JP7106383B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7106383B2
JP7106383B2 JP2018141005A JP2018141005A JP7106383B2 JP 7106383 B2 JP7106383 B2 JP 7106383B2 JP 2018141005 A JP2018141005 A JP 2018141005A JP 2018141005 A JP2018141005 A JP 2018141005A JP 7106383 B2 JP7106383 B2 JP 7106383B2
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insulator
oxide
conductor
transistor
region
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JP2019033253A (ja
JP2019033253A5 (ja
Inventor
舜平 山崎
大介 松林
涼太 方堂
大吾 伊藤
大章 本多
悟 岡本
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Noodles (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2018141005A 2017-08-04 2018-07-27 半導体装置 Active JP7106383B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022112457A JP7573570B2 (ja) 2017-08-04 2022-07-13 半導体装置

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JP2017151412 2017-08-04
JP2017151412 2017-08-04

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JP2019033253A JP2019033253A (ja) 2019-02-28
JP2019033253A5 JP2019033253A5 (ja) 2021-08-05
JP7106383B2 true JP7106383B2 (ja) 2022-07-26

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US (1) US11101386B2 (ko)
JP (1) JP7106383B2 (ko)
KR (2) KR102631152B1 (ko)
CN (2) CN110998809B (ko)
TW (2) TWI847397B (ko)
WO (1) WO2019025912A1 (ko)

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US11515873B2 (en) 2018-06-29 2022-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10924090B2 (en) * 2018-07-20 2021-02-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising holding units
US11211461B2 (en) 2018-12-28 2021-12-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and memory device
US20220189766A1 (en) 2019-04-10 2022-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN110192269A (zh) * 2019-04-15 2019-08-30 长江存储科技有限责任公司 三维nand存储器件与多个功能芯片的集成
US12068198B2 (en) 2019-05-10 2024-08-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US11183242B1 (en) 2020-05-18 2021-11-23 Micron Technology, Inc. Preventing parasitic current during program operations in memory

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JP2013219345A (ja) 2012-03-16 2013-10-24 Semiconductor Energy Lab Co Ltd 半導体装置
US20170012139A1 (en) 2015-07-08 2017-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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