JP7058129B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

Info

Publication number
JP7058129B2
JP7058129B2 JP2018005761A JP2018005761A JP7058129B2 JP 7058129 B2 JP7058129 B2 JP 7058129B2 JP 2018005761 A JP2018005761 A JP 2018005761A JP 2018005761 A JP2018005761 A JP 2018005761A JP 7058129 B2 JP7058129 B2 JP 7058129B2
Authority
JP
Japan
Prior art keywords
plasma processing
plasma
data
prediction model
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018005761A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019125506A (ja
JP2019125506A5 (https=
Inventor
祥太 梅田
慶太 野木
昭 鹿子嶋
大輔 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Priority to JP2018005761A priority Critical patent/JP7058129B2/ja
Priority to KR1020180083797A priority patent/KR102100210B1/ko
Priority to TW107127210A priority patent/TWI739024B/zh
Priority to US16/123,208 priority patent/US11289313B2/en
Publication of JP2019125506A publication Critical patent/JP2019125506A/ja
Publication of JP2019125506A5 publication Critical patent/JP2019125506A5/ja
Application granted granted Critical
Publication of JP7058129B2 publication Critical patent/JP7058129B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32926Software, data control or modelling
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • G01J3/443Emission spectrometry
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00Program-control systems
    • G05B19/02Program-control systems electric
    • G05B19/418Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • G05B19/41875Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972Spectral analysis
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604Process monitoring, e.g. flow or thickness monitoring
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05BCONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00Program-control systems
    • G05B2219/20Pc systems
    • G05B2219/26Pc applications
    • G05B2219/2602Wafer processing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2018005761A 2018-01-17 2018-01-17 プラズマ処理装置 Active JP7058129B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018005761A JP7058129B2 (ja) 2018-01-17 2018-01-17 プラズマ処理装置
KR1020180083797A KR102100210B1 (ko) 2018-01-17 2018-07-19 플라스마 처리 장치
TW107127210A TWI739024B (zh) 2018-01-17 2018-08-06 電漿處理裝置
US16/123,208 US11289313B2 (en) 2018-01-17 2018-09-06 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018005761A JP7058129B2 (ja) 2018-01-17 2018-01-17 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2019125506A JP2019125506A (ja) 2019-07-25
JP2019125506A5 JP2019125506A5 (https=) 2020-09-03
JP7058129B2 true JP7058129B2 (ja) 2022-04-21

Family

ID=67214239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018005761A Active JP7058129B2 (ja) 2018-01-17 2018-01-17 プラズマ処理装置

Country Status (4)

Country Link
US (1) US11289313B2 (https=)
JP (1) JP7058129B2 (https=)
KR (1) KR102100210B1 (https=)
TW (1) TWI739024B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11966203B2 (en) 2019-08-21 2024-04-23 Kla Corporation System and method to adjust a kinetics model of surface reactions during plasma processing
JP7542417B2 (ja) 2019-12-27 2024-08-30 株式会社Screenホールディングス 基板処理装置、基板処理方法、基板処理システム、及び学習用データの生成方法
JP7429623B2 (ja) * 2020-08-31 2024-02-08 株式会社日立製作所 製造条件設定自動化装置及び方法
WO2026018701A1 (ja) * 2024-07-17 2026-01-22 東京エレクトロン株式会社 プラズマ処理装置及びレシピ登録方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281461A (ja) 2003-03-12 2004-10-07 Tokyo Electron Ltd 処理結果の予測方法及び予測装置
WO2007066404A1 (ja) 2005-12-08 2007-06-14 Spansion Llc 半導体製造装置、その制御システムおよびその制御方法
JP2009010370A (ja) 2008-06-11 2009-01-15 Hitachi Ltd 半導体処理装置
JP2009049382A (ja) 2007-07-26 2009-03-05 Panasonic Corp ドライエッチング方法およびドライエッチング装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004335841A (ja) * 2003-05-09 2004-11-25 Tokyo Electron Ltd プラズマ処理装置の予測装置及び予測方法
JP2005051269A (ja) * 2004-10-12 2005-02-24 Hitachi Ltd 半導体処理装置
JP5334787B2 (ja) * 2009-10-09 2013-11-06 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9184021B2 (en) * 2013-10-04 2015-11-10 Applied Materials, Inc. Predictive method of matching two plasma reactors
JP6220319B2 (ja) 2014-07-17 2017-10-25 株式会社日立ハイテクノロジーズ データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
JP6310866B2 (ja) * 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
JP6446334B2 (ja) * 2015-06-12 2018-12-26 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理装置の制御方法及び記憶媒体
JP6549917B2 (ja) * 2015-06-26 2019-07-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそのデータ解析装置
KR102901060B1 (ko) * 2016-03-03 2025-12-16 램 리써치 코포레이션 매칭 네트워크 모델의 파라미터들을 결정하도록 하나 이상의 픽스처들 및 효율을 사용하기 위한 시스템들 및 방법들

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281461A (ja) 2003-03-12 2004-10-07 Tokyo Electron Ltd 処理結果の予測方法及び予測装置
WO2007066404A1 (ja) 2005-12-08 2007-06-14 Spansion Llc 半導体製造装置、その制御システムおよびその制御方法
JP2009049382A (ja) 2007-07-26 2009-03-05 Panasonic Corp ドライエッチング方法およびドライエッチング装置
JP2009010370A (ja) 2008-06-11 2009-01-15 Hitachi Ltd 半導体処理装置

Also Published As

Publication number Publication date
KR102100210B1 (ko) 2020-04-14
US20190221407A1 (en) 2019-07-18
JP2019125506A (ja) 2019-07-25
KR20190087940A (ko) 2019-07-25
US11289313B2 (en) 2022-03-29
TW201933418A (zh) 2019-08-16
TWI739024B (zh) 2021-09-11

Similar Documents

Publication Publication Date Title
US12014909B2 (en) Plasma processing apparatus and plasma processing system
KR101571928B1 (ko) 분석 방법, 분석 장치 및 에칭 처리 시스템
JP7058129B2 (ja) プラズマ処理装置
KR101763780B1 (ko) 플라즈마 처리 장치 및 그의 데이터 해석 장치
US9972478B2 (en) Method and process of implementing machine learning in complex multivariate wafer processing equipment
EP3819930A1 (en) Manufacturing process determination device for substrate processing device, substrate processing system, manufacturing process determination device for substrate processing device, group of learning models, method for generating group of learning models, and program
JP5334787B2 (ja) プラズマ処理装置
JP6220319B2 (ja) データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
KR101746044B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법과 해석 장치 및 해석 방법
TW201003812A (en) Etching process state judgment method and system therefor
US11609188B2 (en) Processing condition determination system and processing condition searching method
JP6173851B2 (ja) 分析方法およびプラズマエッチング装置
US20190100840A1 (en) Plasma processing apparatus
JP5596832B2 (ja) プラズマ処理方法のRun−to−Run制御方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200720

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20200720

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210707

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210720

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20210917

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211112

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220315

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220411

R150 Certificate of patent or registration of utility model

Ref document number: 7058129

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150