JP7056662B2 - 重合体、樹脂組成物、樹脂膜、パターン化樹脂膜の製造方法、および電子部品 - Google Patents

重合体、樹脂組成物、樹脂膜、パターン化樹脂膜の製造方法、および電子部品 Download PDF

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JP7056662B2
JP7056662B2 JP2019535030A JP2019535030A JP7056662B2 JP 7056662 B2 JP7056662 B2 JP 7056662B2 JP 2019535030 A JP2019535030 A JP 2019535030A JP 2019535030 A JP2019535030 A JP 2019535030A JP 7056662 B2 JP7056662 B2 JP 7056662B2
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carbon atoms
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carbon
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JPWO2019031114A1 (ja
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努 下川
誠 杉浦
貴史 土井
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JSR Corp
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00Compositions of unspecified macromolecular compounds
    • C08L101/02Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
    • C08L101/06Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups containing oxygen atoms
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • C08F212/24Phenols or alcohols

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2019535030A 2017-08-10 2018-07-03 重合体、樹脂組成物、樹脂膜、パターン化樹脂膜の製造方法、および電子部品 Active JP7056662B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2017155654 2017-08-10
JP2017155654 2017-08-10
JP2018049532 2018-03-16
JP2018049532 2018-03-16
PCT/JP2018/025282 WO2019031114A1 (fr) 2017-08-10 2018-07-03 Polymère, composition de résine, film de résine, procédé de production de film de résine à motifs, et composant électronique

Publications (2)

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JPWO2019031114A1 JPWO2019031114A1 (ja) 2020-07-02
JP7056662B2 true JP7056662B2 (ja) 2022-04-19

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JP2019535030A Active JP7056662B2 (ja) 2017-08-10 2018-07-03 重合体、樹脂組成物、樹脂膜、パターン化樹脂膜の製造方法、および電子部品

Country Status (3)

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JP (1) JP7056662B2 (fr)
TW (1) TW201910363A (fr)
WO (1) WO2019031114A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021095766A1 (fr) * 2019-11-12 2021-05-20
JP7431696B2 (ja) 2020-08-04 2024-02-15 信越化学工業株式会社 ポジ型感光性樹脂組成物、ポジ型感光性ドライフィルム、ポジ型感光性ドライフィルムの製造方法、パターン形成方法、硬化被膜形成方法、層間絶縁膜、表面保護膜、及び電子部品

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000275842A (ja) 1999-03-26 2000-10-06 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
JP2005266049A (ja) 2004-03-17 2005-09-29 Toray Ind Inc ポジ型感放射線性組成物
JP2007506999A (ja) 2003-09-25 2007-03-22 スマート ホログラムズ リミテッド ホログラフィックセンサを含む眼科装置
WO2012118686A2 (fr) 2011-02-28 2012-09-07 Coopervision International Holding Company, Lp Lentilles de contact en hydrogel de silicone
WO2012160975A1 (fr) 2011-05-20 2012-11-29 日産化学工業株式会社 Composition de résine photosensible
JP2014063038A (ja) 2012-09-21 2014-04-10 Shin Etsu Chem Co Ltd レジスト保護膜材料及びパターン形成方法
JP2014063045A (ja) 2012-09-21 2014-04-10 Shin Etsu Chem Co Ltd レジスト材料及びこれを用いたパターン形成方法
JP2014081502A (ja) 2012-10-17 2014-05-08 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びこれを用いたパターン形成方法
JP2014137454A (ja) 2013-01-16 2014-07-28 Jsr Corp ポジ型感放射線性樹脂組成物、硬化膜及びその形成方法、半導体素子、並びに表示素子
JP2014152192A (ja) 2013-02-05 2014-08-25 Jsr Corp 硬化膜形成用熱硬化性樹脂組成物、硬化膜形成用感放射線性樹脂組成物、硬化膜、その形成方法、半導体素子及び表示素子
JP2017082173A (ja) 2015-10-30 2017-05-18 Jsr株式会社 硬化膜形成用樹脂材料、硬化膜の形成方法、硬化膜、半導体素子及び表示素子
JP2017107024A (ja) 2015-12-08 2017-06-15 Jsr株式会社 感放射線性樹脂組成物、硬化膜の形成方法、硬化膜、半導体素子及び表示素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08119822A (ja) * 1994-10-20 1996-05-14 Sogo Shika Iryo Kenkyusho:Kk 歯科用接着性根管充填材料

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000275842A (ja) 1999-03-26 2000-10-06 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
JP2007506999A (ja) 2003-09-25 2007-03-22 スマート ホログラムズ リミテッド ホログラフィックセンサを含む眼科装置
JP2005266049A (ja) 2004-03-17 2005-09-29 Toray Ind Inc ポジ型感放射線性組成物
WO2012118686A2 (fr) 2011-02-28 2012-09-07 Coopervision International Holding Company, Lp Lentilles de contact en hydrogel de silicone
WO2012160975A1 (fr) 2011-05-20 2012-11-29 日産化学工業株式会社 Composition de résine photosensible
JP2014063038A (ja) 2012-09-21 2014-04-10 Shin Etsu Chem Co Ltd レジスト保護膜材料及びパターン形成方法
JP2014063045A (ja) 2012-09-21 2014-04-10 Shin Etsu Chem Co Ltd レジスト材料及びこれを用いたパターン形成方法
JP2014081502A (ja) 2012-10-17 2014-05-08 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びこれを用いたパターン形成方法
JP2014137454A (ja) 2013-01-16 2014-07-28 Jsr Corp ポジ型感放射線性樹脂組成物、硬化膜及びその形成方法、半導体素子、並びに表示素子
JP2014152192A (ja) 2013-02-05 2014-08-25 Jsr Corp 硬化膜形成用熱硬化性樹脂組成物、硬化膜形成用感放射線性樹脂組成物、硬化膜、その形成方法、半導体素子及び表示素子
JP2017082173A (ja) 2015-10-30 2017-05-18 Jsr株式会社 硬化膜形成用樹脂材料、硬化膜の形成方法、硬化膜、半導体素子及び表示素子
JP2017107024A (ja) 2015-12-08 2017-06-15 Jsr株式会社 感放射線性樹脂組成物、硬化膜の形成方法、硬化膜、半導体素子及び表示素子

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TW201910363A (zh) 2019-03-16
WO2019031114A1 (fr) 2019-02-14

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