JP7120545B2 - 成膜装置、成膜方法及びこれを用いる有機ｅｌ表示装置の製造方法 - Google Patents

成膜装置、成膜方法及びこれを用いる有機ｅｌ表示装置の製造方法 Download PDF

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JP7120545B2
JP7120545B2 JP2018160255A JP2018160255A JP7120545B2 JP 7120545 B2 JP7120545 B2 JP 7120545B2 JP 2018160255 A JP2018160255 A JP 2018160255A JP 2018160255 A JP2018160255 A JP 2018160255A JP 7120545 B2 JP7120545 B2 JP 7120545B2
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substrate
support member
film forming
forming apparatus
supporting
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JP2019117922A (ja
JP2019117922A5 (https=
Inventor
一史 柏倉
博 石井
映之 細谷
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2018160255A 2017-12-26 2018-08-29 成膜装置、成膜方法及びこれを用いる有機ｅｌ表示装置の製造方法 Active JP7120545B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0180325 2017-12-26
KR1020170180325A KR102010158B1 (ko) 2017-12-26 2017-12-26 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법

Publications (3)

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JP2019117922A JP2019117922A (ja) 2019-07-18
JP2019117922A5 JP2019117922A5 (https=) 2021-02-04
JP7120545B2 true JP7120545B2 (ja) 2022-08-17

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JP (1) JP7120545B2 (https=)
KR (1) KR102010158B1 (https=)
CN (1) CN109957774A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101933807B1 (ko) * 2017-11-29 2018-12-28 캐논 톡키 가부시키가이샤 성막장치 및 이를 사용한 유기 el 표시장치의 제조방법
JP7057335B2 (ja) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 基板保持装置、基板処理装置、基板保持方法、成膜方法、及び電子デバイスの製造方法
JP7057337B2 (ja) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 基板剥離装置、基板処理装置、及び基板剥離方法
CN113005398B (zh) * 2019-12-20 2023-04-07 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
JP7299202B2 (ja) * 2020-09-30 2023-06-27 キヤノントッキ株式会社 成膜装置、基板吸着方法、及び電子デバイスの製造方法
JP7744140B2 (ja) 2021-02-26 2025-09-25 キヤノントッキ株式会社 成膜装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004176124A (ja) 2002-11-27 2004-06-24 Ulvac Japan Ltd アライメント装置、成膜装置及びアライメント方法
WO2005091683A1 (en) 2004-03-22 2005-09-29 Doosan Dnd Co., Ltd. Substrate depositing method and organic material depositing apparatus
WO2010106958A1 (ja) 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
JP2014120740A (ja) 2012-12-19 2014-06-30 Tokyo Electron Ltd 基板処理装置、及び基板の張り付け又は剥離方法
JP2016085460A (ja) 2014-10-28 2016-05-19 株式会社半導体エネルギー研究所 機能パネル、機能パネルの作製方法、モジュール、情報処理装置
WO2016199759A1 (ja) 2015-06-12 2016-12-15 株式会社アルバック 基板保持装置、成膜装置及び基板保持方法
JP2019102802A (ja) 2017-11-29 2019-06-24 キヤノントッキ株式会社 成膜装置、成膜方法及びそれを用いられる有機ｅｌ表示装置の製造方法
JP2019102801A (ja) 2017-11-29 2019-06-24 キヤノントッキ株式会社 成膜装置及びそれを用いた有機ｅｌ表示装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343507A (ja) * 1992-06-10 1993-12-24 Fujitsu Ltd 静電吸着方法
JP2000243816A (ja) * 1999-02-22 2000-09-08 Hitachi Electronics Eng Co Ltd 基板チャック装置
KR102490641B1 (ko) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 증착 장치 및 증착 방법

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004176124A (ja) 2002-11-27 2004-06-24 Ulvac Japan Ltd アライメント装置、成膜装置及びアライメント方法
WO2005091683A1 (en) 2004-03-22 2005-09-29 Doosan Dnd Co., Ltd. Substrate depositing method and organic material depositing apparatus
WO2010106958A1 (ja) 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
JP2014120740A (ja) 2012-12-19 2014-06-30 Tokyo Electron Ltd 基板処理装置、及び基板の張り付け又は剥離方法
JP2016085460A (ja) 2014-10-28 2016-05-19 株式会社半導体エネルギー研究所 機能パネル、機能パネルの作製方法、モジュール、情報処理装置
WO2016199759A1 (ja) 2015-06-12 2016-12-15 株式会社アルバック 基板保持装置、成膜装置及び基板保持方法
JP2019102802A (ja) 2017-11-29 2019-06-24 キヤノントッキ株式会社 成膜装置、成膜方法及びそれを用いられる有機ｅｌ表示装置の製造方法
JP2019102801A (ja) 2017-11-29 2019-06-24 キヤノントッキ株式会社 成膜装置及びそれを用いた有機ｅｌ表示装置の製造方法

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KR102010158B1 (ko) 2019-08-12
KR20190078432A (ko) 2019-07-04
JP2019117922A (ja) 2019-07-18
CN109957774A (zh) 2019-07-02

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