JP2019033253A - 半導体装置、および半導体装置の作製方法 - Google Patents
半導体装置、および半導体装置の作製方法 Download PDFInfo
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- JP2019033253A JP2019033253A JP2018141005A JP2018141005A JP2019033253A JP 2019033253 A JP2019033253 A JP 2019033253A JP 2018141005 A JP2018141005 A JP 2018141005A JP 2018141005 A JP2018141005 A JP 2018141005A JP 2019033253 A JP2019033253 A JP 2019033253A
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
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- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
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Abstract
Description
以下では、本発明の一態様に係るトランジスタ200を有する半導体装置の一例について説明する。
図1(A)、図1(B)、および図1(C)は、本発明の一態様に係るトランジスタ200、およびトランジスタ200周辺の上面図および断面図である。
図1に示すように、トランジスタ200は、基板(図示しない。)の上に配置された絶縁体214と、絶縁体214の上に配置された絶縁体216と、絶縁体214および絶縁体216に埋め込まれるように配置された導電体205と、絶縁体216と導電体205の上に配置された絶縁体220と、絶縁体220の上に配置された絶縁体222と、絶縁体222の上に配置された絶縁体224と、絶縁体224の上に配置された絶縁体226と、絶縁体226の上に配置された酸化物230aと、酸化物230aの上に配置された酸化物230bと、酸化物230bの上に配置された導電体242と、絶縁体226、酸化物230a、酸化物230b、および導電体242を覆う絶縁体244と、絶縁体244の上に配置され、開口部を有する絶縁体280と、該開口部内で絶縁体244の上に配置された絶縁体273と、酸化物230bの上面と、導電体242の側面と、絶縁体244の側面と、絶縁体273の一方の側面と、に接するように設けられた酸化物230cと、酸化物230cの内側に設けられた絶縁体250と、絶縁体250の内側に設けられた絶縁体272と、絶縁体272の内側に設けられた導電体260aと、導電体260aの内側に埋め込まれるように設けられた導電体260bと、絶縁体273の一方の側面と、酸化物230cの上面と、絶縁体250の上面と、絶縁体272の上面と、導電体260aの上面と、導電体260bの上面と、に接するように設けられた絶縁体270と、少なくとも絶縁体273の上面、および絶縁体273の他方の側面に接し、導電体242と電気的に接続する導電体240と、を有する。
以下では、半導体装置に用いることができる構成材料について説明する。
トランジスタ200を形成する基板としては、例えば、絶縁体基板、半導体基板、または導電体基板を用いればよい。絶縁体基板としては、例えば、ガラス基板、石英基板、サファイア基板、安定化ジルコニア基板(イットリア安定化ジルコニア基板など)、樹脂基板などがある。また、半導体基板としては、例えば、シリコン、ゲルマニウムなどの半導体基板、または炭化シリコン、シリコンゲルマニウム、ヒ化ガリウム、リン化インジウム、酸化亜鉛、酸化ガリウムからなる化合物半導体基板などがある。さらには、前述の半導体基板内部に絶縁体領域を有する半導体基板、例えば、SOI(Silicon On Insulator)基板などがある。導電体基板としては、黒鉛基板、金属基板、合金基板、導電性樹脂基板などがある。または、金属の窒化物を有する基板、金属の酸化物を有する基板などがある。さらには、絶縁体基板に導電体または半導体が設けられた基板、半導体基板に導電体または絶縁体が設けられた基板、導電体基板に半導体または絶縁体が設けられた基板などがある。または、これらの基板に素子が設けられたものを用いてもよい。基板に設けられる素子としては、容量素子、抵抗素子、スイッチ素子、発光素子、記憶素子などがある。
絶縁体としては、絶縁性を有する酸化物、窒化物、酸化窒化物、窒化酸化物、金属酸化物、金属酸化窒化物、金属窒化酸化物などがある。
導電体としては、アルミニウム、クロム、銅、銀、金、白金、タンタル、ニッケル、チタン、モリブデン、タングステン、ハフニウム、バナジウム、ニオブ、マンガン、マグネシウム、ジルコニウム、ベリリウム、インジウム、ルテニウム、イリジウム、ストロンチウム、ランタンなどから選ばれた金属元素を1種以上含む材料を用いることができる。また、リン等の不純物元素を含有させた多結晶シリコンに代表される、電気伝導度が高い半導体、ニッケルシリサイドなどのシリサイドを用いてもよい。
酸化物230として、酸化物半導体として機能する金属酸化物(以下、酸化物半導体ともいう。)を用いることが好ましい。以下では、本発明に係る酸化物230に適用可能な金属酸化物について説明する。
以下では、本発明の一態様で開示されるトランジスタに用いることができるCAC(Cloud−Aligned Composite)−OSの構成について説明する。
