KR102100210B1 - 플라스마 처리 장치 - Google Patents

플라스마 처리 장치 Download PDF

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Publication number
KR102100210B1
KR102100210B1 KR1020180083797A KR20180083797A KR102100210B1 KR 102100210 B1 KR102100210 B1 KR 102100210B1 KR 1020180083797 A KR1020180083797 A KR 1020180083797A KR 20180083797 A KR20180083797 A KR 20180083797A KR 102100210 B1 KR102100210 B1 KR 102100210B1
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South Korea
Prior art keywords
plasma processing
plasma
prediction model
data
unit
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KR1020180083797A
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Korean (ko)
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KR20190087940A (ko
Inventor
쇼타 우메다
게이타 노기
아키라 가고시마
다이스케 시라이시
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주식회사 히타치하이테크
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/443—Emission spectrometry
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Program-control systems
    • G05B19/02—Program-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/20—Pc systems
    • G05B2219/26—Pc applications
    • G05B2219/2602—Wafer processing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Automation & Control Theory (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020180083797A 2018-01-17 2018-07-19 플라스마 처리 장치 Active KR102100210B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-005761 2018-01-17
JP2018005761A JP7058129B2 (ja) 2018-01-17 2018-01-17 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20190087940A KR20190087940A (ko) 2019-07-25
KR102100210B1 true KR102100210B1 (ko) 2020-04-14

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KR1020180083797A Active KR102100210B1 (ko) 2018-01-17 2018-07-19 플라스마 처리 장치

Country Status (4)

Country Link
US (1) US11289313B2 (https=)
JP (1) JP7058129B2 (https=)
KR (1) KR102100210B1 (https=)
TW (1) TWI739024B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11966203B2 (en) 2019-08-21 2024-04-23 Kla Corporation System and method to adjust a kinetics model of surface reactions during plasma processing
JP7542417B2 (ja) 2019-12-27 2024-08-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、基板処理システム、及び学習用データの生成方法
JP7429623B2 (ja) * 2020-08-31 2024-02-08 株式会社日立製作所 製造条件設定自動化装置及び方法
WO2026018701A1 (ja) * 2024-07-17 2026-01-22 東京エレクトロン株式会社 プラズマ処理装置及びレシピ登録方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004335841A (ja) * 2003-05-09 2004-11-25 Tokyo Electron Ltd プラズマ処理装置の予測装置及び予測方法
JP2005051269A (ja) * 2004-10-12 2005-02-24 Hitachi Ltd 半導体処理装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4317701B2 (ja) 2003-03-12 2009-08-19 東京エレクトロン株式会社 処理結果の予測方法及び予測装置
WO2007066404A1 (ja) 2005-12-08 2007-06-14 Spansion Llc 半導体製造装置、その制御システムおよびその制御方法
JP2009049382A (ja) 2007-07-26 2009-03-05 Panasonic Corp ドライエッチング方法およびドライエッチング装置
JP4836994B2 (ja) 2008-06-11 2011-12-14 株式会社日立製作所 半導体処理装置
JP5334787B2 (ja) * 2009-10-09 2013-11-06 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9184021B2 (en) * 2013-10-04 2015-11-10 Applied Materials, Inc. Predictive method of matching two plasma reactors
JP6220319B2 (ja) 2014-07-17 2017-10-25 株式会社日立ハイテクノロジーズ データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
JP6310866B2 (ja) * 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
JP6446334B2 (ja) * 2015-06-12 2018-12-26 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理装置の制御方法及び記憶媒体
JP6549917B2 (ja) * 2015-06-26 2019-07-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそのデータ解析装置
KR102901060B1 (ko) * 2016-03-03 2025-12-16 램 리써치 코포레이션 매칭 네트워크 모델의 파라미터들을 결정하도록 하나 이상의 픽스처들 및 효율을 사용하기 위한 시스템들 및 방법들

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004335841A (ja) * 2003-05-09 2004-11-25 Tokyo Electron Ltd プラズマ処理装置の予測装置及び予測方法
JP2005051269A (ja) * 2004-10-12 2005-02-24 Hitachi Ltd 半導体処理装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
비특허문헌 1*

Also Published As

Publication number Publication date
US20190221407A1 (en) 2019-07-18
JP2019125506A (ja) 2019-07-25
KR20190087940A (ko) 2019-07-25
US11289313B2 (en) 2022-03-29
TW201933418A (zh) 2019-08-16
TWI739024B (zh) 2021-09-11
JP7058129B2 (ja) 2022-04-21

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