=)
SG (1) SG11202112567WA (https=)
WO (1) WO2020241848A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102737433B1 (ko) * 2022-12-16 2024-12-02 세메스 주식회사 제어 유닛 및 이를 포함하는 반도체 제조 설비
TW202520411A (zh) * 2023-10-11 2025-05-16 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000286219A (ja) 1999-03-31 2000-10-13 Shibaura Mechatronics Corp スピン処理装置およびスピン処理方法

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US3548865A (en) * 1967-12-08 1970-12-22 Bela P Povinger Pressure control apparatus
US4375224A (en) * 1981-01-21 1983-03-01 Acutherm, Inc. Air conditioning control equipment
GB8531812D0 (en) * 1985-12-24 1986-02-05 Edi Eng Ltd Control system
SE458802B (sv) * 1987-04-03 1989-05-08 Stifab Ab Regleranordning foer instaellning av ett spjaell i en ventilationskanal
US4796651A (en) * 1988-03-30 1989-01-10 LeRoy D. Ginn Variable gas volume flow measuring and control methods and apparatus
JPH06163494A (ja) 1992-11-20 1994-06-10 Hitachi Electron Eng Co Ltd 半導体洗浄装置の排気ガス制御機構
US5363872A (en) * 1993-03-16 1994-11-15 Applied Materials, Inc. Low particulate slit valve system and method for controlling same
US5518446A (en) * 1994-07-28 1996-05-21 Landis & Gyr Powers, Inc. Fume hood exhaust terminal
US5758680A (en) * 1996-03-29 1998-06-02 Lam Research Corporation Method and apparatus for pressure control in vacuum processors
WO1999031561A1 (en) * 1997-12-18 1999-06-24 Nikon Corporation Method of controlling air pressure in chamber, apparatus for the same, and exposure apparatus
JP4022309B2 (ja) 1998-04-08 2007-12-19 大日本スクリーン製造株式会社 基板処理装置
JP3623654B2 (ja) 1998-04-24 2005-02-23 大日本スクリーン製造株式会社 基板処理装置
AU2001250060A1 (en) * 2000-04-04 2001-10-15 Clifford C. Federspiel Pressure based flow rate measurement device integrated with blades of a damper
JP2006078086A (ja) * 2004-09-09 2006-03-23 Taikisha Ltd 室圧制御システム
JP2009036425A (ja) * 2007-08-01 2009-02-19 Hitachi Plant Technologies Ltd 室圧制御方法及びシステム
DE102008010658B4 (de) * 2008-02-22 2010-08-19 Knorr-Bremse Systeme für Nutzfahrzeuge GmbH Abgasregelsystem und Abgasregelverfahren
JP5744382B2 (ja) 2008-07-24 2015-07-08 株式会社荏原製作所 基板処理装置および基板処理方法
JP5528374B2 (ja) * 2011-03-03 2014-06-25 東京エレクトロン株式会社 ガス減圧供給装置、これを備えるシリンダキャビネット、バルブボックス、及び基板処理装置
JP6105868B2 (ja) * 2012-06-26 2017-03-29 株式会社不二工機 電動弁制御装置及び電動弁装置
US9465391B2 (en) * 2014-01-09 2016-10-11 Fisher Controls International Llc Valve positioner with overpressure protection capabilities

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2000286219A (ja) 1999-03-31 2000-10-13 Shibaura Mechatronics Corp スピン処理装置およびスピン処理方法

Also Published As

Publication number Publication date
US20220319874A1 (en) 2022-10-06
JP2020198324A (ja) 2020-12-10
WO2020241848A1 (ja) 2020-12-03
SG11202112567WA (en) 2021-12-30
US11967508B2 (en) 2024-04-23

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