JP7080070B2 - フォトマスク、及び表示装置の製造方法 - Google Patents

フォトマスク、及び表示装置の製造方法 Download PDF

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Publication number
JP7080070B2
JP7080070B2 JP2018026667A JP2018026667A JP7080070B2 JP 7080070 B2 JP7080070 B2 JP 7080070B2 JP 2018026667 A JP2018026667 A JP 2018026667A JP 2018026667 A JP2018026667 A JP 2018026667A JP 7080070 B2 JP7080070 B2 JP 7080070B2
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Japan
Prior art keywords
light
phase shift
photomask
line
exposure
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JP2018026667A
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Japanese (ja)
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JP2018163335A5 (enExample
JP2018163335A (ja
Inventor
修久 今敷
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Hoya Corp
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Hoya Corp
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Publication of JP2018163335A5 publication Critical patent/JP2018163335A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/001—Phase modulating patterns, e.g. refractive index patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2018026667A 2017-03-24 2018-02-19 フォトマスク、及び表示装置の製造方法 Active JP7080070B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017059685 2017-03-24
JP2017059685 2017-03-24

Publications (3)

Publication Number Publication Date
JP2018163335A JP2018163335A (ja) 2018-10-18
JP2018163335A5 JP2018163335A5 (enExample) 2021-03-11
JP7080070B2 true JP7080070B2 (ja) 2022-06-03

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JP2018026667A Active JP7080070B2 (ja) 2017-03-24 2018-02-19 フォトマスク、及び表示装置の製造方法

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JP (1) JP7080070B2 (enExample)
KR (1) KR102638753B1 (enExample)
CN (1) CN108628089B (enExample)
TW (2) TWI758694B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7383490B2 (ja) 2020-01-07 2023-11-20 株式会社エスケーエレクトロニクス フォトマスク
KR102360105B1 (ko) * 2020-12-29 2022-02-14 주식회사 포커스비전 영상 블러를 이용한 3차원 영상 생성방법
JP7743282B2 (ja) * 2021-11-10 2025-09-24 株式会社エスケーエレクトロニクス フォトマスクブランクスの製造方法及びフォトマスクの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003322949A (ja) 2002-04-30 2003-11-14 Matsushita Electric Ind Co Ltd フォトマスク及びそれを用いたパターン形成方法
JP2005107082A (ja) 2003-09-30 2005-04-21 Sanyo Electric Co Ltd 位相シフトマスクおよびパターン形成方法
JP2017010059A (ja) 2016-10-05 2017-01-12 Hoya株式会社 フォトマスク、フォトマスクの製造方法及びパターンの転写方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001296647A (ja) * 2000-02-10 2001-10-26 Nec Corp フォトマスクおよびこれを用いた露光方法
KR100626937B1 (ko) * 2001-12-26 2006-09-20 마츠시타 덴끼 산교 가부시키가이샤 패턴형성방법
US8134685B2 (en) * 2007-03-23 2012-03-13 Nikon Corporation Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method
JP5054766B2 (ja) * 2007-04-27 2012-10-24 Ｈｏｙａ株式会社 フォトマスクブランク及びフォトマスク
JP6127977B2 (ja) * 2011-10-21 2017-05-17 大日本印刷株式会社 大型位相シフトマスクおよび大型位相シフトマスクの製造方法
JP5605917B2 (ja) * 2011-12-27 2014-10-15 Ｈｏｙａ株式会社 フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6093117B2 (ja) * 2012-06-01 2017-03-08 Hoya株式会社 フォトマスク、フォトマスクの製造方法及びパターンの転写方法
JP6063650B2 (ja) * 2012-06-18 2017-01-18 Hoya株式会社 フォトマスクの製造方法
JP6106579B2 (ja) * 2013-11-25 2017-04-05 Hoya株式会社 フォトマスクの製造方法、フォトマスク及びパターン転写方法
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6335735B2 (ja) * 2014-09-29 2018-05-30 Hoya株式会社 フォトマスク及び表示装置の製造方法
JP6391495B2 (ja) * 2015-02-23 2018-09-19 Hoya株式会社 フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法
WO2016152212A1 (ja) * 2015-03-24 2016-09-29 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP6266842B2 (ja) * 2015-08-31 2018-01-24 Hoya株式会社 マスクブランク、マスクブランクの製造方法、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003322949A (ja) 2002-04-30 2003-11-14 Matsushita Electric Ind Co Ltd フォトマスク及びそれを用いたパターン形成方法
JP2005107082A (ja) 2003-09-30 2005-04-21 Sanyo Electric Co Ltd 位相シフトマスクおよびパターン形成方法
JP2017010059A (ja) 2016-10-05 2017-01-12 Hoya株式会社 フォトマスク、フォトマスクの製造方法及びパターンの転写方法

Also Published As

Publication number Publication date
KR20180108459A (ko) 2018-10-04
TWI758694B (zh) 2022-03-21
KR102638753B1 (ko) 2024-02-21
TW202024776A (zh) 2020-07-01
TW201837553A (zh) 2018-10-16
TWI691783B (zh) 2020-04-21
JP2018163335A (ja) 2018-10-18
CN108628089B (zh) 2023-09-12
CN108628089A (zh) 2018-10-09

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