DE102019210588A1 - Halbleitervorrichtung, Leistungsumwandlungsgerät und Verfahren zum Herstellen einer Halbleitervorrichtung - Google Patents
Halbleitervorrichtung, Leistungsumwandlungsgerät und Verfahren zum Herstellen einer Halbleitervorrichtung Download PDFInfo
- Publication number
- DE102019210588A1 DE102019210588A1 DE102019210588.2A DE102019210588A DE102019210588A1 DE 102019210588 A1 DE102019210588 A1 DE 102019210588A1 DE 102019210588 A DE102019210588 A DE 102019210588A DE 102019210588 A1 DE102019210588 A1 DE 102019210588A1
- Authority
- DE
- Germany
- Prior art keywords
- feed
- rg1b
- paths
- area
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
- H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/53871—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/01—Manufacture or treatment
- H10W74/016—Manufacture or treatment using moulds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/01—Manufacture or treatment
- H10W76/05—Providing fillings in containers, e.g. gas filling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/10—Containers or parts thereof
- H10W76/12—Containers or parts thereof characterised by their shape
- H10W76/15—Containers comprising an insulating or insulated base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
- H10W76/40—Fillings or auxiliary members in containers, e.g. centering rings
- H10W76/42—Fillings
- H10W76/47—Solid or gel fillings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Dc-Dc Converters (AREA)
- Inverter Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018143468A JP7065722B2 (ja) | 2018-07-31 | 2018-07-31 | 半導体装置、電力変換装置及び半導体装置の製造方法 |
| JPJP2018-143468 | 2018-07-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102019210588A1 true DE102019210588A1 (de) | 2020-02-06 |
Family
ID=69168288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102019210588.2A Pending DE102019210588A1 (de) | 2018-07-31 | 2019-07-18 | Halbleitervorrichtung, Leistungsumwandlungsgerät und Verfahren zum Herstellen einer Halbleitervorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US10861758B2 (https=) |
| JP (1) | JP7065722B2 (https=) |
| CN (1) | CN110854078B (https=) |
| DE (1) | DE102019210588A1 (https=) |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09252062A (ja) | 1996-03-18 | 1997-09-22 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
| JPH11121487A (ja) * | 1997-10-14 | 1999-04-30 | Oki Electric Ind Co Ltd | 半導体素子の樹脂封止装置 |
| JPH11297727A (ja) * | 1998-04-10 | 1999-10-29 | Dexter Kk | 半導体チップの樹脂封着用ノズルと光センサーチップの製造方法 |
| JP2009147030A (ja) | 2007-12-13 | 2009-07-02 | Panasonic Corp | 半導体装置 |
| JP5148445B2 (ja) | 2008-10-06 | 2013-02-20 | シャープ株式会社 | 半導体装置の製造方法及び半導体装置の製造装置 |
| JP5056717B2 (ja) | 2008-10-16 | 2012-10-24 | 株式会社デンソー | モールドパッケージの製造方法 |
| JP2014082233A (ja) | 2012-10-12 | 2014-05-08 | Sumitomo Electric Ind Ltd | 半導体装置及びその製造方法 |
| JP6001473B2 (ja) * | 2013-02-12 | 2016-10-05 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| JP2016025154A (ja) * | 2014-07-17 | 2016-02-08 | 三菱電機株式会社 | 高耐電圧樹脂封止型半導体装置及び金型 |
-
2018
- 2018-07-31 JP JP2018143468A patent/JP7065722B2/ja active Active
-
2019
- 2019-06-20 US US16/447,569 patent/US10861758B2/en active Active
- 2019-07-18 DE DE102019210588.2A patent/DE102019210588A1/de active Pending
- 2019-07-26 CN CN201910683205.7A patent/CN110854078B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10861758B2 (en) | 2020-12-08 |
| CN110854078B (zh) | 2023-06-02 |
| JP2020021800A (ja) | 2020-02-06 |
| US20200043818A1 (en) | 2020-02-06 |
| CN110854078A (zh) | 2020-02-28 |
| JP7065722B2 (ja) | 2022-05-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE112014006353B4 (de) | Leistungshalbleitermodul | |
| DE102015224431B4 (de) | Halbleiterbauelement | |
| DE112017007415T5 (de) | Halbleiterbauelement, Verfahren zur Herstellung desselben und Leistungswandlervorrichtung | |
| DE112017007029B4 (de) | Halbleitervorrichtung und Leistungsumwandlungsvorrichtung | |
| DE112017007673B4 (de) | Halbleitereinrichtung, Leistungsumwandlungsvorrichtung und Verfahren zum Herstellen einer Halbleitereinrichtung | |
| DE102019210172A1 (de) | Halbleitervorrichtung, Leistungswandler, Verfahren zum Herstellen einer Halbleitervorrichtung und Verfahren zum Herstellen eines Leistungswandlers | |
| DE212018000087U1 (de) | Halbleitervorrichtung | |
| DE102019212727B4 (de) | Halbleitervorrichtung und elektrische Leistungsumwandlungseinrichtung | |
| DE102020126810A1 (de) | Halbleitermodul und Leistungsumwandlungseinrichtung | |
| DE102014116383A1 (de) | Halbleitergehäuse umfassend ein transistor-chip-modul und ein treiber-chip-modul sowie verfahren zu dessen herstellung | |
| DE102006047989A1 (de) | Halbleitervorrichtung | |
| DE112015002272T5 (de) | Sic leistungsmodule mit hohem strom und niedrigen schaltverlusten | |
| DE102018217231A1 (de) | Halbleitervorrichtung und Verfahren zur Fertigung derselben | |
| DE112015006984T5 (de) | Halbleitervorrichtung und halbleitermodul, das mit derselben versehen ist | |
| DE102022133168A1 (de) | Doppelseitiges wärmeableitendes leistungshalbleitermodul und verfahren zu dessen herstellung | |
| DE102019208826B4 (de) | Leistungsmodul und Leistungsumwandlungsvorrichtung | |
| DE112018004816T5 (de) | Leistungsmodul, verfahren zur herstellung desselben und leistungswandler | |
| DE102018131999A1 (de) | Leistungsmodul und leistungwandler | |
| DE102018217675A1 (de) | Halbleitervorrichtung, Leistungsumwandlungsvorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung | |
| DE112017007599B4 (de) | Halbleiterelement-Bondingsubstrat, Halbleitervorrichtung und Leistungsumwandlungsvorrichtung | |
| DE102017217710A1 (de) | Halbleitervorrichtung und Leistungswandlungsvorrichtung | |
| DE102018200161B4 (de) | Halbleiteranordnung und verfahren zum herstellen der halbleiteranordnung | |
| DE102019218672A1 (de) | Halbleitervorrichtung und Leistungsumwandlungseinrichtung | |
| DE112016005807T5 (de) | Halbleitereinheit und Verfahren zur Herstellung derselben | |
| DE102019220222A1 (de) | Halbleitermodul, Verfahren zum Herstellen desselben und Leistungsumwandlungsvorrichtung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R012 | Request for examination validly filed | ||
| R016 | Response to examination communication | ||
| R084 | Declaration of willingness to licence | ||
| R016 | Response to examination communication | ||
| R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: H01L0023160000 Ipc: H10W0076400000 |