JP7057337B2 - 基板剥離装置、基板処理装置、及び基板剥離方法 - Google Patents

基板剥離装置、基板処理装置、及び基板剥離方法 Download PDF

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Publication number
JP7057337B2
JP7057337B2 JP2019196797A JP2019196797A JP7057337B2 JP 7057337 B2 JP7057337 B2 JP 7057337B2 JP 2019196797 A JP2019196797 A JP 2019196797A JP 2019196797 A JP2019196797 A JP 2019196797A JP 7057337 B2 JP7057337 B2 JP 7057337B2
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Japan
Prior art keywords
substrate
peeling
adhesive
shaft portion
holding
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JP2019196797A
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English (en)
Japanese (ja)
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JP2021072323A (ja
Inventor
由也 戸江
義行 下窄
滋之 小川
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Canon Tokki Corp
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Canon Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Canon Tokki Corp filed Critical Canon Tokki Corp
Priority to JP2019196797A priority Critical patent/JP7057337B2/ja
Priority to KR1020200136959A priority patent/KR102501606B1/ko
Priority to CN202011178179.1A priority patent/CN112750745B/zh
Publication of JP2021072323A publication Critical patent/JP2021072323A/ja
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Publication of JP7057337B2 publication Critical patent/JP7057337B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
JP2019196797A 2019-10-29 2019-10-29 基板剥離装置、基板処理装置、及び基板剥離方法 Active JP7057337B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019196797A JP7057337B2 (ja) 2019-10-29 2019-10-29 基板剥離装置、基板処理装置、及び基板剥離方法
KR1020200136959A KR102501606B1 (ko) 2019-10-29 2020-10-21 기판 박리 장치, 기판 처리 장치, 및 기판 박리 방법
CN202011178179.1A CN112750745B (zh) 2019-10-29 2020-10-29 基板剥离装置、基板处理装置以及基板剥离方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019196797A JP7057337B2 (ja) 2019-10-29 2019-10-29 基板剥離装置、基板処理装置、及び基板剥離方法

Publications (2)

Publication Number Publication Date
JP2021072323A JP2021072323A (ja) 2021-05-06
JP7057337B2 true JP7057337B2 (ja) 2022-04-19

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JP2019196797A Active JP7057337B2 (ja) 2019-10-29 2019-10-29 基板剥離装置、基板処理装置、及び基板剥離方法

Country Status (3)

Country Link
JP (1) JP7057337B2 (ko)
KR (1) KR102501606B1 (ko)
CN (1) CN112750745B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7465859B2 (ja) 2021-11-25 2024-04-11 キヤノントッキ株式会社 基板キャリア、基板剥離装置、成膜装置、及び基板剥離方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003075343A1 (en) 2002-03-05 2003-09-12 Sharp Kabushiki Kaisha Method for holding substrate in vacuum, method for manufacturing liquid crystal display device, and device for holding substrate
JP2006108133A (ja) 2004-09-30 2006-04-20 Tokyo Electron Ltd 基板搬送装置
WO2010113485A1 (ja) 2009-03-31 2010-10-07 株式会社アルバック 保持装置、搬送装置及び回転伝達装置
WO2012147725A1 (ja) 2011-04-28 2012-11-01 東レエンジニアリング株式会社 半導体チップのピックアップ装置
JP2015216364A (ja) 2014-04-23 2015-12-03 株式会社アルバック 保持装置、真空処理装置
JP2016039185A (ja) 2014-08-05 2016-03-22 株式会社アルバック 基板ホルダおよび基板着脱方法
JP2016119337A (ja) 2014-12-18 2016-06-30 東京エレクトロン株式会社 基板保持ステージ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08294889A (ja) * 1995-04-28 1996-11-12 Murata Mfg Co Ltd 物品移載装置
JP5054933B2 (ja) * 2006-05-23 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2013055093A (ja) * 2011-09-01 2013-03-21 Creative Technology:Kk 粘着チャック装置及びワークの粘着保持方法
US9676175B2 (en) * 2014-06-20 2017-06-13 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus
JP6354945B2 (ja) * 2014-07-11 2018-07-11 旭硝子株式会社 積層体の剥離装置及び剥離方法並びに電子デバイスの製造方法
US10625443B2 (en) * 2015-12-29 2020-04-21 Hon Hai Precision Industry Co., Ltd. Method and device for releasing resin film, method for manufacturing electronic device, and method for manufacturing organic EL display device
KR102527366B1 (ko) * 2016-10-19 2023-05-02 삼성디스플레이 주식회사 표시 모듈의 박리 방법 및 표시 모듈의 제조 방법
KR102010158B1 (ko) * 2017-12-26 2019-08-12 캐논 톡키 가부시키가이샤 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003075343A1 (en) 2002-03-05 2003-09-12 Sharp Kabushiki Kaisha Method for holding substrate in vacuum, method for manufacturing liquid crystal display device, and device for holding substrate
JP2006108133A (ja) 2004-09-30 2006-04-20 Tokyo Electron Ltd 基板搬送装置
WO2010113485A1 (ja) 2009-03-31 2010-10-07 株式会社アルバック 保持装置、搬送装置及び回転伝達装置
WO2012147725A1 (ja) 2011-04-28 2012-11-01 東レエンジニアリング株式会社 半導体チップのピックアップ装置
JP2015216364A (ja) 2014-04-23 2015-12-03 株式会社アルバック 保持装置、真空処理装置
JP2016039185A (ja) 2014-08-05 2016-03-22 株式会社アルバック 基板ホルダおよび基板着脱方法
JP2016119337A (ja) 2014-12-18 2016-06-30 東京エレクトロン株式会社 基板保持ステージ

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JP2021072323A (ja) 2021-05-06
KR102501606B1 (ko) 2023-02-17
CN112750745B (zh) 2023-07-25
KR20210052265A (ko) 2021-05-10
CN112750745A (zh) 2021-05-04

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