WO2022259535A1 - Dispositif de réception de lumière - Google Patents

Dispositif de réception de lumière Download PDF

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Publication number
WO2022259535A1
WO2022259535A1 PCT/JP2021/022358 JP2021022358W WO2022259535A1 WO 2022259535 A1 WO2022259535 A1 WO 2022259535A1 JP 2021022358 W JP2021022358 W JP 2021022358W WO 2022259535 A1 WO2022259535 A1 WO 2022259535A1
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WO
WIPO (PCT)
Prior art keywords
light
light receiving
condenser lens
semiconductor
semiconductor substrate
Prior art date
Application number
PCT/JP2021/022358
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English (en)
Japanese (ja)
Inventor
尚友 磯村
悦司 大村
Original Assignee
株式会社京都セミコンダクター
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社京都セミコンダクター filed Critical 株式会社京都セミコンダクター
Priority to PCT/JP2021/022358 priority Critical patent/WO2022259535A1/fr
Priority to JP2021551569A priority patent/JP7044430B1/ja
Publication of WO2022259535A1 publication Critical patent/WO2022259535A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device

Definitions

  • the present invention relates to a light-receiving device installed in a measuring instrument such as a spectroscopic analyzer, and more particularly to a light-receiving device that receives infrared light.
  • measuring instruments such as spectroscopic analysis are equipped with a light receiving device for detecting the absorption spectrum of a sample in the infrared region, for example.
  • a photodetector is equipped with a semiconductor photodetector having a bandgap energy corresponding to the wavelength of light to be received, and is required to detect weak optical signals for highly accurate analysis.
  • the bandgap energy is small, noise is likely to occur due to factors such as heat, and when a weak optical signal is photoelectrically converted, it cannot be distinguished from noise. Therefore, it is necessary to suppress the noise level.
  • the dark current tends to increase as the bandgap energy decreases, and increases as the area of the light receiving portion increases at the same bandgap energy. Therefore, increasing the area of the light-receiving portion to increase the amount of light received and suppressing the dark current are in conflict with each other, and it is not easy to achieve both.
  • Patent Document 1 there is known a technique of increasing the amount of received light by condensing light onto a light receiving portion having a small area using a condenser lens integrally formed with a semiconductor light receiving element.
  • a light receiving unit is also known in which a condensing lens and a light receiving element are fixed to a shield member, and light is condensed on a light receiving portion of the light receiving element by means of the condensing lens.
  • the convex lens surface 50a and the light receiving portion 51 is too small, most of the incident light L condensed by the condensing lens 50 cannot reach the light receiving portion 51, and the increase in the amount of received light is not large.
  • Patent Document 2 since the condenser lens and the semiconductor light receiving element are separate members, the distance between them can be increased. However, it is not easy to assemble the light-receiving device because it is necessary to align the semiconductor light-receiving element, the case, and the light-collecting lens in order to focus the light on the light-receiving portion. In addition, in order to prevent cracking or chipping of the condenser lens, which has a thinner peripheral portion than the central portion, and to facilitate handling during assembly, it is necessary to form the condenser lens to some extent thick. Therefore, it becomes difficult to form a compact light receiving device, and there is a possibility that a sufficient amount of received light cannot be secured depending on the transmittance of the condenser lens.
  • An object of the present invention is to provide a light receiving device that can achieve both an increase in the amount of light received and a reduction in size.
  • a light-receiving device having a first condenser lens and a semiconductor light-receiving element, wherein incident light condensed by the first condenser lens is incident on the semiconductor light-receiving element.
  • the first condensing lens is formed on a first surface side of a first semiconductor substrate through which incident light is transmitted, and corresponds to the first condensing lens of the first semiconductor substrate.
  • a housing portion is formed by recessing the first semiconductor substrate from a second surface facing the surface toward the first surface side, and the semiconductor light receiving element is formed in the second semiconductor substrate and extends into the housing portion. Characterized by containment.
  • the light receiving device includes the first condensing lens formed on the first semiconductor substrate, and the accommodating portion formed by recessing the first semiconductor substrate so as to correspond to the first condensing lens. and a semiconductor light receiving element.
  • the semiconductor light receiving element is formed on the second semiconductor substrate and accommodated in the accommodation portion of the first semiconductor substrate, and the light condensed by the first condenser lens enters the semiconductor light receiving element. Since the first condenser lens is separate from the semiconductor light receiving element, by increasing the distance between the first condenser lens and the semiconductor light receiving element, the light receiving diameter that can be incident on the semiconductor light receiving element in the first condenser lens is increased. can be done.