酸化物半導体(金属酸化物)は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、例えば、CAAC−OS(c−axis aligned crystalline oxide semiconductor)、多結晶酸化物半導体、nc−OS(nanocrystalline oxide semiconductor)、擬似非晶質酸化物半導体(a−like OS:amorphous−like oxide semiconductor)、および非晶質酸化物半導体などがある。
続いて、上記金属酸化物をトランジスタのチャネル形成領域に用いる場合について説明する。
ここで、金属酸化物中における各不純物の影響について説明する。
次に、本発明に係るトランジスタ200を有する半導体装置について、作製方法を図4乃至図19を用いて説明する。また、図4乃至図19において、各図の(A)は上面図を示す。また、各図の(B)は、(A)に示すA1−A2の一点鎖線で示す部位に対応する断面図であり、トランジスタ200のチャネル長方向の断面図でもある。また、各図の(C)は、(A)にA3−A4の一点鎖線で示す部位に対応する断面図であり、トランジスタ200のチャネル幅方向の断面図でもある。なお、各図の(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
以下では、図20を用いて、先の<半導体装置の構成例>で示したものとは異なる、本発明の一態様に係るトランジスタ200を有する半導体装置の一例について説明する。
以下では、図21を用いて、先の<半導体装置の構成例>で示したものとは異なる、本発明の一態様に係るトランジスタ200を有する半導体装置の一例について説明する。
以下では、図22を用いて、先の<半導体装置の構成例>で示したものとは異なる、本発明の一態様に係るトランジスタ200を有する半導体装置の一例について説明する。
以下では、図23を用いて、先の<半導体装置の構成例>で示したものとは異なる、本発明の一態様に係るトランジスタ200を有する半導体装置の一例について説明する。
本実施の形態では、上記実施の形態とは異なる、記憶装置として機能する半導体装置の一形態を、図24乃至図27を用いて説明する。
図24(A)(B)に記憶装置を構成するセル600を示す。セル600は、トランジスタ200a、トランジスタ200b、容量素子100a、および容量素子100bを有している。図24(A)は、セル600の上面図である。また、図24(B)は、図24(A)にA1−A2の一点鎖線で示す部位の断面図である。なお、図24(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図24(A)(B)に示すように、容量素子100aは、トランジスタ200aと重畳する領域に設ける。同様に、容量素子100bは、トランジスタ200bと重畳する領域に設ける。なお、容量素子100bは、容量素子100aが有する構造と、それぞれ対応する構造を有する。以下において、容量素子100aの詳細な構造について説明するが、特にことわりが無い限り容量素子100bについては、容量素子100aの説明を参酌することができる。
次に、上記のセルを行列またはマトリクス状に配置した、セルアレイの一例について、図25乃至図27を用いて説明する。
本実施の形態では、上記実施の形態とは異なる、記憶装置として機能する半導体装置の一形態を、図28および図29を用いて説明する。
図28に示す記憶装置は、トランジスタ300と、トランジスタ200、および容量素子100を有している。図28は、トランジスタ200およびトランジスタ300のチャネル長方向の断面図である。図29には、トランジスタ300近傍のトランジスタ300のチャネル幅方向の断面図を示す。
本発明の一態様の記憶装置は、図28に示すようにトランジスタ300、トランジスタ200、容量素子100を有する。トランジスタ200はトランジスタ300の上方に設けられ、容量素子100はトランジスタ300、およびトランジスタ200の上方に設けられている。
本実施の形態では、図30乃至図32を用いて、本発明の一態様に係る、酸化物を半導体に用いたトランジスタ(以下、OSトランジスタと呼ぶ。)、および容量素子が適用されている記憶装置の一例として、NOSRAMについて説明する。NOSRAM(登録商標)とは「Nonvolatile Oxide Semiconductor RAM」の略称であり、ゲインセル型(2T型、3T型)のメモリセルを有するRAMを指す。なお、以下において、NOSRAMのようにOSトランジスタを用いたメモリ装置を、OSメモリと呼ぶ場合がある。
図30にNOSRAMの構成例を示す。図30に示すNOSRAM1600は、メモリセルアレイ1610、コントローラ1640、行ドライバ1650、列ドライバ1660、出力ドライバ1670を有する。なお、NOSRAM1600は、1のメモリセルで多値データを記憶する多値NOSRAMである。
図31(A)はメモリセル1611の構成例を示す回路図である。メモリセル1611は2T型のゲインセルであり、メモリセル1611はワード線WWL、ワード線RWL、ビット線BL、ソース線SL、配線BGLに電気的に接続されている。メモリセル1611は、ノードSN、OSトランジスタMO61、トランジスタMP61、容量素子C61を有する。OSトランジスタMO61は書き込みトランジスタである。トランジスタMP61は読み出しトランジスタであり、例えばpチャネル型Siトランジスタで構成される。容量素子C61はノードSNの電位を保持するための保持容量である。ノードSNはデータの保持ノードであり、ここではトランジスタMP61のゲートに相当する。
