JP7068971B2 - プラズマ処理装置、温度制御方法および温度制御プログラム - Google Patents

プラズマ処理装置、温度制御方法および温度制御プログラム Download PDF

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JP7068971B2
JP7068971B2 JP2018160931A JP2018160931A JP7068971B2 JP 7068971 B2 JP7068971 B2 JP 7068971B2 JP 2018160931 A JP2018160931 A JP 2018160931A JP 2018160931 A JP2018160931 A JP 2018160931A JP 7068971 B2 JP7068971 B2 JP 7068971B2
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heater
temperature
plasma
wafer
thermal resistance
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JP2019091880A (ja
Inventor
信介 岡
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to TW111136669A priority Critical patent/TWI829367B/zh
Priority to TW107139592A priority patent/TWI782133B/zh
Priority to KR1020180140791A priority patent/KR102545993B1/ko
Priority to US16/191,545 priority patent/US11557468B2/en
Priority to CN201811366280.2A priority patent/CN109801828B/zh
Publication of JP2019091880A publication Critical patent/JP2019091880A/ja
Priority to JP2022075699A priority patent/JP7313509B2/ja
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Publication of JP7068971B2 publication Critical patent/JP7068971B2/ja
Priority to US18/073,171 priority patent/US20230087979A1/en
Priority to KR1020230076864A priority patent/KR20230095891A/ko
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  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Temperature (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018160931A 2017-11-16 2018-08-30 プラズマ処理装置、温度制御方法および温度制御プログラム Active JP7068971B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
TW111136669A TWI829367B (zh) 2017-11-16 2018-11-08 電漿處理裝置、溫度控制方法及溫度控制程式
TW107139592A TWI782133B (zh) 2017-11-16 2018-11-08 電漿處理裝置、溫度控制方法及溫度控制程式
US16/191,545 US11557468B2 (en) 2017-11-16 2018-11-15 Plasma processing apparatus, temperature control method, and temperature control program
KR1020180140791A KR102545993B1 (ko) 2017-11-16 2018-11-15 플라즈마 처리 장치, 온도 제어 방법 및 온도 제어 프로그램
CN201811366280.2A CN109801828B (zh) 2017-11-16 2018-11-16 等离子体处理装置、温度控制方法以及存储介质
JP2022075699A JP7313509B2 (ja) 2017-11-16 2022-05-02 プラズマ処理装置、温度制御方法および温度制御プログラム
US18/073,171 US20230087979A1 (en) 2017-11-16 2022-12-01 Plasma processing apparatus, temperature control method, and temperature control program
KR1020230076864A KR20230095891A (ko) 2017-11-16 2023-06-15 플라즈마 처리 장치, 온도 제어 방법 및 온도 제어 프로그램

Applications Claiming Priority (2)

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JP2017221223 2017-11-16
JP2017221223 2017-11-16

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JP2022075699A Division JP7313509B2 (ja) 2017-11-16 2022-05-02 プラズマ処理装置、温度制御方法および温度制御プログラム

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JP2019091880A JP2019091880A (ja) 2019-06-13
JP7068971B2 true JP7068971B2 (ja) 2022-05-17

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TW (1) TWI782133B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020004091A1 (ja) * 2018-06-29 2020-01-02 東京エレクトロン株式会社 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
JP7244348B2 (ja) * 2019-05-13 2023-03-22 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
JP7266481B2 (ja) * 2019-07-19 2023-04-28 東京エレクトロン株式会社 温度制御装置、温度制御方法、および検査装置
WO2021020723A1 (ko) * 2019-07-26 2021-02-04 주성엔지니어링(주) 기판처리장치 및 그의 인터락 방법
KR20220154200A (ko) * 2020-03-25 2022-11-21 도쿄엘렉트론가부시키가이샤 기판의 처리 방법 및 기판 처리 장치
CN113826189B (zh) * 2020-04-21 2024-03-22 株式会社日立高新技术 等离子处理装置以及等离子处理方法
KR102287443B1 (ko) * 2020-12-22 2021-08-09 주식회사 오토콘시스템 정전척 히터의 온도 제어 시스템
WO2024034355A1 (ja) * 2022-08-09 2024-02-15 東京エレクトロン株式会社 パラメータ推定システム、パラメータ推定方法、コンピュータプログラム及び基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7126091B1 (en) * 2005-03-23 2006-10-24 Eclipse Energy Systems, Inc. Workpiece holder for vacuum processing
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
JP6570894B2 (ja) * 2015-06-24 2019-09-04 東京エレクトロン株式会社 温度制御方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法

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JP2019091880A (ja) 2019-06-13
TWI782133B (zh) 2022-11-01
TW201933472A (zh) 2019-08-16

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