  • the first condenser lens formed on the first semiconductor substrate has a higher refractive index than a general condenser lens made of optical glass or optical plastic, and has an improved light-condensing function. Therefore, it is possible to reduce the distance between the first condenser lens and the semiconductor light receiving element while maintaining the light receiving diameter of the first condenser lens, thereby downsizing the light receiving device. Further, since the first condenser lens is integrally formed on the first semiconductor substrate together with the accommodating portion, it is easy to align the first condenser lens and the semiconductor light receiving element accommodated in the accommodating portion. In addition, since the first condenser lens is thinly formed by forming the accommodating portion, the amount of incident light transmitted through the first condenser lens can be increased, contributing to an increase in the amount of received light. do.
  • a light-receiving device comprising a light-receiving portion formed on the main surface side of the second semiconductor substrate and a second condenser lens formed on the back surface side. and is accommodated in the accommodating portion with the back side facing the first condenser lens, and the incident light condensed by the first condenser lens is condensed by the second condenser lens It is characterized in that it is configured to be illuminated and incident on the light receiving section. According to the above configuration, the incident light condensed by the first condensing lens is condensed by the second condensing lens and enters the light receiving section. 1. By reducing the distance between the condenser lens and the semiconductor light receiving element, the size of the light receiving device can be reduced.
  • a light receiving device according to the first or second aspect of the invention, wherein the incident light is infrared light and the first semiconductor substrate is a silicon substrate.
  • the first semiconductor substrate on which the first condenser lens is formed is a silicon substrate having a high transmittance and a high refractive index with respect to infrared light, it is advantageous for miniaturization of the light receiving device. Since high-precision processing is possible, a high-performance light-receiving device with an increased light-receiving amount can be formed.
  • a light-receiving device according to any one of the first to third aspects of the invention, further comprising a light shielding structure for preventing stray light from entering the first condenser lens.
  • the light receiving device of the present invention it is possible to achieve both an increase in the amount of received light and a reduction in size.
  • FIG. 2 is a cross-sectional view taken along the line II-II of FIG. 1 for explaining incident light;
  • FIG. 3 is a cross-sectional view corresponding to FIG. 2 showing a modification of the light receiving device of FIG. 1;
  • FIG. 10 is an explanatory diagram of a process of forming a resist mask for the lens holder; It is explanatory drawing of the lens etching process of a lens holder. It is explanatory drawing of the accommodating part etching process of a lens holder. It is explanatory drawing of the completed lens holder.
  • FIG. 4 is an explanatory diagram of incident light by a condenser lens integrally formed on a light receiving element;
  • the light receiving device 1 has a semiconductor light receiving element 2 for photoelectric conversion, a substrate 4 having a pair of electrodes 3 a and 3 b, and a lens holder 5 fixed to the substrate 4 .
  • the material of the lens holder 5 is the first semiconductor substrate 10 through which the incident light can pass, and the lens holder 5 is formed with the first condensing lens 6 and the accommodating portion 7 . Collimated light is incident as incident light in the direction of the optical axis P of the first condenser lens 6 , and the light condensed by the first condenser lens 6 enters the semiconductor light receiving element 2 housed in the housing portion 7 .
  • the first condenser lens 6 has a convex surface on the first surface 10a side corresponding to the front side of a silicon (Si) substrate as the first semiconductor substrate 10, and corresponds to the back side facing the first surface 10a. It is a spherical plano-convex lens in which the surface on the second surface 10b side is formed flat.
  • the first semiconductor substrate 10 transmits infrared light with a wavelength of 1.2 ⁇ m or more, for example, and has a refractive index of 3.2 or more, which is larger than the refractive index (about 1.5 to 1.7) of general optical glass and optical plastic. has a refractive index of
  • the accommodating portion 7 for accommodating the semiconductor light receiving element 2 is formed by recessing the first semiconductor substrate 10 from the second surface 10b toward the first surface 10a so as to correspond to the first condenser lens 6. It is The first surface 10a and the second surface 10b are (110) surfaces of the first semiconductor substrate 10, respectively. The flat surface of the first condenser lens 6 facing the accommodating portion 7 is the (110) surface of the first semiconductor substrate 10 . Two side surfaces 10c and 10d facing the accommodating portion 7 are the (111) planes of the first semiconductor substrate 10 and are parallel to each other. These two side surfaces 10c and 10d are perpendicular to the (110) plane of the first semiconductor substrate 10, respectively.
  • the semiconductor light-receiving element 2 formed on the second semiconductor substrate 20 has, for example, a light-receiving portion 20a (photodiode) with a diameter F of 0.1 mm. are connected to the corresponding electrodes 3a and 3b via the . Incident light incident on the light receiving portion 20a of the semiconductor light receiving element 2 is converted into an electric signal (photocurrent) and output to the outside via a pair of electrodes 3a and 3b.
  • the lens holder 5 and the semiconductor light receiving element 2 are aligned so that the optical axis P of the first condenser lens 6 passes through the center of the light receiving section 20a. Further, the thickness of the lens holder 5 is set to, for example, 1.15 mm, the curvature radius CR1 of the first condenser lens 6 is 1.8 mm, the diameter A is 1.2 mm, and the thickness B at the optical axis P is 0.2 mm. is set to
