JP7113923B2 - トランジスタのチャネル領域を形成する方法、及びメモリアレイを形成する際に使用される方法 - Google Patents
トランジスタのチャネル領域を形成する方法、及びメモリアレイを形成する際に使用される方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 33
- 230000015654 memory Effects 0.000 title description 54
- 238000003491 array Methods 0.000 title description 10
- 239000000463 material Substances 0.000 claims description 180
- 239000011810 insulating material Substances 0.000 claims description 80
- 238000002425 crystallisation Methods 0.000 claims description 22
- 230000008025 crystallization Effects 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 229910004542 HfN Inorganic materials 0.000 claims description 5
- -1 Pr2O3 Inorganic materials 0.000 claims description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- 239000012212 insulator Substances 0.000 description 26
- 239000011232 storage material Substances 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000000903 blocking effect Effects 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910020781 SixOy Inorganic materials 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
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- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- Crystallography & Structural Chemistry (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Description
幾つかの実施形態では、トランジスタは、第1及び第2の対向する側面を有するチャネル材料を含む。ゲートはチャネル材料の第1の側面上にあり、ゲート絶縁体はゲートとチャネル材料の間にある。第1の絶縁材料は、第1及び第2の対向する側面を有し、第1の側面は、チャネル材料の第2の側面に隣接している。第1の絶縁材料とは異なる組成の第2の絶縁材料は、第1の絶縁材料の第2の側面に隣接する。第2の絶縁材料は、(a)、(b)、及び(c)の少なくとも1つを有し、ここで、(a):第1の材料よりも低い酸素拡散率、(b):正味の正電荷、及び(c):第1の材料の少なくとも2倍以上の剪断強度、である。幾つかの実施形態では、メモリセルの高さ方向に延びるストリングのアレイは、そのようなトランジスタを含む。
Claims (10)
- トランジスタのチャネル領域を形成する方法であって、
対向する第1及び第2の側面を有するアモルファスチャネル材料を基板上に形成することと、
結晶化温度未満で、前記アモルファスチャネル材料の前記第2の側面に隣接して第1の絶縁材料を形成することであって、前記結晶化温度以上で前記アモルファスチャネル材料が結晶になり、前記第1の絶縁材料は、対向する第1及び第2の側面を有し、前記第1の絶縁材料の前記第1の側面が、前記アモルファスチャネル材料の前記第2の側面に隣接する、ことと、
前記第1の絶縁材料とは異なる組成の第2の絶縁材料を、前記第1の絶縁材料の前記第2の側面に隣接して形成することと、
前記第1の絶縁材料を隣接させた前記アモルファスチャネル材料を前記結晶化温度以上の温度にさらして、前記アモルファスチャネル材料を結晶チャネル材料に変換することと、
前記アモルファスチャネル材料の前記結晶チャネル材料への変換中に、前記第2の絶縁材料の少なくとも一部分を形成することと、
を含む方法。 - 前記第1の絶縁材料は、Al3O4、ZrO2、HfO2、Pr2O3、及びTa2O5のうちの少なくとも一種を含む、請求項1に記載の方法。
- 前記アモルファスチャネル材料は、中空管として形成される、請求項1に記載の方法。
- 前記第1の絶縁材料は、前記アモルファスチャネル材料の前記中空管の内側に、中空管として形成される、請求項3に記載の方法。
- 前記中空管は、高さ方向に延びる、請求項3に記載の方法。
- 前記中空管は、垂直又は垂直から10°以内である、請求項5に記載の方法。
- 前記第2の絶縁材料は、下記(a)、(b)、及び(c)のうちの少なくとも1つを有し、ここで、
(a):前記第1の絶縁材料よりも低い酸素拡散率、
(b):正味の正電荷、
(c):前記第1の絶縁材料の少なくとも2倍以上の剪断強度、
である、請求項1に記載の方法。 - 前記第2の絶縁材料は、Si3N4、Al2O3、HfN、HfOxNy(x及びyは、それぞれ0より大きい)、HfYxOy(x及びyは、それぞれ0より大きい)、BN、AlN、SiC、ダイヤモンド、ダイヤモンドライクカーボン、SixNyHz(x、y、及びzは、それぞれ0より大きい)、HfxNyHz(x、y、及びzは、それぞれ0より大きい)、HfOxNyHz(x、y、及びzは、それぞれ0より大きい)、HfYxOyHz(x、y、及びzは、それぞれ0より大きい)、BNxHy(x及びyは、それぞれ0より大きい)、及びAlNxHy(x及びyは、それぞれ0より大きい)のうちの少なくとも一種を含む、請求項1に記載の方法。
- 前記アモルファスチャネル材料の前記結晶チャネル材料への変換中に前記第2の絶縁材料の少なくとも一部分を形成することは、前記第2の絶縁材料の一部分のみを形成する、請求項1に記載の方法。
- 前記アモルファスチャネル材料の前記結晶チャネル材料への変換中に前記第2の絶縁材料の少なくとも一部分を形成することは、前記第2の絶縁材料の全部を形成する、請求項1に記載の方法。
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PCT/US2018/065437 WO2019133274A1 (en) | 2017-12-27 | 2018-12-13 | Methods of forming a channel region of a transistor and method used in forming a memory array |
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US10446681B2 (en) | 2017-07-10 | 2019-10-15 | Micron Technology, Inc. | NAND memory arrays, and devices comprising semiconductor channel material and nitrogen |
US11587789B2 (en) | 2020-03-06 | 2023-02-21 | Applied Materials, Inc. | System and method for radical and thermal processing of substrates |
KR20220004857A (ko) * | 2020-07-02 | 2022-01-12 | 삼성디스플레이 주식회사 | 표시 장치 |
US11538919B2 (en) * | 2021-02-23 | 2022-12-27 | Micron Technology, Inc. | Transistors and arrays of elevationally-extending strings of memory cells |
US11856766B2 (en) * | 2021-08-02 | 2023-12-26 | Micron Technology, Inc. | Memory cell having programmable material comprising at least two regions comprising SiNx |
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