JP7118658B2 - 撮像装置、撮像システム、移動体 - Google Patents

撮像装置、撮像システム、移動体 Download PDF

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Publication number
JP7118658B2
JP7118658B2 JP2018022404A JP2018022404A JP7118658B2 JP 7118658 B2 JP7118658 B2 JP 7118658B2 JP 2018022404 A JP2018022404 A JP 2018022404A JP 2018022404 A JP2018022404 A JP 2018022404A JP 7118658 B2 JP7118658 B2 JP 7118658B2
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chip
imaging device
ramp signal
input
transmission line
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Japanese (ja)
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JP2019140535A5 (enExample
JP2019140535A (ja
Inventor
恒一 中村
昌弘 小林
秀央 小林
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2018022404A priority Critical patent/JP7118658B2/ja
Priority to US16/268,269 priority patent/US11108985B2/en
Publication of JP2019140535A publication Critical patent/JP2019140535A/ja
Publication of JP2019140535A5 publication Critical patent/JP2019140535A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/628—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for reducing horizontal stripes caused by saturated regions of CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H04N25/69—SSIS comprising testing or correcting structures for circuits other than pixel cells
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2018022404A 2018-02-09 2018-02-09 撮像装置、撮像システム、移動体 Active JP7118658B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018022404A JP7118658B2 (ja) 2018-02-09 2018-02-09 撮像装置、撮像システム、移動体
US16/268,269 US11108985B2 (en) 2018-02-09 2019-02-05 Imaging device, imaging system, and movable object

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018022404A JP7118658B2 (ja) 2018-02-09 2018-02-09 撮像装置、撮像システム、移動体

Publications (3)

Publication Number Publication Date
JP2019140535A JP2019140535A (ja) 2019-08-22
JP2019140535A5 JP2019140535A5 (enExample) 2021-04-01
JP7118658B2 true JP7118658B2 (ja) 2022-08-16

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JP2018022404A Active JP7118658B2 (ja) 2018-02-09 2018-02-09 撮像装置、撮像システム、移動体

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US (1) US11108985B2 (enExample)
JP (1) JP7118658B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7676319B2 (ja) * 2019-11-29 2025-05-14 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
US12477854B2 (en) * 2023-03-08 2025-11-18 Semiconductor Components Industries, Llc Image sensor signal path routing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168880A (ja) 2012-02-16 2013-08-29 Sony Corp 比較器、ａｄ変換器、固体撮像装置、カメラシステム、および電子機器
WO2016009832A1 (ja) 2014-07-14 2016-01-21 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、および比較器の制御方法
JP2018019354A (ja) 2016-07-29 2018-02-01 キヤノン株式会社 撮像装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6140877A (en) * 1998-12-11 2000-10-31 Micron Technology, Inc. Low power supply CMOS differential amplifier topology
JP2014060573A (ja) 2012-09-18 2014-04-03 Sony Corp 固体撮像素子、制御方法、および電子機器
US10051221B2 (en) 2014-12-25 2018-08-14 Sony Corporation Solid-state imaging device and electronic apparatus
WO2016136448A1 (ja) 2015-02-23 2016-09-01 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、比較器の制御方法、データ書込回路、データ読出回路、およびデータ転送回路
WO2016151837A1 (ja) * 2015-03-26 2016-09-29 オリンパス株式会社 固体撮像装置
KR20160121189A (ko) * 2015-04-10 2016-10-19 삼성전자주식회사 아날로그-디지털 변환기의 선형성을 향상시키는 이미지 센서 및 이를 포함하는 이미지 처리 시스템
US9848140B2 (en) * 2016-03-31 2017-12-19 Omnivision Technologies, Inc. Horizontal banding reduction with ramp generator isolation in an image sensor
US11706538B2 (en) * 2017-02-16 2023-07-18 Sony Semiconductor Solutions Corporation Imaging system and imaging device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168880A (ja) 2012-02-16 2013-08-29 Sony Corp 比較器、ａｄ変換器、固体撮像装置、カメラシステム、および電子機器
WO2016009832A1 (ja) 2014-07-14 2016-01-21 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、および比較器の制御方法
JP2018019354A (ja) 2016-07-29 2018-02-01 キヤノン株式会社 撮像装置

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US11108985B2 (en) 2021-08-31
US20190253653A1 (en) 2019-08-15
JP2019140535A (ja) 2019-08-22

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