  • a ray tracing simulation result when collimated light is incident on the first condenser lens 6 is indicated by a plurality of rays L1.
  • the distance D between the first condenser lens 6 and the light receiving section 20a is set so that all incident light with a beam diameter C of 1 mm can enter the light receiving section 20a.
  • the distance D between the flat surface of the first condenser lens 6 facing the accommodating portion 7 and the light receiving portion 20a of the semiconductor light receiving element 2 is set to 0.8 mm
  • the thickness E of the semiconductor light receiving element 2 is set to 0.15 mm.
  • the semiconductor light-receiving element 2 is arranged with the side on which the light-receiving part 20a is formed facing the first condenser lens 6, but since the incident light passes through the second semiconductor substrate 20, It is also possible to adjust the distance D so that the side on which the portion 20a is formed faces the substrate 4 side.
  • the semiconductor light-receiving element 2 is formed on, for example, an indium phosphide (InP) substrate as a second semiconductor substrate 20, and has a light-receiving portion 20a having a bandgap energy of about 0.6 eV, which includes, for example, an InGaAs layer as a light absorption layer.
  • the semiconductor light receiving element 2 may include a light receiving portion 20a made of, for example, InAs or InSb, which has a smaller bandgap energy than InGaAs, in order to receive incident light with a longer wavelength.
  • the distance D can be made larger than the thickness E of the semiconductor light receiving element 2 (thickness of the second semiconductor substrate 20). Therefore, even incident light with a beam diameter C about ten times larger than the diameter F of the light receiving portion 20a can be condensed by the first condenser lens 6 and made incident on the light receiving portion 20a. Since the light-receiving area of the first condenser lens 6 is about 100 times the area of the light-receiving part 20a, the dark current is suppressed by the light-receiving part 20a, which has a small area, while the light is received by the first condenser lens 6, which has a large light-receiving area. The amount of light received can be increased by concentrating the light on the light receiving portion 20a.
  • a light receiving device 1A having a semiconductor light receiving element 2A with a second condenser lens 20b can be formed.
  • the semiconductor light receiving element 2A includes a light receiving portion 20a formed on the principal surface 20c side of the second semiconductor substrate 20, and a second condenser lens 20b formed on the rear surface 20d facing the principal surface 20c. 1 is housed in the housing portion 7 in a posture directed toward the condenser lens 6 side. Then, the incident light condensed by the first condensing lens 6 as indicated by the light ray L2 is condensed by the second condensing lens 20b and enters the light receiving section 20a.
  • the semiconductor light receiving element 2A is connected to the corresponding electrodes 3a and 3b via, for example, conductive paste (not shown) and wiring (not shown) formed on the substrate 4. Incident light incident on the light receiving portion 20a of the semiconductor light receiving element 2A is converted into an electric signal (photocurrent) and output to the outside via a pair of electrodes 3a and 3b.
  • the size of the first condenser lens 6 and the diameter F of the light receiving portion 20a of the light receiving device 1A are the same as those of the light receiving device 1.
  • the thickness E of the semiconductor light receiving element 2A (second semiconductor substrate 20) is set to 0.19 mm, and the flat surface of the first condenser lens 6 facing the accommodating portion 7 and the semiconductor
  • a distance D between the light receiving elements 2A is set to 0.6 mm.
  • a radius of curvature CR2 and a diameter G of the second condenser lens 20b are set to, for example, 0.15 mm and 0.2 mm, respectively. Since the condensing action of the second condenser lens 20b is also used, the thickness of the lens holder 5 having the first condenser lens 6 can be reduced, and the light receiving device 1A can be made smaller than the light receiving device 1.
  • a method for forming the lens holder 5 will be described.
  • a photoresist film 31 is formed on the first surface 10a of the first semiconductor substrate 10, for example, in a circular shape in plan view.
  • the photoresist film 31 is melted by heating to, for example, about 150° C., and the surface tension of the photoresist film 31 is used to transform it into a plano-convex lens shape as shown in FIG. 5 to form a resist mask 31A. do.
  • the resist mask 31A is formed on the first surface 10a side of the first semiconductor substrate 10 by supplying an etching gas as indicated by a plurality of arrows by a reactive ion etching (RIE) method. Etch until it disappears.
  • RIE reactive ion etching
  • the housing portion etching step the first surface 10a side on which the convex spherical surface of the first condenser lens 6 is formed is covered with the protective film 32, and the housing portion 7 is formed on the second surface 10b side.
  • An etching mask 33 for formation is formed, and anisotropic etching is performed from the second surface 10b side.
  • the formation direction of the etching mask 33 is appropriately selected, and etching is performed using an alkaline etchant such as potassium hydroxide (KOH).
  • the (111) plane of the first semiconductor substrate 10 which is perpendicular to the (110) plane of the first semiconductor substrate 10 and has a slow etching rate, is exposed. Then, the etching progresses to form a groove-like accommodation portion 7 .
