JP7108602B2 - 双方向スイッチ及びそれを備える双方向スイッチ装置 - Google Patents
双方向スイッチ及びそれを備える双方向スイッチ装置 Download PDFInfo
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- JP7108602B2 JP7108602B2 JP2019509818A JP2019509818A JP7108602B2 JP 7108602 B2 JP7108602 B2 JP 7108602B2 JP 2019509818 A JP2019509818 A JP 2019509818A JP 2019509818 A JP2019509818 A JP 2019509818A JP 7108602 B2 JP7108602 B2 JP 7108602B2
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- bidirectional switch
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Description
本実施形態の双方向スイッチ8a及び双方向スイッチ装置9aについて、図1~3Bを参照して説明する。双方向スイッチ8a及び双方向スイッチ装置9aは、例えば、交流-交流電力変換を行うマトリクスコンバータ等に使用可能であるが、これに限らず、例えば、リレー、照明装置の調光用の交流スイッチ等にも使用可能である。
本実施形態の双方向スイッチ8c及び双方向スイッチ装置9cについて、図5を参照して説明する。本実施形態の双方向スイッチ8c及び双方向スイッチ装置9cでは、接続部5bの構成が、実施形態1の接続部5aの構成と相違する。本実施形態の双方向スイッチ8c及び双方向スイッチ装置9cに関し、実施形態1の双方向スイッチ8a及び双方向スイッチ装置9aと重複する構成については、同じ符号を付し、詳しい説明は省略する。
本実施形態の双方向スイッチ8d及び双方向スイッチ装置9dについて、図6を参照して説明する。本実施形態の双方向スイッチ8d及び双方向スイッチ装置9dでは、第1導体部61c、第2導体部62c及び接続部5cが、実施形態1の第1導体部61a、第2導体部62b及び接続部5aと相違する。また、本実施形態の双方向スイッチ8dは、電気絶縁基板71を有していない点でも実施形態1の双方向スイッチ8aと相違する。
本実施形態の双方向スイッチ8f及び双方向スイッチ装置9fについて、図8及び9を参照して説明する。本実施形態の双方向スイッチ8f及び双方向スイッチ装置9fに関し、実施形態1の双方向スイッチ8a及び双方向スイッチ装置9aと重複する構成については、同じ符号を付し、詳しい説明は省略する。
10 第1導電性層
101 表面
102 裏面
11 第1半導体層
11a 表面
12 第1基板
13 第1導電性ダイ
1D 第1ドレイン電極
1G 第1ゲート電極
1S 第1ソース電極
2 第2横型トランジスタ
20 第2導電性層
201 表面
202 裏面
21 第2半導体層
21a 表面
22 第2基板
23 第2導電性ダイ
2S 第2ソース電極
2D 第2ドレイン電極
2G 第2ゲート電極
2S 第2ソース電極
5a,5b,5c 接続部
5ba 導電性基板
5bb ワイヤ
5bc ワイヤ
61a,61c 第1導体部
62a,62c 第2導体部
5da 導電性ダイ
8a,8b,8c,8d,8f,8g 双方向スイッチ
70 パッケージボディ
9a,9b,9c,9d,9f,9g 双方向スイッチ装置
D1 第1ドレイン端子
D2 第2ドレイン端子
G1 第1ゲート端子
G2 第2ゲート端子
S1 第1ソース端子
S2 第2ソース端子
Claims (9)
- 厚さ方向において互いに反対側にある表面及び裏面を有する第1導電性層と、
厚さ方向において互いに反対側にある表面及び裏面を有する第2導電性層と、
前記第1導電性層の前記表面上にある第1半導体層と、前記第1半導体層における前記第1導電性層側とは反対側の表面に配置された第1ソース電極、第1ゲート電極及び第1ドレイン電極と、を有する第1横型トランジスタと、
前記第2導電性層の前記表面上にある第2半導体層と、前記第2半導体層における前記第2導電性層側とは反対側の表面に配置された第2ソース電極、第2ゲート電極及び第2ドレイン電極と、を有する第2横型トランジスタと、
前記第1横型トランジスタと前記第2横型トランジスタとを逆直列に接続している接続部と、
前記第1横型トランジスタの前記第1ソース電極と前記第1導電性層とを電気的に接続している第1導体部と、
前記第2横型トランジスタの前記第2ソース電極と前記第2導電性層とを電気的に接続している第2導体部と、を備え、
前記第1導電性層は、
第1導電性ダイと、前記第1導電性層の厚さ方向において、前記第1導電性ダイと前記第1半導体層との間にあり、前記第1導電性ダイに接合されている導電性の第1基板と、を含み、
前記第1ソース電極は、前記第1導電性ダイと電気的に接続され、前記第1導電性ダイを介して前記第1基板と電気的に接続され、
前記第2導電性層は、
第2導電性ダイと、前記第2導電性層の厚さ方向において、前記第2導電性ダイと前記第2半導体層との間にあり、前記第2導電性ダイに接合されている導電性の第2基板と、を含み、
前記第2ソース電極は、前記第2導電性ダイと電気的に接続され、前記第2導電性ダイを介して前記第2基板と電気的に接続されている、
ことを特徴とする双方向スイッチ。 - 前記接続部は、前記第1ドレイン電極と前記第2ドレイン電極とを電気的に接続することで、前記第1横型トランジスタと前記第2横型トランジスタとを逆直列に接続している、
ことを特徴とする請求項1に記載の双方向スイッチ。 - 前記接続部は、前記第1ソース電極と前記第2ソース電極とを電気的に接続することで、前記第1横型トランジスタと前記第2横型トランジスタとを逆直列に接続している、
ことを特徴とする請求項1に記載の双方向スイッチ。 - 厚さ方向において互いに反対側にある表面及び裏面を有する第1導電性層と、
