JP7130049B2 - 波長可変レーザー - Google Patents
波長可変レーザー Download PDFInfo
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- JP7130049B2 JP7130049B2 JP2020546247A JP2020546247A JP7130049B2 JP 7130049 B2 JP7130049 B2 JP 7130049B2 JP 2020546247 A JP2020546247 A JP 2020546247A JP 2020546247 A JP2020546247 A JP 2020546247A JP 7130049 B2 JP7130049 B2 JP 7130049B2
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
- H01S5/2045—Strongly index guided structures employing free standing waveguides or air gap confinement
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
- Acoustics & Sound (AREA)
- Lasers (AREA)
Description
Claims (5)
- 利得領域および波長可変領域を含み、
前記波長可変領域は、
下部クラッド層;
前記下部クラッド層上に配置される受動光導波路;
前記受動光導波路上に配置される上部クラッド層;
前記上部クラッド層上に配置される駆動電極;
前記駆動電極上に配置される電流遮断層;
前記電流遮断層上に配置されるヒーター;および
前記受動光導波路を挟んで互いに向かい合うように配置される第1断熱溝と第2断熱溝を含み、
前記下部クラッド層は前記第1断熱溝と第2断熱溝間に配置される突起部を含み、
前記突起部は、最も幅が広い第1領域と最も幅が狭い第2領域の幅の比が1:0.1~1:0.5であり、
前記受動光導波路は、前記駆動電極によって電流が注入されたり前記ヒーターによって熱が注入される場合に屈折率が変化する、レーザー内のすべての領域に断熱溝を形成するための食刻防止層がない、波長可変レーザー。 - 前記突起部は第1方向に行くほど幅が狭くなる第1突起部を有し、
前記第1方向は前記上部クラッド層から前記下部クラッド層に向かう方向である、請求項1に記載の波長可変レーザー。 - 前記突起部は前記第1方向に行くほど幅が広くなる第2突起部を有する、請求項2に記載の波長可変レーザー。
- 前記第2突起部は前記第1突起部の下部に配置される、請求項3に記載の波長可変レーザー。
- 前記第1突起部の面積は前記第2突起部の面積より大きい、請求項4に記載の波長可変レーザー。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170159985A KR102071964B1 (ko) | 2017-11-28 | 2017-11-28 | 파장 가변 레이저 |
PCT/KR2017/013710 WO2019107580A1 (ko) | 2017-11-28 | 2017-11-28 | 파장 가변 레이저 |
KR10-2017-0159985 | 2017-11-28 |
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JP2021504976A JP2021504976A (ja) | 2021-02-15 |
JP7130049B2 true JP7130049B2 (ja) | 2022-09-02 |
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US (1) | US11437778B2 (ja) |
EP (1) | EP3719943A4 (ja) |
JP (1) | JP7130049B2 (ja) |
KR (1) | KR102071964B1 (ja) |
CN (1) | CN111418121B (ja) |
WO (1) | WO2019107580A1 (ja) |
Families Citing this family (3)
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CN112563878B (zh) * | 2020-12-10 | 2023-11-07 | 武汉光迅科技股份有限公司 | 一种热调谐半导体芯片及其制备方法 |
WO2023229437A1 (ko) * | 2022-05-26 | 2023-11-30 | 주식회사 포벨 | 광소자 |
GB202217254D0 (en) * | 2022-11-17 | 2023-01-04 | Sivers Photonics Ltd | Suspended active photonic devices |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030025976A1 (en) | 2001-07-31 | 2003-02-06 | Torsten Wipiejewski | Tunable electro-absorption modulator |
JP2005191128A (ja) | 2003-12-24 | 2005-07-14 | Samsung Electronics Co Ltd | マルチビーム型半導体レーザ |
JP2009020356A (ja) | 2007-07-12 | 2009-01-29 | Nec Corp | シリコン構造体 |
US20110150016A1 (en) | 2009-12-21 | 2011-06-23 | Electronics And Telecommunications Research Institute | Tunable laser module |
US20140264030A1 (en) | 2013-03-12 | 2014-09-18 | Massachusetts Institute Of Technology | Methods and apparatus for mid-infrared sensing |
JP2015082116A (ja) | 2013-10-24 | 2015-04-27 | ケムオプティクス インコーポレーテッドChemoptics Inc. | メタル温度センサ内蔵型の波長可変フィルタおよび外部共振器型の波長可変レーザモジュール |
US20150115219A1 (en) | 2013-10-24 | 2015-04-30 | Electronics And Telecommunications Research Institute | Superluminescent diode and method for implementing the same |
