JP7098906B2 - ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 - Google Patents

ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 Download PDF

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Publication number
JP7098906B2
JP7098906B2 JP2017197996A JP2017197996A JP7098906B2 JP 7098906 B2 JP7098906 B2 JP 7098906B2 JP 2017197996 A JP2017197996 A JP 2017197996A JP 2017197996 A JP2017197996 A JP 2017197996A JP 7098906 B2 JP7098906 B2 JP 7098906B2
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Japan
Prior art keywords
layer
conductive type
silicon carbide
electric field
field block
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JP2017197996A
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English (en)
Japanese (ja)
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JP2019071394A5 (https=
JP2019071394A (ja
Inventor
周平 箕谷
佳史 安田
行彦 渡辺
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Denso Corp
Toyota Central R&D Labs Inc
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Denso Corp
Toyota Central R&D Labs Inc
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Priority to JP2017197996A priority Critical patent/JP7098906B2/ja
Priority to PCT/JP2018/034871 priority patent/WO2019073776A1/ja
Publication of JP2019071394A publication Critical patent/JP2019071394A/ja
Publication of JP2019071394A5 publication Critical patent/JP2019071394A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

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  • Electrodes Of Semiconductors (AREA)
JP2017197996A 2017-10-11 2017-10-11 ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法 Active JP7098906B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017197996A JP7098906B2 (ja) 2017-10-11 2017-10-11 ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
PCT/JP2018/034871 WO2019073776A1 (ja) 2017-10-11 2018-09-20 ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017197996A JP7098906B2 (ja) 2017-10-11 2017-10-11 ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法

Publications (3)

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JP2019071394A JP2019071394A (ja) 2019-05-09
JP2019071394A5 JP2019071394A5 (https=) 2020-12-17
JP7098906B2 true JP7098906B2 (ja) 2022-07-12

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JP (1) JP7098906B2 (https=)
WO (1) WO2019073776A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11031472B2 (en) 2018-12-28 2021-06-08 General Electric Company Systems and methods for integrated diode field-effect transistor semiconductor devices
JP7585646B2 (ja) 2019-08-13 2024-11-19 富士電機株式会社 半導体装置および半導体装置の製造方法
KR102335550B1 (ko) * 2020-05-06 2021-12-08 파워큐브세미 (주) 멀티에피를 활용하여 러기드니스가 강화된 실리콘카바이드 정션 배리어 쇼트키 다이오드
US20230290887A1 (en) * 2020-09-24 2023-09-14 Rohm Co., Ltd. Semiconductor device
CN112993017B (zh) * 2021-02-23 2022-08-09 厦门市三安集成电路有限公司 碳化硅器件外延结构及其制备方法
JP7647239B2 (ja) 2021-03-30 2025-03-18 富士電機株式会社 半導体装置
JP2022159760A (ja) * 2021-04-05 2022-10-18 ローム株式会社 半導体装置
EP4340032A1 (en) * 2022-09-15 2024-03-20 Nexperia B.V. Semiconductor power device with improved ruggedness
JP2025012573A (ja) * 2023-07-13 2025-01-24 株式会社東芝 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076370A (ja) 2000-09-05 2002-03-15 Fuji Electric Co Ltd 超接合ショットキーダイオード
JP2007081448A (ja) 2006-12-25 2007-03-29 Fuji Electric Device Technology Co Ltd 超接合半導体素子
US20110037139A1 (en) 2008-03-21 2011-02-17 Microsemi Corporation Schottky barrier diode (sbd) and its off-shoot merged pn/schottky diode or junction barrier schottky (jbs) diode
JP2014060376A (ja) 2012-09-14 2014-04-03 Hyundai Motor Company Co Ltd ショットキーバリアダイオードおよびその製造方法
JP2015216200A (ja) 2014-05-09 2015-12-03 株式会社豊田中央研究所 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11330498A (ja) * 1998-05-07 1999-11-30 Fuji Electric Co Ltd ショットキーバリアダイオードおよびその製造方法
JP2004022796A (ja) * 2002-06-17 2004-01-22 Matsushita Electric Ind Co Ltd 炭化珪素半導体素子およびその形成方法
JPWO2013183677A1 (ja) * 2012-06-06 2016-02-01 ローム株式会社 半導体装置およびその製造方法
JP5811977B2 (ja) * 2012-09-18 2015-11-11 株式会社デンソー 炭化珪素半導体装置
US9735237B2 (en) * 2015-06-26 2017-08-15 General Electric Company Active area designs for silicon carbide super-junction power devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076370A (ja) 2000-09-05 2002-03-15 Fuji Electric Co Ltd 超接合ショットキーダイオード
JP2007081448A (ja) 2006-12-25 2007-03-29 Fuji Electric Device Technology Co Ltd 超接合半導体素子
US20110037139A1 (en) 2008-03-21 2011-02-17 Microsemi Corporation Schottky barrier diode (sbd) and its off-shoot merged pn/schottky diode or junction barrier schottky (jbs) diode
JP2014060376A (ja) 2012-09-14 2014-04-03 Hyundai Motor Company Co Ltd ショットキーバリアダイオードおよびその製造方法
JP2015216200A (ja) 2014-05-09 2015-12-03 株式会社豊田中央研究所 半導体装置

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JP2019071394A (ja) 2019-05-09

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