厚さ方向において互いに反対側にある表面及び裏面を有する第2導電性層と、
前記第1導電性層の前記表面上にある第1半導体層と、前記第1半導体層における前記第1導電性層側とは反対側の表面に配置された第1ソース電極、第1ゲート電極及び第1ドレイン電極と、を有する第1横型トランジスタと、
前記第2導電性層の前記表面上にある第2半導体層と、前記第2半導体層における前記第2導電性層側とは反対側の表面に配置された第2ソース電極、第2ゲート電極及び第2ドレイン電極と、を有する第2横型トランジスタと、
前記第1横型トランジスタと前記第2横型トランジスタとを逆直列に接続している接続部と、
前記第1横型トランジスタの前記第1ソース電極と前記第1導電性層とを電気的に接続している第1導体部と、
前記第2横型トランジスタの前記第2ソース電極と前記第2導電性層とを電気的に接続している第2導体部と、を備え、
前記第1導体部及び前記第2導体部の各々は、ワイヤである、
ことを特徴とする双方向スイッチ。 - 前記第1導体部及び前記第2導体部の各々は、導体層である、
ことを特徴とする請求項1~3のいずれか一項に記載の双方向スイッチ。 - 厚さ方向において互いに反対側にある表面及び裏面を有する第1導電性層と、
厚さ方向において互いに反対側にある表面及び裏面を有する第2導電性層と、
前記第1導電性層の前記表面上にある第1半導体層と、前記第1半導体層における前記第1導電性層側とは反対側の表面に配置された第1ソース電極、第1ゲート電極及び第1ドレイン電極と、を有する第1横型トランジスタと、
前記第2導電性層の前記表面上にある第2半導体層と、前記第2半導体層における前記第2導電性層側とは反対側の表面に配置された第2ソース電極、第2ゲート電極及び第2ドレイン電極と、を有する第2横型トランジスタと、
前記第1横型トランジスタと前記第2横型トランジスタとを逆直列に接続している接続部と、
前記第1横型トランジスタの前記第1ソース電極と前記第1導電性層とを電気的に接続している第1導体部と、
前記第2横型トランジスタの前記第2ソース電極と前記第2導電性層とを電気的に接続している第2導体部と、を備え、
前記接続部は、前記第1ドレイン電極と前記第2ドレイン電極とを電気的に接続することで、前記第1横型トランジスタと前記第2横型トランジスタとを逆直列に接続しており、
前記接続部は、前記第1導電性層の前記裏面と前記第2導電性層の前記裏面とに対向する1つの導電性基板と、前記第1ドレイン電極と前記導電性基板とを接続しているワイヤと、前記第2ドレイン電極と前記導電性基板とを接続しているワイヤと、を含み、
前記第1導電性層と前記導電性基板との間にある第1電気絶縁層と、前記第2導電性層と前記導電性基板との間にある第2電気絶縁層と、を更に備える、
ことを特徴とする双方向スイッチ。 - 前記接続部は、導体層である、
ことを特徴とする請求項1~5のいずれか一項に記載の双方向スイッチ。 - 請求項1~7の何れか一項に記載の双方向スイッチと、
前記第1ゲート電極に電気的に接続された第1ゲート端子と、
前記第2ゲート電極に電気的に接続された第2ゲート端子と、
前記双方向スイッチの少なくとも一部、前記第1ゲート端子、及び前記第2ゲート端子が収納されるパッケージボディと、を備える、
ことを特徴とする双方向スイッチ装置。 - 双方向スイッチと、
第1ゲート端子と、
第2ゲート端子と、
前記双方向スイッチの少なくとも一部、前記第1ゲート端子、及び前記第2ゲート端子が収納されるパッケージボディと、を備え、
前記双方向スイッチは、
厚さ方向において互いに反対側にある表面及び裏面を有する第1導電性層と、
厚さ方向において互いに反対側にある表面及び裏面を有する第2導電性層と、
前記第1導電性層の前記表面上にある第1半導体層と、前記第1半導体層における前記第1導電性層側とは反対側の表面に配置された第1ソース電極、第1ゲート電極及び第1ドレイン電極と、を有する第1横型トランジスタと、
前記第2導電性層の前記表面上にある第2半導体層と、前記第2半導体層における前記第2導電性層側とは反対側の表面に配置された第2ソース電極、第2ゲート電極及び第2ドレイン電極と、を有する第2横型トランジスタと、
前記第1横型トランジスタと前記第2横型トランジスタとを逆直列に接続している接続部と、
前記第1横型トランジスタの前記第1ソース電極と前記第1導電性層とを電気的に接続している第1導体部と、
前記第2横型トランジスタの前記第2ソース電極と前記第2導電性層とを電気的に接続している第2導体部と、を含み、
前記第1ゲート端子は、前記第1ゲート電極に電気的に接続されており、
前記第2ゲート端子は、前記第2ゲート電極に電気的に接続されており、
前記双方向スイッチの前記第1導体部の一部が前記パッケージボディの外部にあり、
前記双方向スイッチの前記第2導体部の一部が前記パッケージボディの外部にある、
ことを特徴とする双方向スイッチ装置。
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- 2018-03-26 CN CN201880023381.1A patent/CN110476232B/zh active Active
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JP2010016093A (ja) | 2008-07-02 | 2010-01-21 | Sharp Corp | 半導体装置 |
JP2011129924A (ja) | 2009-12-17 | 2011-06-30 | Infineon Technologies Austria Ag | 金属キャリアを有する半導体デバイスおよび製造方法 |
US20150115313A1 (en) | 2013-10-31 | 2015-04-30 | Infineon Technologies Austria Ag | Semiconductor Device Package |
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