WO2017161886A1 (zh) | 2016-03-23 | 2017-09-28 | 华为技术有限公司 | 一种可调激光器及其制备方法 |
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JPH0697602A (ja) * | 1992-09-14 | 1994-04-08 | Anritsu Corp | 分布ブラッグ反射型レーザ |
JPH10506756A (ja) * | 1994-10-05 | 1998-06-30 | マサチューセッツ インスティトゥート オブ テクノロジー | 一次元周期誘導体導波路を使用する共振微小空洞 |
JPH08222808A (ja) * | 1995-02-15 | 1996-08-30 | Mitsubishi Electric Corp | 半導体発光装置の製造方法 |
JP4078898B2 (ja) * | 2002-06-28 | 2008-04-23 | 日本電気株式会社 | 熱光学位相シフタ及びその製造方法 |
US7760777B2 (en) * | 2007-04-13 | 2010-07-20 | Finisar Corporation | DBR laser with improved thermal tuning efficiency |
JP2012112984A (ja) * | 2009-02-25 | 2012-06-14 | Nec Corp | 光導波路、光導波回路およびその製造方法 |
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GB2493988B (en) * | 2011-08-26 | 2016-01-13 | Oclaro Technology Ltd | Monolithically integrated tunable semiconductor laser |
EP2989699B1 (en) * | 2013-04-30 | 2019-12-25 | Huawei Technologies Co., Ltd. | Tunable laser with high thermal wavelength tuning efficiency |
KR102049342B1 (ko) * | 2013-10-24 | 2019-11-29 | 한국전자통신연구원 | 수퍼루미네센트 다이오드 및 그의 구현 방법 |
KR101906587B1 (ko) * | 2015-06-19 | 2018-10-12 | 한국전자통신연구원 | 파장 가변 레이저 장치 |
KR102642580B1 (ko) * | 2015-11-12 | 2024-02-29 | 한국전자통신연구원 | 박막 히터 집적 파장가변 분포 궤환형 레이저 다이오드 |
-
2017
- 2017-11-28 CN CN201780097292.7A patent/CN111418121B/zh active Active
- 2017-11-28 JP JP2020546247A patent/JP7130049B2/ja active Active
- 2017-11-28 EP EP17933269.7A patent/EP3719943A4/en active Pending
- 2017-11-28 US US16/764,076 patent/US11437778B2/en active Active
- 2017-11-28 KR KR1020170159985A patent/KR102071964B1/ko active IP Right Grant
- 2017-11-28 WO PCT/KR2017/013710 patent/WO2019107580A1/ko unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030025976A1 (en) | 2001-07-31 | 2003-02-06 | Torsten Wipiejewski | Tunable electro-absorption modulator |
JP2005191128A (ja) | 2003-12-24 | 2005-07-14 | Samsung Electronics Co Ltd | マルチビーム型半導体レーザ |
JP2009020356A (ja) | 2007-07-12 | 2009-01-29 | Nec Corp | シリコン構造体 |
US20110150016A1 (en) | 2009-12-21 | 2011-06-23 | Electronics And Telecommunications Research Institute | Tunable laser module |
US20140264030A1 (en) | 2013-03-12 | 2014-09-18 | Massachusetts Institute Of Technology | Methods and apparatus for mid-infrared sensing |
JP2015082116A (ja) | 2013-10-24 | 2015-04-27 | ケムオプティクス インコーポレーテッドChemoptics Inc. | メタル温度センサ内蔵型の波長可変フィルタおよび外部共振器型の波長可変レーザモジュール |
US20150115219A1 (en) | 2013-10-24 | 2015-04-30 | Electronics And Telecommunications Research Institute | Superluminescent diode and method for implementing the same |
WO2017161886A1 (zh) | 2016-03-23 | 2017-09-28 | 华为技术有限公司 | 一种可调激光器及其制备方法 |
Also Published As
Publication number | Publication date |
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US20200388989A1 (en) | 2020-12-10 |
CN111418121A (zh) | 2020-07-14 |
EP3719943A4 (en) | 2021-07-21 |
US11437778B2 (en) | 2022-09-06 |
EP3719943A1 (en) | 2020-10-07 |
JP2021504976A (ja) | 2021-02-15 |
KR102071964B1 (ko) | 2020-02-03 |
CN111418121B (zh) | 2023-05-30 |
WO2019107580A1 (ko) | 2019-06-06 |
KR20190062655A (ko) | 2019-06-07 |
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