JP7122268B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP7122268B2
JP7122268B2 JP2019018831A JP2019018831A JP7122268B2 JP 7122268 B2 JP7122268 B2 JP 7122268B2 JP 2019018831 A JP2019018831 A JP 2019018831A JP 2019018831 A JP2019018831 A JP 2019018831A JP 7122268 B2 JP7122268 B2 JP 7122268B2
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Japan
Prior art keywords
power
frequency
generate
plasma processing
processing apparatus
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JP2019018831A
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English (en)
Japanese (ja)
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JP2020126776A (ja
JP2020126776A5 (enExample
Inventor
紳治 久保田
隆 道菅
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2019018831A priority Critical patent/JP7122268B2/ja
Priority to CN202010070264.XA priority patent/CN111524781B/zh
Priority to KR1020200008820A priority patent/KR20200096734A/ko
Priority to US16/773,800 priority patent/US11087960B2/en
Publication of JP2020126776A publication Critical patent/JP2020126776A/ja
Publication of JP2020126776A5 publication Critical patent/JP2020126776A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2019018831A 2019-02-05 2019-02-05 プラズマ処理装置 Active JP7122268B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019018831A JP7122268B2 (ja) 2019-02-05 2019-02-05 プラズマ処理装置
CN202010070264.XA CN111524781B (zh) 2019-02-05 2020-01-21 高频电源及等离子体处理装置
KR1020200008820A KR20200096734A (ko) 2019-02-05 2020-01-22 고주파 전원 및 플라즈마 처리 장치
US16/773,800 US11087960B2 (en) 2019-02-05 2020-01-27 Radio frequency power source and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019018831A JP7122268B2 (ja) 2019-02-05 2019-02-05 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2020126776A JP2020126776A (ja) 2020-08-20
JP2020126776A5 JP2020126776A5 (enExample) 2021-12-16
JP7122268B2 true JP7122268B2 (ja) 2022-08-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019018831A Active JP7122268B2 (ja) 2019-02-05 2019-02-05 プラズマ処理装置

Country Status (4)

