JP7065722B2 - 半導体装置、電力変換装置及び半導体装置の製造方法 - Google Patents

半導体装置、電力変換装置及び半導体装置の製造方法 Download PDF

Info

Publication number
JP7065722B2
JP7065722B2 JP2018143468A JP2018143468A JP7065722B2 JP 7065722 B2 JP7065722 B2 JP 7065722B2 JP 2018143468 A JP2018143468 A JP 2018143468A JP 2018143468 A JP2018143468 A JP 2018143468A JP 7065722 B2 JP7065722 B2 JP 7065722B2
Authority
JP
Japan
Prior art keywords
discharge
semiconductor device
region
discharge paths
paths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018143468A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020021800A5 (https=
JP2020021800A (ja
Inventor
明稔 白尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2018143468A priority Critical patent/JP7065722B2/ja
Priority to US16/447,569 priority patent/US10861758B2/en
Priority to DE102019210588.2A priority patent/DE102019210588A1/de
Priority to CN201910683205.7A priority patent/CN110854078B/zh
Publication of JP2020021800A publication Critical patent/JP2020021800A/ja
Publication of JP2020021800A5 publication Critical patent/JP2020021800A5/ja
Application granted granted Critical
Publication of JP7065722B2 publication Critical patent/JP7065722B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/01—Manufacture or treatment
    • H10W76/05—Providing fillings in containers, e.g. gas filling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42—Fillings
    • H10W76/47—Solid or gel fillings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dc-Dc Converters (AREA)
  • Inverter Devices (AREA)
JP2018143468A 2018-07-31 2018-07-31 半導体装置、電力変換装置及び半導体装置の製造方法 Active JP7065722B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018143468A JP7065722B2 (ja) 2018-07-31 2018-07-31 半導体装置、電力変換装置及び半導体装置の製造方法
US16/447,569 US10861758B2 (en) 2018-07-31 2019-06-20 Semiconductor device, power conversion apparatus, and method of manufacturing semiconductor device
DE102019210588.2A DE102019210588A1 (de) 2018-07-31 2019-07-18 Halbleitervorrichtung, Leistungsumwandlungsgerät und Verfahren zum Herstellen einer Halbleitervorrichtung
CN201910683205.7A CN110854078B (zh) 2018-07-31 2019-07-26 半导体装置、电力变换装置以及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018143468A JP7065722B2 (ja) 2018-07-31 2018-07-31 半導体装置、電力変換装置及び半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2020021800A JP2020021800A (ja) 2020-02-06
JP2020021800A5 JP2020021800A5 (https=) 2020-09-10
JP7065722B2 true JP7065722B2 (ja) 2022-05-12

Family

ID=69168288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018143468A Active JP7065722B2 (ja) 2018-07-31 2018-07-31 半導体装置、電力変換装置及び半導体装置の製造方法

Country Status (4)

Country Link
US (1) US10861758B2 (https=)
JP (1) JP7065722B2 (https=)
CN (1) CN110854078B (https=)
DE (1) DE102019210588A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147030A (ja) 2007-12-13 2009-07-02 Panasonic Corp 半導体装置
JP2010092982A (ja) 2008-10-06 2010-04-22 Sharp Corp 半導体装置の製造方法及び半導体装置の製造装置
JP2014082233A (ja) 2012-10-12 2014-05-08 Sumitomo Electric Ind Ltd 半導体装置及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09252062A (ja) 1996-03-18 1997-09-22 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH11121487A (ja) * 1997-10-14 1999-04-30 Oki Electric Ind Co Ltd 半導体素子の樹脂封止装置
JPH11297727A (ja) * 1998-04-10 1999-10-29 Dexter Kk 半導体チップの樹脂封着用ノズルと光センサーチップの製造方法
JP5056717B2 (ja) 2008-10-16 2012-10-24 株式会社デンソー モールドパッケージの製造方法
JP6001473B2 (ja) * 2013-02-12 2016-10-05 トヨタ自動車株式会社 半導体装置の製造方法
JP2016025154A (ja) * 2014-07-17 2016-02-08 三菱電機株式会社 高耐電圧樹脂封止型半導体装置及び金型

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147030A (ja) 2007-12-13 2009-07-02 Panasonic Corp 半導体装置
JP2010092982A (ja) 2008-10-06 2010-04-22 Sharp Corp 半導体装置の製造方法及び半導体装置の製造装置
JP2014082233A (ja) 2012-10-12 2014-05-08 Sumitomo Electric Ind Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
DE102019210588A1 (de) 2020-02-06
US10861758B2 (en) 2020-12-08
CN110854078B (zh) 2023-06-02
JP2020021800A (ja) 2020-02-06
US20200043818A1 (en) 2020-02-06
CN110854078A (zh) 2020-02-28

Similar Documents

Publication Publication Date Title
US9673118B2 (en) Power module and method of manufacturing power module
JP6833986B2 (ja) パワーモジュール、電力変換装置、およびパワーモジュールの製造方法
JP6806170B2 (ja) 半導体装置及び電力変換装置
US20200020622A1 (en) Semiconductor device and method for manufacturing the same, and power conversion device
CN112313781B (zh) 功率模块及其制造方法以及电力变换装置
JP7147859B2 (ja) 半導体装置、半導体モジュールおよび車両
JP6952889B2 (ja) パワー半導体モジュール及びその製造方法並びに電力変換装置
JP6685470B2 (ja) 半導体装置およびその製造方法、ならびに電力変換装置
US11037844B2 (en) Power semiconductor device and method of manufacturing the same, and power conversion device
CN104078428A (zh) 功率半导体模块和用于制造功率半导体模块的方法
US11887903B2 (en) Power semiconductor device, method for manufacturing power semiconductor device, and power conversion apparatus
JP7035920B2 (ja) 半導体装置および電力変換装置
CN111052325B (zh) 半导体模块以及电力转换装置
WO2020105556A1 (ja) 半導体装置、電力変換装置及び半導体装置の製造方法
CN111276448B (zh) 半导体装置及电力转换装置
JP7065722B2 (ja) 半導体装置、電力変換装置及び半導体装置の製造方法
JP2021125546A (ja) 半導体モジュール及び半導体モジュールの製造方法
JP2013074035A (ja) 半導体装置の製造方法
JP2021019139A (ja) 電力用半導体装置及び電力変換装置
US20220336402A1 (en) Semiconductor device, power conversion device, and method for manufacturing semiconductor device
JP6777157B2 (ja) 半導体装置及びその製造方法
JP7781340B2 (ja) パワー半導体装置、パワーモジュール及び電力変換装置
JP6885522B1 (ja) 半導体装置、電力変換装置および半導体装置の製造方法
WO2021140962A1 (ja) 半導体装置の製造方法、樹脂封入部材、半導体装置及び電力変換装置
Meng et al. Current Sharing Design of Multi-Chip SiC Power Module Based on 3D-Laminated Cu-Clip Architecture

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200803

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200803

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210825

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210928

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211108

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220329

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220426

R150 Certificate of patent or registration of utility model

Ref document number: 7065722

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250