JP7044430B1 - 受光装置 - Google Patents
受光装置 Download PDFInfo
- Publication number
- JP7044430B1 JP7044430B1 JP2021551569A JP2021551569A JP7044430B1 JP 7044430 B1 JP7044430 B1 JP 7044430B1 JP 2021551569 A JP2021551569 A JP 2021551569A JP 2021551569 A JP2021551569 A JP 2021551569A JP 7044430 B1 JP7044430 B1 JP 7044430B1
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- light
- semiconductor substrate
- semiconductor
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 122
- 239000000758 substrate Substances 0.000 claims abstract description 73
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000005304 optical glass Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/022358 WO2022259535A1 (fr) | 2021-06-11 | 2021-06-11 | Dispositif de réception de lumière |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP7044430B1 true JP7044430B1 (ja) | 2022-03-30 |
| JPWO2022259535A1 JPWO2022259535A1 (fr) | 2022-12-15 |
Family
ID=81215156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021551569A Active JP7044430B1 (ja) | 2021-06-11 | 2021-06-11 | 受光装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7044430B1 (fr) |
| WO (1) | WO2022259535A1 (fr) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227676A (ja) * | 2006-02-23 | 2007-09-06 | Matsushita Electric Works Ltd | 赤外線デバイス集積装置 |
| CN104157719A (zh) * | 2014-07-08 | 2014-11-19 | 浙江大立科技股份有限公司 | 晶圆级封装红外探测器及其制备方法 |
| JP2017032731A (ja) * | 2015-07-31 | 2017-02-09 | 住友電気工業株式会社 | 波長多重光受信モジュール |
| DE102015217290A1 (de) * | 2015-09-10 | 2017-03-16 | Robert Bosch Gmbh | Mikroelektronische Anordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Anordnung |
-
2021
- 2021-06-11 JP JP2021551569A patent/JP7044430B1/ja active Active
- 2021-06-11 WO PCT/JP2021/022358 patent/WO2022259535A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007227676A (ja) * | 2006-02-23 | 2007-09-06 | Matsushita Electric Works Ltd | 赤外線デバイス集積装置 |
| CN104157719A (zh) * | 2014-07-08 | 2014-11-19 | 浙江大立科技股份有限公司 | 晶圆级封装红外探测器及其制备方法 |
| JP2017032731A (ja) * | 2015-07-31 | 2017-02-09 | 住友電気工業株式会社 | 波長多重光受信モジュール |
| DE102015217290A1 (de) * | 2015-09-10 | 2017-03-16 | Robert Bosch Gmbh | Mikroelektronische Anordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Anordnung |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2022259535A1 (fr) | 2022-12-15 |
| WO2022259535A1 (fr) | 2022-12-15 |
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