本実施の形態では、図33および図34を用いて、本発明の一態様に係る、OSトランジスタ、および容量素子が適用されている記憶装置の一例として、DOSRAMについて説明する。DOSRAM(登録商標)とは、「Dynamic Oxide Semiconductor RAM」の略称であり、1T(トランジスタ)1C(容量)型のメモリセルを有するRAMを指す。DOSRAMも、NOSRAMと同様に、OSメモリが適用されている。
図33にDOSRAMの構成例を示す。図33に示すように、DOSRAM1400は、コントローラ1405、行回路1410、列回路1415、メモリセルおよびセンスアンプアレイ1420(以下、「MC−SAアレイ1420」と呼ぶ。)を有する。
MC−SAアレイ1420は、メモリセルアレイ1422をセンスアンプアレイ1423上に積層した積層構造をもつ。グローバルビット線GBLL、グローバルビット線GBLRはメモリセルアレイ1422上に積層されている。DOSRAM1400では、ビット線の構造に、ローカルビット線とグローバルビット線とで階層化された階層ビット線構造が採用されている。
コントローラ1405は、DOSRAM1400の動作全般を制御する機能を有する。コントローラ1405は、外部からの入力されるコマンド信号を論理演算して、動作モードを決定する機能、決定した動作モードが実行されるように、行回路1410、列回路1415の制御信号を生成する機能、外部から入力されるアドレス信号を保持する機能、内部アドレス信号を生成する機能を有する。
行回路1410は、MC−SAアレイ1420を駆動する機能を有する。デコーダ1411はアドレス信号をデコードする機能を有する。ワード線ドライバ回路1412は、アクセス対象行のワード線WLを選択する選択信号を生成する。
列回路1415は、データ信号WDA[31:0]の入力を制御する機能、データ信号RDA[31:0]の出力を制御する機能を有する。データ信号WDA[31:0]は書き込みデータ信号であり、データ信号RDA[31:0]は読み出しデータ信号である。
本実施の形態では、図35を用いて、上記実施の形態に示す半導体装置を適用した、AIシステムについて説明を行う。
<AIシステムの応用例>
本実施の形態では、上記実施の形態に示すAIシステムの応用例について図36を用いて説明を行う。
本実施の形態では、上記実施の形態に示すAIシステムが組み込まれたICの一例を示す。
<電子機器>
本発明の一態様に係る半導体装置は、様々な電子機器に用いることができる。図38および図39に、本発明の一態様に係る半導体装置を用いた電子機器の具体例を示す。
本実施の形態では、先の実施の形態に示す半導体装置を用いた記憶装置の応用例について説明する。先の実施の形態に示す半導体装置は、例えば、各種電子機器(例えば、情報端末、コンピュータ、スマートフォン、電子書籍端末、デジタルカメラ(ビデオカメラも含む)、録画再生装置、ナビゲーションシステムなど)の記憶装置に適用できる。なお、ここで、コンピュータとは、タブレット型のコンピュータや、ノート型のコンピュータや、デスクトップ型のコンピュータの他、サーバシステムのような大型のコンピュータを含むものである。または、先の実施の形態に示す半導体装置は、メモリカード(例えば、SDカード)、USBメモリ、SSD(ソリッド・ステート・ドライブ)等の各種のリムーバブル記憶装置に適用される。図40にリムーバブル記憶装置の幾つかの構成例を模式的に示す。例えば、先の実施の形態に示す半導体装置は、パッケージングされたメモリチップに加工され、様々なストレージ装置、リムーバブルメモリに用いられる。
100a 容量素子
100b 容量素子
110 導電体
112 導電体
120 導電体
130 絶縁体
140 絶縁体
150 絶縁体
160 導電体
200 トランジスタ
200a トランジスタ
200b トランジスタ
203 導電体
203a 導電体
203b 導電体
205 導電体
205a 導電体
205b 導電体
210 絶縁体
212 絶縁体
214 絶縁体
216 絶縁体
218 導電体
220 絶縁体
222 絶縁体
224 絶縁体
226 絶縁体
230 酸化物
230a 酸化物
230A 酸化膜
230b 酸化物
230B 酸化膜
230c 酸化物
230C 酸化膜
231 領域
231a 領域
231b 領域
232 領域
232a 領域
232b 領域
234 領域
239 領域
240 導電体
240a 導電体
240A 導電膜
240b 導電体
242 導電体
242a 導電体
242A 導電膜
242b 導電体
242B 導電体
243 領域
243a 領域
243b 領域
244 絶縁体
244A 絶縁体
245 開口
246 導電体
246A 導電体
248 導電体
250 絶縁体
250a 絶縁体
250A 絶縁体
250b 絶縁体
250B 絶縁体
250C 絶縁体
252 絶縁体
260 導電体
260a 導電体
260A 導電膜
260b 導電体
260B 導電膜
260C 導電体
270 絶縁体
270A 絶縁体
272 絶縁体
272A 絶縁体
273 絶縁体
273A 絶縁体
280 絶縁体
281 絶縁体
282 絶縁体
286 絶縁体
300 トランジスタ
311 基板
313 半導体領域
314a 低抵抗領域
314b 低抵抗領域
315 絶縁体
316 導電体
320 絶縁体
322 絶縁体
324 絶縁体
326 絶縁体
328 導電体
330 導電体
350 絶縁体
352 絶縁体
354 絶縁体
356 導電体
360 絶縁体
362 絶縁体
364 絶縁体
366 導電体
370 絶縁体
372 絶縁体
374 絶縁体
376 導電体