  • the lens holder 5 having the first condenser lens 6 and the housing portion 7 is obtained as shown in FIG. 4 to 8, the individual piece-shaped first semiconductor substrate 10 is used for the explanation, but the wafer-shaped first semiconductor substrate 10 is provided with a plurality of first condenser lenses 6 and a plurality of accommodating portions 7, respectively. After being collectively formed, it can be separated into individual pieces. Further, as shown in FIG. 9, for example, a light receiving device 1B is provided with a lens holder 5A having a single eave-like side wall having a side surface 10d facing the housing portion 7A, and the lens holder 5A and, for example, a semiconductor light receiving element 2A. can also be formed.
  • a lens holder 5B can be formed having a portion 7B.
  • the accommodating portion 7B surrounded by the inclined side surfaces 10e to 10h.
  • the semiconductor light receiving element 2A housed in the housing portion 7B is protected from the outside.
  • a light-shielding film 35 for example, a metal film formed by a vapor deposition method, a plating method, or the like
  • the first condenser lens 6 It is possible to prevent stray light from entering the light receiving section 20a without entering.
  • a metal case 40 having an opening 40a corresponding to the first condenser lens 6 may be arranged outside the lens holder 5 of the light receiving device 1A as a light shielding structure. can. Even if the lens holder 5 is formed with the accommodating portion 7 whose side surface is partially uncovered, the metal case 40 can prevent stray light and protect the lens holder 5. - ⁇ Incidentally, the metal case 40 may be disposed outside the lens holder 5B having the accommodation portion 7B surrounded by the inclined side surfaces 10e to 10h. Also, by changing the combination of the lens holders 5, 5A, 5B, the semiconductor light receiving elements 2, 2A, and the metal case 40, a light receiving device other than the above can be constructed.
  • the first condenser lens 6 Since the first condenser lens 6 is separate from the semiconductor light-receiving elements 2 and 2A, by increasing the distance D between the first condenser lens 6 and the semiconductor light-receiving elements 2 and 2A, the semiconductor light in the first condenser lens 6 is increased. It is possible to increase the light-receiving diameter that can be incident on the light-receiving element.
  • the first condenser lens 6 formed on the first semiconductor substrate 10 has a higher refractive index than a general condenser lens made of optical glass or optical plastic, so that the light-condensing function is improved. Therefore, the distance D between the first condenser lens 6 and the semiconductor light receiving elements 2, 2A can be reduced while maintaining the light receiving diameter of the first condenser lens 6, and the light receiving devices 1, 1A, 1B, 1C can be made smaller.
  • the first condenser lens 6 Since the first condenser lens 6 is formed integrally with the first semiconductor substrate 10 together with the accommodating portions 7, 7A, and 7B, it is accommodated in the first condenser lens 6 and the accommodating portions 7, 7A, and 7B. It is easy to align the semiconductor light receiving elements 2 and 2A. In addition, since the first condenser lens 6 is thinly formed by the accommodating portions 7, 7A, and 7B, the amount of incident light transmitted through the first condenser lens 6 can be increased, and the amount of received light can be reduced. contribute to the increase.
  • the semiconductor light receiving element 2A has a light receiving portion 20a on the main surface 20c side of the second semiconductor substrate 20 and a second condenser lens 20b on the rear surface 20d side, and the rear surface 20d side faces the first condenser lens 6 side. It is housed in the housing portions 7, 7A, and 7B in the posture. In the light receiving devices 1A, 1B, and 1C, the incident light condensed by the first condensing lens 6 is further condensed by the second condensing lens 20b of the semiconductor light receiving element 2A and enters the light receiving section 20a.
  • the first semiconductor substrate 10 on which the first condenser lens 6 is formed is a silicon substrate having a high transmittance and a high refractive index with respect to infrared light, the first condenser lens 6 and the semiconductor light receiving elements 2 and 2A are separated. The distance D between them can be reduced, which is advantageous for downsizing the light receiving devices 1, 1A, 1B, and 1C. Also, the first semiconductor substrate 10 can be processed with high accuracy by etching to form the first condenser lens 6 and the housing portions 7, 7A, and 7B.
  • the light shielding structure (the light shielding film 35 or the metal case 40) allows only the light that has passed through the first condenser lens 6 to enter the semiconductor light receiving elements 2 and 2A. False detection can be prevented.
  • the portions of the substrate 4 where the semiconductor light receiving elements 2 and 2A are arranged are changed to the It may protrude toward the first condenser lens 6 side, or may be recessed toward the side opposite to the first condenser lens 6 .
  • those skilled in the art can implement various modifications to the above embodiment without departing from the scope of the present invention, and the present invention includes such modifications.
  • 1, 1A, 1B, 1C light receiving devices 2, 2A: semiconductor light receiving elements 3a, 3b: electrodes 4: substrates 5, 5A, 5B: lens holder 6: first condenser lenses 7, 7A, 7B: housing portion 8a, 8b: metal wire 10: first semiconductor substrate 10a: first surface 10b: second surfaces 10c, 10d: side surfaces 10e to 10h: inclined side surface 20: second semiconductor substrate 20a: light receiving portion 20b: second condenser lens 20c: Main surface 20d: Back surface 31: Photoresist film 31A: Resist mask 32: Protective film 33: Etching mask 35: Light shielding film 40: Metal case 40a: Opening P: Optical axis

