CN108628089B - 显示装置制造用光掩模以及显示装置的制造方法 - Google Patents
显示装置制造用光掩模以及显示装置的制造方法 Download PDFInfo
- Publication number
- CN108628089B CN108628089B CN201810208726.2A CN201810208726A CN108628089B CN 108628089 B CN108628089 B CN 108628089B CN 201810208726 A CN201810208726 A CN 201810208726A CN 108628089 B CN108628089 B CN 108628089B
- Authority
- CN
- China
- Prior art keywords
- light
- phase shift
- photomask
- pattern
- light shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 62
- 238000000034 method Methods 0.000 title claims description 19
- 230000010363 phase shift Effects 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000005540 biological transmission Effects 0.000 claims abstract description 19
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 238000002834 transmittance Methods 0.000 claims description 12
- 238000010023 transfer printing Methods 0.000 claims 2
- 239000010408 film Substances 0.000 description 48
- 238000010586 diagram Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000004088 simulation Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 150000002736 metal compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000013041 optical simulation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017059685 | 2017-03-24 | ||
| JP2017-059685 | 2017-03-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108628089A CN108628089A (zh) | 2018-10-09 |
| CN108628089B true CN108628089B (zh) | 2023-09-12 |
Family
ID=63706266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810208726.2A Active CN108628089B (zh) | 2017-03-24 | 2018-03-14 | 显示装置制造用光掩模以及显示装置的制造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7080070B2 (enExample) |
| KR (1) | KR102638753B1 (enExample) |
| CN (1) | CN108628089B (enExample) |
| TW (2) | TWI758694B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7383490B2 (ja) | 2020-01-07 | 2023-11-20 | 株式会社エスケーエレクトロニクス | フォトマスク |
| KR102360105B1 (ko) * | 2020-12-29 | 2022-02-14 | 주식회사 포커스비전 | 영상 블러를 이용한 3차원 영상 생성방법 |
| JP7743282B2 (ja) * | 2021-11-10 | 2025-09-24 | 株式会社エスケーエレクトロニクス | フォトマスクブランクスの製造方法及びフォトマスクの製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103383523A (zh) * | 2012-05-02 | 2013-11-06 | Hoya株式会社 | 光掩模、图案转印方法以及平板显示器的制造方法 |
| CN103454851A (zh) * | 2012-06-01 | 2013-12-18 | Hoya株式会社 | 光掩模、光掩模的制造方法以及图案的转印方法 |
| CN105319831A (zh) * | 2014-07-17 | 2016-02-10 | Hoya株式会社 | 光掩模、光掩模的制造方法、光掩模坯料以及显示装置的制造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001296647A (ja) * | 2000-02-10 | 2001-10-26 | Nec Corp | フォトマスクおよびこれを用いた露光方法 |
| KR100626937B1 (ko) * | 2001-12-26 | 2006-09-20 | 마츠시타 덴끼 산교 가부시키가이샤 | 패턴형성방법 |
| JP3759914B2 (ja) * | 2002-04-30 | 2006-03-29 | 松下電器産業株式会社 | フォトマスク及びそれを用いたパターン形成方法 |
| JP2005107082A (ja) * | 2003-09-30 | 2005-04-21 | Sanyo Electric Co Ltd | 位相シフトマスクおよびパターン形成方法 |
| US8134685B2 (en) * | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
| JP5054766B2 (ja) * | 2007-04-27 | 2012-10-24 | Ｈｏｙａ株式会社 | フォトマスクブランク及びフォトマスク |
| JP6127977B2 (ja) * | 2011-10-21 | 2017-05-17 | 大日本印刷株式会社 | 大型位相シフトマスクおよび大型位相シフトマスクの製造方法 |
| JP5605917B2 (ja) * | 2011-12-27 | 2014-10-15 | Ｈｏｙａ株式会社 | フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 |
| JP6063650B2 (ja) * | 2012-06-18 | 2017-01-18 | Hoya株式会社 | フォトマスクの製造方法 |
| JP6106579B2 (ja) * | 2013-11-25 | 2017-04-05 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及びパターン転写方法 |
| JP6335735B2 (ja) * | 2014-09-29 | 2018-05-30 | Hoya株式会社 | フォトマスク及び表示装置の製造方法 |
| JP6391495B2 (ja) * | 2015-02-23 | 2018-09-19 | Hoya株式会社 | フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法 |
| WO2016152212A1 (ja) * | 2015-03-24 | 2016-09-29 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
| JP6266842B2 (ja) * | 2015-08-31 | 2018-01-24 | Hoya株式会社 | マスクブランク、マスクブランクの製造方法、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
| JP6322250B2 (ja) * | 2016-10-05 | 2018-05-09 | Hoya株式会社 | フォトマスクブランク |
-
2018
- 2018-02-19 JP JP2018026667A patent/JP7080070B2/ja active Active
- 2018-02-23 TW TW109108345A patent/TWI758694B/zh active
- 2018-02-23 TW TW107106075A patent/TWI691783B/zh active
- 2018-03-14 CN CN201810208726.2A patent/CN108628089B/zh active Active
- 2018-03-16 KR KR1020180030899A patent/KR102638753B1/ko active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103383523A (zh) * | 2012-05-02 | 2013-11-06 | Hoya株式会社 | 光掩模、图案转印方法以及平板显示器的制造方法 |
| CN103454851A (zh) * | 2012-06-01 | 2013-12-18 | Hoya株式会社 | 光掩模、光掩模的制造方法以及图案的转印方法 |
| CN105319831A (zh) * | 2014-07-17 | 2016-02-10 | Hoya株式会社 | 光掩模、光掩模的制造方法、光掩模坯料以及显示装置的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20180108459A (ko) | 2018-10-04 |
| JP7080070B2 (ja) | 2022-06-03 |
| TWI758694B (zh) | 2022-03-21 |
| KR102638753B1 (ko) | 2024-02-21 |
| TW202024776A (zh) | 2020-07-01 |
| TW201837553A (zh) | 2018-10-16 |
| TWI691783B (zh) | 2020-04-21 |
| JP2018163335A (ja) | 2018-10-18 |
| CN108628089A (zh) | 2018-10-09 |
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