380 絶縁体
382 絶縁体
384 絶縁体
386 導電体
400 トランジスタ
600 セル
601 セル
1001 配線
1002 配線
1003 配線
1004 配線
1005 配線
1006 配線
1100 USBメモリ
1101 筐体
1102 キャップ
1103 USBコネクタ
1104 基板
1105 メモリチップ
1106 コントローラチップ
1110 SDカード
1111 筐体
1112 コネクタ
1113 基板
1114 メモリチップ
1115 コントローラチップ
1150 SSD
1151 筐体
1152 コネクタ
1153 基板
1154 メモリチップ
1155 メモリチップ
1156 コントローラチップ
1400 DOSRAM
1405 コントローラ
1410 行回路
1411 デコーダ
1412 ワード線ドライバ回路
1413 列セレクタ
1414 センスアンプドライバ回路
1415 列回路
1416 グローバルセンスアンプアレイ
1417 入出力回路
1420 センスアンプアレイ
1422 メモリセルアレイ
1423 センスアンプアレイ
1425 ローカルメモリセルアレイ
1426 ローカルセンスアンプアレイ
1444 スイッチアレイ
1445 メモリセル
1445a メモリセル
1445b メモリセル
1446 センスアンプ
1447 グローバルセンスアンプ
1600 NOSRAM
1610 メモリセルアレイ
1611 メモリセル
1612 メモリセル
1613 メモリセル
1614 メモリセル
1615 メモリセル
1615a メモリセル
1615b メモリセル
1640 コントローラ
1650 行ドライバ
1651 行デコーダ
1652 ワード線ドライバ
1660 列ドライバ
1661 列デコーダ
1662 ドライバ
1663 DAC
1670 出力ドライバ
1671 セレクタ
1672 ADC
1673 出力バッファ
2000 ロボット
2001 演算装置
2002 センサ
2003 ライト
2004 リフト
2005 駆動部
2006 通信手段
2007 スピーカ
2008 マイクロフォン
2009 表示部
2010 発光部
2011 移動機構
3000 システム
3001 ロボット
3002 演算装置
3003 ブーム
3004 アーム
3005 容器
3006 容器
3007 物品
3008 筐体
3009 センサ
3010 通信手段
3011 通信手段
3021 板
3022 バー
3023 板
3024 板
3025 ヘラ
4010 演算部
4011 アナログ演算回路
4012 DOSRAM
4013 NOSRAM
4014 FPGA
4020 制御部
4021 CPU
4022 GPU
4023 PLL
4025 PROM
4026 メモリコントローラ
4027 電源回路
4028 PMU
4030 入出力部
4031 外部記憶制御回路
4032 音声コーデック
4033 映像コーデック
4034 汎用入出力モジュール
4035 通信モジュール
4041 AIシステム
4041_n AIシステム
4041_1 AIシステム
4041A AIシステム
4041B AIシステム
4098 バス線
4099 ネットワーク
7000 AIシステムIC
7001 リード
7002 プリント基板
7003 回路部
7004 実装基板
7031 Siトランジスタ層
7032 配線層
7033 OSトランジスタ層
Claims (10)
- 酸化物と、
前記酸化物上の第1の導電体、および第2の導電体と、
前記酸化物上の第3の導電体と、
前記酸化物と、前記第3の導電体の間に配置され、かつ前記第3の導電体の側面を覆うように配置された第1の絶縁体と、
前記第3の導電体、および前記第1の絶縁体上の第2の絶縁体と、
前記第1の導電体上と、前記第2の絶縁体の側面と、前記第1の絶縁体を介して、前記第3の導電体の側面と、に配置された第3の絶縁体と、
前記第2の導電体上と、前記第2の絶縁体の側面と、前記第1の絶縁体を介して、前記第3の導電体の側面と、に配置された第4の絶縁体と、
前記第3の絶縁体の上面、および側面に接し、かつ前記第1の導電体と電気的に接続する第4の導電体と、
前記第4の絶縁体の上面、および側面に接し、かつ前記第2の導電体と電気的に接続する第5の導電体と、
を有することを特徴とする半導体装置。 - 請求項1において、
前記第1の絶縁体は、前記酸化物と、前記第3の導電体の間において、第1の膜厚を有し、前記第1の導電体または前記第2の導電体と、前記第3の導電体の間において、第2の膜厚を有し、
前記第1の膜厚は、前記第2の膜厚より薄いことを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第1の絶縁体は、前記酸化物と、前記第3の導電体の間において、第5の絶縁体を有し、前記第1の導電体または前記第2の導電体と、前記第3の導電体の間において、前記第5の絶縁体、および第6の絶縁体を有することを特徴とする半導体装置。 - 請求項1乃至請求項3のいずれか一項において、
前記半導体装置は、さらに
第7の絶縁体と、
第8の絶縁体と、を有し、
前記第7の絶縁体は、前記第1の導電体と、前記第3の絶縁体の間に設けられ、
前記第7の絶縁体は、アルミニウムおよびハフニウムの少なくとも一方を含む酸化物であり、
前記第8の絶縁体は、前記第2の導電体と、前記第4の絶縁体の間に設けられ、
前記第8の絶縁体は、アルミニウムおよびハフニウムの少なくとも一方を含む酸化物である、ことを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一項において、
前記半導体装置は、さらに