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

[Problème] Fournir un dispositif de réception de lumière avec lequel il est possible d'obtenir à la fois une augmentation de la quantité de lumière reçue et une réduction de taille simultanément. [Solution] Dispositif de réception de lumière (1) comprenant une première lentille de condensation (6) et un élément de réception de lumière à semi-conducteur (2), et conçu de telle sorte que la lumière incidente condensée par la première lentille de condensation (6) est incidente sur l'élément de réception de lumière à semi-conducteur (2), la première lentille de condensation (6) étant formée au niveau d'une première surface (10a) d'un premier substrat semi-conducteur (10) à travers laquelle la lumière incidente est transmise ; une partie de réception (7) obtenue par formation d'un évidement dans le premier substrat semi-conducteur (10), entre une seconde surface (10b) du premier substrat semi-conducteur (10) opposée à la première surface (10a) et la première surface (10a), est formée de manière à correspondre à la première lentille de condensation (6) du premier substrat semi-conducteur (10) ; et l'élément de réception de lumière à semi-conducteur (2) est formé dans un second substrat semi-conducteur (20) et est logé dans la partie de réception (7).
PCT/JP2021/022358 2021-06-11 2021-06-11 Dispositif de réception de lumière WO2022259535A1 (fr)

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Application Number Priority Date Filing Date Title
PCT/JP2021/022358 WO2022259535A1 (fr) 2021-06-11 2021-06-11 Dispositif de réception de lumière
JP2021551569A JP7044430B1 (ja) 2021-06-11 2021-06-11 受光装置

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Application Number Priority Date Filing Date Title
PCT/JP2021/022358 WO2022259535A1 (fr) 2021-06-11 2021-06-11 Dispositif de réception de lumière

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227676A (ja) * 2006-02-23 2007-09-06 Matsushita Electric Works Ltd 赤外線デバイス集積装置
CN104157719A (zh) * 2014-07-08 2014-11-19 浙江大立科技股份有限公司 晶圆级封装红外探测器及其制备方法
JP2017032731A (ja) * 2015-07-31 2017-02-09 住友電気工業株式会社 波長多重光受信モジュール
DE102015217290A1 (de) * 2015-09-10 2017-03-16 Robert Bosch Gmbh Mikroelektronische Anordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Anordnung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227676A (ja) * 2006-02-23 2007-09-06 Matsushita Electric Works Ltd 赤外線デバイス集積装置
CN104157719A (zh) * 2014-07-08 2014-11-19 浙江大立科技股份有限公司 晶圆级封装红外探测器及其制备方法
JP2017032731A (ja) * 2015-07-31 2017-02-09 住友電気工業株式会社 波長多重光受信モジュール
DE102015217290A1 (de) * 2015-09-10 2017-03-16 Robert Bosch Gmbh Mikroelektronische Anordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Anordnung

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JPWO2022259535A1 (fr) 2022-12-15

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