JP7071878B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP7071878B2 JP7071878B2 JP2018102437A JP2018102437A JP7071878B2 JP 7071878 B2 JP7071878 B2 JP 7071878B2 JP 2018102437 A JP2018102437 A JP 2018102437A JP 2018102437 A JP2018102437 A JP 2018102437A JP 7071878 B2 JP7071878 B2 JP 7071878B2
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- 239000004065 semiconductor Substances 0.000 title claims description 79
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Description
図面は模式的または概念的なものであり、各部分の厚さと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
本願明細書と各図において、既に説明したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1に表したように、半導体装置110は、第1領域11、第2領域12、第1絶縁部21、第1電極41、第2電極42、及び第3電極43を含む。
以下では、第1方向、第2方向、および第3方向が、それぞれ、Z軸方向、X軸方向、およびY軸方向に沿う場合について説明する。
第2特性は、第3電極43に負の電位を所定時間連続して印加した場合の、閾値電圧の変動量である。第2特性は、第1領域11内部又は第2領域12と第3絶縁部23との界面に電荷がトラップされることと関係する。
第3電極43に正の電位を印加した時、第2絶縁領域21b及び第3絶縁領域21cを設けることで、第3絶縁部23に印加される電界を弱めることができる。このため、第3絶縁部23にトラップされる電荷が低減され、第1の特性を向上できると考えられる。また、第3電極43に負の電位を印加した時、第2絶縁領域21b及び第3絶縁領域21cを設けることで、第1領域11内部又は第2領域12と第3絶縁部23との界面に印加される電界を弱めることができる。このため、第1領域11内部又は第2領域12と第3絶縁部23との界面にトラップされる電荷が低減され、第2の特性を向上できると考えられる。
図5に表した半導体装置140では、第1電極41は、第1電極部分41aを含む。第1絶縁部21は、第4絶縁領域21dを含む。
図6に表した半導体装置150では、第2領域12は、第6部分領域12fをさらに含む。
Claims (13)
- Alx1Ga1-x1N(0≦x1<1)を含み、第1部分領域と、第2部分領域と、前記第1部分領域と前記第2部分領域との間の第3部分領域と、を含む第1領域と、
Alx2Ga1-x2N(0<x2<1、x1<x2)を含む第2領域であって、前記第1部分領域から前記第2部分領域への第2方向と交差する第1方向において前記第1部分領域と重なる第4部分領域と、前記第1方向において前記第2部分領域と重なり前記第2方向において前記第4部分領域から離れた第5部分領域と、を含む前記第2領域と、
第1絶縁部であって、前記第1方向において前記第3部分領域と重なる第1絶縁領域と、前記第1方向において前記第1絶縁領域の一部から離れた第2絶縁領域と、前記第1方向において前記第1絶縁領域の別の一部から離れ前記第2方向において前記第2絶縁領域から離れた第3絶縁領域と、を含み、前記第1絶縁領域は、前記第2絶縁領域と前記第3部分領域との間及び前記第3絶縁領域と前記第3部分領域との間に設けられた、前記第1絶縁部と、
前記第4部分領域と電気的に接続された第1電極と、
前記第2方向において前記第1電極から離れ、前記第5部分領域と電気的に接続された第2電極と、
前記第1電極と前記第2電極との間に設けられた第3電極であって、前記第2絶縁領域と前記第3絶縁領域との間に設けられた第1導電部と、前記第1絶縁領域と前記第2絶縁領域との間、前記第1絶縁領域と前記第3絶縁領域との間、及び前記第1絶縁領域と前記第1導電部との間に設けられた第2導電部と、を含む、前記第3電極と、
を備えた半導体装置。 - 第2絶縁部と、
第3絶縁部と、
をさらに備え、
前記第4部分領域は、前記第1方向において、前記第1部分領域と前記第2絶縁部との間に設けられ、
前記第5部分領域は、前記第1方向において、前記第2部分領域と前記第3絶縁部との間に設けられ、
前記第2導電部は、前記第2方向において、前記第2絶縁部と前記第2絶縁領域との間に設けられた第1導電領域を含む、請求項1記載の半導体装置。 - 前記第2絶縁部は、第1面及び第2面を有し、
前記第1面及び前記第2面は、前記第1方向と交差し、前記第2方向に沿い、
前記第2面は、前記第1面と前記第4部分領域との間に設けられ、
前記第1面から前記第1導電部への方向は、前記第2方向に沿う請求項2記載の半導体装置。 - 前記第1導電領域は、前記第1方向において、前記第1面と重ならない請求項3記載の半導体装置。
- 前記第1導電領域の前記第1方向における位置は、前記第1面の前記第1方向における位置と、前記第1領域の前記第1方向における位置と、の間にある請求項3記載の半導体装置。
- 前記第2導電部は、第2導電領域をさらに含み、
前記第2導電領域は、前記第2方向において、前記第3絶縁部と前記第3絶縁領域との間に設けられ、
前記第3絶縁部は、第3面及び第4面を有し、
前記第3面及び前記第4面は、前記第1方向と交差し、前記第2方向に沿い、
前記第4面は、前記第3面と前記第5部分領域との間に設けられ、
前記第3面から前記第1導電部への方向は、前記第2方向に沿う請求項3~5のいずれか1つに記載の半導体装置。 - 前記第2導電領域は、前記第1方向において、前記第3面と重ならない請求項6記載の半導体装置。
- 前記第2導電領域の前記第1方向における位置は、前記第3面の前記第1方向における位置と、前記第1領域の前記第1方向における位置と、の間にある請求項6記載の半導体装置。
- 前記第1導電部と接続された第3導電部をさらに備え、
前記第1導電部、前記第2絶縁領域、及び前記第3絶縁領域は、前記第2導電部と前記第3導電部との間に設けられ、
前記第3導電部は、前記第1方向において、前記第1面と重ならない請求項3~8のいずれか1つに記載の半導体装置。 - 前記第1導電部と接続された第3導電部をさらに備え、
前記第1導電部、前記第2絶縁領域、及び前記第3絶縁領域は、前記第2導電部と前記第3導電部との間に設けられ、
前記第3導電部は、前記第1方向において、前記第3面と重ならない請求項6~8のいずれか1つに記載の半導体装置。 - 前記第1絶縁部は、シリコン及び酸素を含み、
前記第2絶縁部及び前記第3絶縁部は、シリコン及び窒素を含む請求項3~10のいずれか1つに記載の半導体装置。 - 前記第1導電部、前記第2絶縁領域、及び前記第3絶縁領域は、前記第2方向において、前記第1電極と前記第2電極との間に設けられた請求項1~11のいずれか1つに記載の半導体装置。
- 前記第1導電部は、チタン、金、及びアルミニウムからなる群より選択された少なくとも1つと、窒素と、を含み、
前記第2導電部は、チタン及びモリブデンからなる群より選択された少なくとも1つを含む請求項1~12のいずれか1つに記載の半導体装置。
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