第9の絶縁体を有し、
前記第9の絶縁体は、前記第3の導電体と、前記第1の絶縁体の間に設けられ、
前記第9の絶縁体は、アルミニウムおよびハフニウムの少なくとも一方を含む酸化物である、ことを特徴とする半導体装置。 - 請求項1乃至請求項5のいずれか一項において、
前記第2の絶縁体は、アルミニウムおよびハフニウムの少なくとも一方を含む酸化物、またはシリコンを含む窒化物、を含むことを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一項において、
前記第3の絶縁体、および前記第4の絶縁体は、アルミニウムおよびハフニウムの少なくとも一方を含む酸化物、またはシリコンを含む窒化物、を含むことを特徴とする半導体装置。 - 請求項1乃至請求項7のいずれか一項において、
前記酸化物は、Inと、元素M(MはAl、Ga、Y、またはSn)と、Znと、を有する、
ことを特徴とする半導体装置。 - 請求項1乃至請求項8のいずれか一項において、
前記第1の導電体、および前記第2の導電体は、アルミニウム、クロム、銅、銀、金、白金、タンタル、ニッケル、チタン、モリブデン、タングステン、ハフニウム、バナジウム、ニオブ、マンガン、マグネシウム、ジルコニウム、ベリリウム、インジウム、ルテニウム、イリジウム、ストロンチウム、ランタンの少なくとも一を有する、ことを特徴とする半導体装置。 - 請求項1乃至請求項9のいずれか一項において、
前記第1の導電体、および前記第2の導電体は、窒化タンタル、窒化チタン、チタンとアルミニウムを含む窒化物、タンタルとアルミニウムを含む窒化物、酸化ルテニウム、窒化ルテニウム、ストロンチウムとルテニウムを含む酸化物、ランタンとニッケルを含む酸化物の少なくとも一を有する、ことを特徴とする半導体装置。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020208457A1 (ja) * | 2019-04-10 | 2020-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11289487B2 (en) * | 2018-02-23 | 2022-03-29 | Micron Technology, Inc. | Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods |
US11515873B2 (en) | 2018-06-29 | 2022-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US10924090B2 (en) * | 2018-07-20 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising holding units |
US11211461B2 (en) | 2018-12-28 | 2021-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
EP3891784A4 (en) * | 2019-04-15 | 2022-08-17 | Yangtze Memory Technologies Co., Ltd. | INTEGRATION OF NON-AND THREE-DIMENSIONAL MEMORY DEVICES WITH MULTIPLE FUNCTIONAL CHIPS |
US11183242B1 (en) * | 2020-05-18 | 2021-11-23 | Micron Technology, Inc. | Preventing parasitic current during program operations in memory |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013219345A (ja) * | 2012-03-16 | 2013-10-24 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US20170012139A1 (en) * | 2015-07-08 | 2017-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6333229B1 (en) | 2000-03-13 | 2001-12-25 | International Business Machines Corporation | Method for manufacturing a field effect transitor (FET) having mis-aligned-gate structure |
US6660598B2 (en) | 2002-02-26 | 2003-12-09 | International Business Machines Corporation | Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region |
JP2004152790A (ja) * | 2002-10-28 | 2004-05-27 | Toshiba Corp | 半導体装置、及び、半導体装置の製造方法 |
US6673683B1 (en) | 2002-11-07 | 2004-01-06 | Taiwan Semiconductor Manufacturing Co., Ltd | Damascene gate electrode method for fabricating field effect transistor (FET) device with ion implanted lightly doped extension regions |