Country Link
US (1) US11087960B2 (enExample)
JP (1) JP7122268B2 (enExample)
KR (1) KR20200096734A (enExample)
CN (1) CN111524781B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置
KR20220027803A (ko) * 2020-08-27 2022-03-08 주식회사 히타치하이테크 플라스마 처리 장치
CN114121589A (zh) * 2020-08-31 2022-03-01 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
JP2022159653A (ja) * 2021-04-05 2022-10-18 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
KR102803167B1 (ko) 2022-02-07 2025-05-07 주식회사 뉴파워 프라즈마 고주파 펄스 전원 장치 및 그의 운전 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020115301A1 (en) 1995-10-13 2002-08-22 Savas Stephen E. Pulsed plasma processing of semiconductor substrates
JP2013535074A (ja) 2010-06-11 2013-09-09 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 基板プラズマ処理技術
JP2017204467A (ja) 2016-05-10 2017-11-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2020126998A (ja) 2019-02-05 2020-08-20 東京エレクトロン株式会社 プラズマ処理装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214754Y2 (enExample) * 1978-04-25 1987-04-15
US10361802B1 (en) * 1999-02-01 2019-07-23 Blanding Hovenweep, Llc Adaptive pattern recognition based control system and method
US6400996B1 (en) * 1999-02-01 2002-06-04 Steven M. Hoffberg Adaptive pattern recognition based control system and method
KR0183844B1 (ko) * 1996-04-30 1999-05-15 김광호 알에프 발생 장치 및 이를 이용한 펄스 플라즈마 형성 방법
US7966078B2 (en) * 1999-02-01 2011-06-21 Steven Hoffberg Network media appliance system and method
JP3839352B2 (ja) * 2002-05-22 2006-11-01 株式会社日立製作所 情報記録媒体並びに情報再生方法及び装置
WO2006023726A1 (en) * 2004-08-19 2006-03-02 Intrinsix Corporation Hybrid heterodyne transmitters and receivers
JP5808012B2 (ja) * 2011-12-27 2015-11-10 東京エレクトロン株式会社 プラズマ処理装置
JP2012109605A (ja) * 2012-02-13 2012-06-07 Ulvac Japan Ltd プラズマｃｖｄ装置
US9209840B2 (en) * 2012-07-30 2015-12-08 Photonic Systems, Inc. Same-aperture any-frequency simultaneous transmit and receive communication system
US20150364300A1 (en) * 2014-06-16 2015-12-17 Lam Research Corporation Determining presence of conductive film on dielectric surface of reaction chamber
WO2016060938A2 (en) * 2014-10-08 2016-04-21 RF Micron, Inc. Radio frequency identification (rfid) moisture tag(s) and sensors with extended sensing via capillaries
US10049857B2 (en) * 2014-12-04 2018-08-14 Mks Instruments, Inc. Adaptive periodic waveform controller
TWI690972B (zh) * 2015-05-12 2020-04-11 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
JP6665183B2 (ja) * 2015-07-21 2020-03-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR20170024922A (ko) * 2015-08-26 2017-03-08 삼성전자주식회사 플라즈마 발생 장치
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
JP6643034B2 (ja) * 2015-10-09 2020-02-12 東京エレクトロン株式会社 プラズマ処理装置
WO2017149526A2 (en) * 2016-03-04 2017-09-08 May Patents Ltd. A method and apparatus for cooperative usage of multiple distance meters
JP6541623B2 (ja) * 2016-06-20 2019-07-10 東京エレクトロン株式会社 プラズマ処理装置、及び波形補正方法
JP6770868B2 (ja) * 2016-10-26 2020-10-21 東京エレクトロン株式会社 プラズマ処理装置のインピーダンス整合のための方法
JP6793019B2 (ja) * 2016-11-28 2020-12-02 東京エレクトロン株式会社 プラズマ処理装置
JP6858095B2 (ja) * 2017-08-18 2021-04-14 東京エレクトロン株式会社 マイクロ波出力装置及びプラズマ処理装置
WO2019055894A1 (en) * 2017-09-18 2019-03-21 Intel Corporation TIME-ENCODED DATA COMMUNICATION PROTOCOL, APPARATUS AND METHOD FOR PRODUCING AND RECEIVING DATA SIGNAL
JP2019091526A (ja) * 2017-11-10 2019-06-13 東京エレクトロン株式会社 パルスモニタ装置及びプラズマ処理装置
JP6910320B2 (ja) * 2018-05-01 2021-07-28 東京エレクトロン株式会社 マイクロ波出力装置及びプラズマ処理装置
US11432369B2 (en) * 2018-06-19 2022-08-30 Apple Inc. Reference signal and control information processing in 5G-NR wireless systems
JP2020016592A (ja) * 2018-07-27 2020-01-30 東京エレクトロン株式会社 検出装置、マイクロ波出力装置及びプラズマ処理装置
CN111524782B (zh) * 2019-02-05 2023-07-25 东京毅力科创株式会社 等离子体处理装置
JP7122268B2 (ja) * 2019-02-05 2022-08-19 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020115301A1 (en) 1995-10-13 2002-08-22 Savas Stephen E. Pulsed plasma processing of semiconductor substrates
JP2013535074A (ja) 2010-06-11 2013-09-09 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド 基板プラズマ処理技術
JP2017204467A (ja) 2016-05-10 2017-11-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2020126998A (ja) 2019-02-05 2020-08-20 東京エレクトロン株式会社 プラズマ処理装置
JP2021036612A (ja) 2019-02-05 2021-03-04 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
CN111524781A (zh) 2020-08-11
US11087960B2 (en) 2021-08-10
KR20200096734A (ko) 2020-08-13
JP2020126776A (ja) 2020-08-20
CN111524781B (zh) 2024-06-14
US20200251308A1 (en) 2020-08-06

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