WO2011068028A1 (en) * | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element, semiconductor device, and method for manufacturing the same |
KR101809105B1 (ko) | 2010-08-06 | 2017-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 집적 회로 |
US8659015B2 (en) | 2011-03-04 | 2014-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8809854B2 (en) | 2011-04-22 | 2014-08-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102113160B1 (ko) | 2012-06-15 | 2020-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2015128774A1 (en) * | 2014-02-28 | 2015-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
TWI663726B (zh) * | 2014-05-30 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 半導體裝置、模組及電子裝置 |
CN105528967B (zh) * | 2014-10-24 | 2018-02-23 | 环视先进数字显示无锡有限公司 | 一种复合led玻璃基板显示模组的制备方法 |
CN107004722A (zh) * | 2014-12-10 | 2017-08-01 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
US9660100B2 (en) * | 2015-02-06 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP2016154225A (ja) | 2015-02-12 | 2016-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP6683503B2 (ja) * | 2015-03-03 | 2020-04-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6736321B2 (ja) | 2015-03-27 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
US10056497B2 (en) * | 2015-04-15 | 2018-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP6584196B2 (ja) * | 2015-07-31 | 2019-10-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US20170062192A1 (en) | 2015-08-28 | 2017-03-02 | Semiconductor Energy Laboratory Co., Ltd. | Film forming apparatus |
JP6864456B2 (ja) | 2015-10-15 | 2021-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US10096631B2 (en) * | 2015-11-30 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and semiconductor device including the signal processing circuit |
KR102613318B1 (ko) * | 2015-12-28 | 2023-12-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US10147681B2 (en) * | 2016-12-09 | 2018-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013219345A (ja) * | 2012-03-16 | 2013-10-24 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US20170012139A1 (en) * | 2015-07-08 | 2017-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2017050530A (ja) * | 2015-07-08 | 2017-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020208457A1 (ja) * | 2019-04-10 | 2020-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
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